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Part Details for MTD20N03HDL by onsemi
Results Overview of MTD20N03HDL by onsemi
- Distributor Offerings: (6 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (8 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
MTD20N03HDL Information
MTD20N03HDL by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for MTD20N03HDL
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 194 |
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Quest Components | 20A, 30V, 0.04OHM, N-CHANNEL, SI, POWER, MOSFET | 156 |
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$2.3125 / $3.7500 | Buy Now |
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Quest Components | 20A, 30V, 0.04OHM, N-CHANNEL, SI, POWER, MOSFET | 148 |
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$2.3125 / $3.7500 | Buy Now |
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Quest Components | 20A, 30V, 0.04OHM, N-CHANNEL, SI, POWER, MOSFET | 58 |
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$3.0000 / $4.5000 | Buy Now |
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ComSIT USA | 20 AMPS, 30 VOLTS, LOGIC LEVEL N-CHANNEL DPAK POWER MOSFET Power Field-Effect Transistor, 20A I(D), 30V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET ECCN: EAR99 RoHS: Compliant |
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Chip 1 Exchange | INSTOCK | 125 |
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RFQ |
Part Details for MTD20N03HDL
MTD20N03HDL CAD Models
MTD20N03HDL Part Data Attributes
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MTD20N03HDL
onsemi
Buy Now
Datasheet
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Compare Parts:
MTD20N03HDL
onsemi
20A, 30V, 0.04ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 369C-01, DPAK-3
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | ONSEMI | |
| Package Description | DPAK-3 | |
| Pin Count | 3 | |
| Manufacturer Package Code | CASE 369C-01 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | onsemi | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 200 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 20 A | |
| Drain-source On Resistance-Max | 0.04 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e0 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 235 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 74 W | |
| Pulsed Drain Current-Max (IDM) | 60 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for MTD20N03HDL
This table gives cross-reference parts and alternative options found for MTD20N03HDL. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MTD20N03HDL, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| MTD20N03HDLT4 | onsemi | Check for Price | 20A, 30V, 0.04ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 369C-01, DPAK-3 | MTD20N03HDL vs MTD20N03HDLT4 |
| MTD20N03HDLT4G | onsemi | Check for Price | 20A, 30V, 0.04ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, CASE 369C-01, DPAK-3 | MTD20N03HDL vs MTD20N03HDLT4G |
| MTD20N03HDLG | onsemi | Check for Price | 20A, 30V, 0.04ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, CASE 369C-01, DPAK-3 | MTD20N03HDL vs MTD20N03HDLG |
| IRFU3303PBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 20A I(D), 30V, 0.031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, LEAD FREE, PLASTIC, IPAK-3 | MTD20N03HDL vs IRFU3303PBF |
| NTD20N03L27-1G | onsemi | Check for Price | 20A, 30V, 0.031ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, CASE 369D-01, DPAK-3 | MTD20N03HDL vs NTD20N03L27-1G |
| NTD20N03L271 | onsemi | Check for Price | TRANSISTOR 20 A, 30 V, 0.031 ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 369D-01, DPAK-3, FET General Purpose Power | MTD20N03HDL vs NTD20N03L271 |
| MTD20N03HDL | Motorola Mobility LLC | Check for Price | 20A, 30V, 0.04ohm, N-CHANNEL, Si, POWER, MOSFET, DPAK-3 | MTD20N03HDL vs MTD20N03HDL |
| MTD20N03HDL1 | onsemi | Check for Price | 20A, 30V, 0.04ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 369D-01, DPAK-3 | MTD20N03HDL vs MTD20N03HDL1 |
MTD20N03HDL Frequently Asked Questions (FAQ)
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The maximum junction temperature (Tj) that the MTD20N03HDL can withstand is 150°C, as specified in the datasheet. However, it's recommended to keep the junction temperature below 125°C for reliable operation and to prevent thermal runaway.
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To calculate the power dissipation of the MTD20N03HDL, you need to consider the voltage drop across the device (Vds) and the current flowing through it (Ids). The power dissipation (Pd) can be calculated using the formula: Pd = Vds x Ids. You can find the maximum power dissipation rating in the datasheet, which is 30W for the MTD20N03HDL.
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To minimize thermal resistance, it's recommended to use a PCB layout that provides a good thermal path from the device to the heat sink or ambient air. This can be achieved by using a copper pour on the top and bottom layers of the PCB, and connecting it to the device's thermal pad using multiple vias. Additionally, keep the thermal pad clear of any obstacles and ensure good airflow around the device.
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Yes, the MTD20N03HDL is suitable for high-frequency switching applications due to its low gate charge (Qg) and low output capacitance (Coss). However, you need to ensure that the device is properly driven and that the PCB layout is optimized for high-frequency operation. Additionally, consider the device's switching losses and ensure that the power dissipation is within the recommended limits.
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To protect the MTD20N03HDL from electrostatic discharge (ESD), it's recommended to follow proper handling and storage procedures. Use an ESD wrist strap or mat when handling the device, and store it in an ESD-safe container. Additionally, consider adding ESD protection components, such as TVS diodes or ESD protection arrays, to the PCB design.