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Part Details for MTD2955V by onsemi
Results Overview of MTD2955V by onsemi
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (2 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (7 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
MTD2955V Information
MTD2955V by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for MTD2955V
MTD2955V CAD Models
MTD2955V Part Data Attributes
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MTD2955V
onsemi
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Datasheet
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MTD2955V
onsemi
12A, 60V, 0.23ohm, P-CHANNEL, Si, POWER, MOSFET, CASE 369C-01, DPAK-3
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | ON SEMICONDUCTOR | |
| Package Description | CASE 369C-01, DPAK-3 | |
| Pin Count | 3 | |
| Manufacturer Package Code | CASE 369C-01 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Samacsys Manufacturer | onsemi | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 216 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 12 A | |
| Drain-source On Resistance-Max | 0.23 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e0 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 235 | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 60 W | |
| Pulsed Drain Current-Max (IDM) | 42 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for MTD2955V
This table gives cross-reference parts and alternative options found for MTD2955V. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MTD2955V, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
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| MTD2955V1G | onsemi | Check for Price | 12A, 60V, 0.23ohm, P-CHANNEL, Si, POWER, MOSFET, DPAK-3 | MTD2955V vs MTD2955V1G |
| MTD2955V1 | onsemi | Check for Price | TRANSISTOR 12 A, 60 V, 0.23 ohm, P-CHANNEL, Si, POWER, MOSFET, DPAK-3, FET General Purpose Power | MTD2955V vs MTD2955V1 |
MTD2955V Frequently Asked Questions (FAQ)
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A 2-layer or 4-layer PCB with a solid ground plane and thermal vias under the device is recommended. This helps to dissipate heat efficiently and reduce thermal resistance.
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Ensure proper heat sinking, use a thermal interface material (TIM) between the device and heat sink, and follow the recommended PCB layout guidelines. Also, consider derating the device's power handling at high temperatures.
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The SOA is typically defined by the device's voltage, current, and power ratings. For the MTD2955V, the SOA is limited by the maximum voltage rating (Vds) of 55V, maximum current rating (Id) of 2.5A, and maximum power rating (Pd) of 30W.
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Use proper ESD handling and storage procedures, such as using anti-static bags, wrist straps, and mats. Also, ensure that the PCB design includes ESD protection components, such as TVS diodes or ESD protection arrays.
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A gate drive circuit with a high current capability (e.g., 1A) and a fast rise time (e.g., 10ns) is recommended. The gate drive voltage should be between 10V and 15V, and the gate resistance should be minimized to reduce switching losses.