Datasheets
MTD20N03HDL by:

Power Field-Effect Transistor, 20A I(D), 30V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3

Part Details for MTD20N03HDL by Motorola Semiconductor Products

Results Overview of MTD20N03HDL by Motorola Semiconductor Products

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Applications Education and Research Aerospace and Defense Agriculture Technology Robotics and Drones

MTD20N03HDL Information

MTD20N03HDL by Motorola Semiconductor Products is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for MTD20N03HDL

Part # Distributor Description Stock Price Buy
Bristol Electronics   2630
RFQ
Quest Components 20A, 30V, 0.04OHM, N-CHANNEL, SI, POWER, MOSFET 209
  • 1 $1.5500
  • 17 $0.9300
  • 66 $0.7750
$0.7750 / $1.5500 Buy Now

Part Details for MTD20N03HDL

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MTD20N03HDL Part Data Attributes

MTD20N03HDL Motorola Semiconductor Products
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MTD20N03HDL Motorola Semiconductor Products Power Field-Effect Transistor, 20A I(D), 30V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3
Rohs Code No
Part Life Cycle Code Transferred
Ihs Manufacturer MOTOROLA INC
Package Description DPAK-3
Reach Compliance Code unknown
ECCN Code EAR99
Additional Feature AVALANCHE ENERGY RATED
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 20 A
Drain-source On Resistance-Max 0.04 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G2
JESD-609 Code e0
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 74 W
Pulsed Drain Current-Max (IDM) 60 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

MTD20N03HDL Related Parts

MTD20N03HDL Frequently Asked Questions (FAQ)

  • The maximum junction temperature that the MTD20N03HDL can withstand is 150°C. However, it's recommended to operate the device within a junction temperature range of -40°C to 125°C for optimal performance and reliability.

  • To ensure the MTD20N03HDL is properly biased, make sure to provide a stable gate-source voltage (Vgs) between 2V to 4V, and a drain-source voltage (Vds) within the recommended operating range. Additionally, ensure the device is operated within the specified current limits to prevent overheating and damage.

  • For optimal thermal management, it's recommended to use a PCB layout that provides good thermal conductivity, such as using a copper pour on the top and bottom layers. Additionally, consider using thermal vias to dissipate heat from the device. A heat sink or thermal pad can also be used to further improve thermal performance.

  • To protect the MTD20N03HDL from ESD, handle the device with anti-static precautions, such as using an anti-static wrist strap or mat. Ensure that the device is stored in an anti-static package, and avoid touching the device's pins or leads. Additionally, consider using ESD protection devices, such as TVS diodes, in the circuit design.

  • The MTD20N03HDL is a reliable device with a typical lifespan of 10 to 15 years, depending on operating conditions and environmental factors. However, it's essential to follow proper handling, storage, and operating procedures to ensure the device meets its expected lifespan.

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