Part Details for MTD20N03HDL by Motorola Semiconductor Products
Results Overview of MTD20N03HDL by Motorola Semiconductor Products
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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MTD20N03HDL Information
MTD20N03HDL by Motorola Semiconductor Products is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for MTD20N03HDL
Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 2630 |
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RFQ | ||
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Quest Components | 20A, 30V, 0.04OHM, N-CHANNEL, SI, POWER, MOSFET | 209 |
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$0.7750 / $1.5500 | Buy Now |
Part Details for MTD20N03HDL
MTD20N03HDL CAD Models
MTD20N03HDL Part Data Attributes
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MTD20N03HDL
Motorola Semiconductor Products
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Datasheet
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MTD20N03HDL
Motorola Semiconductor Products
Power Field-Effect Transistor, 20A I(D), 30V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3
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Rohs Code | No | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | MOTOROLA INC | |
Package Description | DPAK-3 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Additional Feature | AVALANCHE ENERGY RATED | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 20 A | |
Drain-source On Resistance-Max | 0.04 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 74 W | |
Pulsed Drain Current-Max (IDM) | 60 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Tin/Lead (Sn/Pb) | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
MTD20N03HDL Frequently Asked Questions (FAQ)
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The maximum junction temperature that the MTD20N03HDL can withstand is 150°C. However, it's recommended to operate the device within a junction temperature range of -40°C to 125°C for optimal performance and reliability.
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To ensure the MTD20N03HDL is properly biased, make sure to provide a stable gate-source voltage (Vgs) between 2V to 4V, and a drain-source voltage (Vds) within the recommended operating range. Additionally, ensure the device is operated within the specified current limits to prevent overheating and damage.
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For optimal thermal management, it's recommended to use a PCB layout that provides good thermal conductivity, such as using a copper pour on the top and bottom layers. Additionally, consider using thermal vias to dissipate heat from the device. A heat sink or thermal pad can also be used to further improve thermal performance.
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To protect the MTD20N03HDL from ESD, handle the device with anti-static precautions, such as using an anti-static wrist strap or mat. Ensure that the device is stored in an anti-static package, and avoid touching the device's pins or leads. Additionally, consider using ESD protection devices, such as TVS diodes, in the circuit design.
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The MTD20N03HDL is a reliable device with a typical lifespan of 10 to 15 years, depending on operating conditions and environmental factors. However, it's essential to follow proper handling, storage, and operating procedures to ensure the device meets its expected lifespan.