Part Details for MT48LC8M16A2P-7E:G by Micron Technology Inc
Results Overview of MT48LC8M16A2P-7E:G by Micron Technology Inc
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
MT48LC8M16A2P-7E:G Information
MT48LC8M16A2P-7E:G by Micron Technology Inc is a DRAM.
DRAMs are under the broader part category of Memory Components.
Memory components are essential in electronics for computer processing. They can be volatile or non-volatile, depending on the desired function. Read more about Memory Components on our Memory part category page.
Price & Stock for MT48LC8M16A2P-7E:G
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 65 |
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RFQ |
Part Details for MT48LC8M16A2P-7E:G
MT48LC8M16A2P-7E:G CAD Models
MT48LC8M16A2P-7E:G Part Data Attributes
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MT48LC8M16A2P-7E:G
Micron Technology Inc
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Datasheet
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MT48LC8M16A2P-7E:G
Micron Technology Inc
Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, LEAD FREE, PLASTIC, TSOP2-54
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | MICRON TECHNOLOGY INC | |
| Part Package Code | TSOP2 | |
| Package Description | 0.400 INCH, LEAD FREE, PLASTIC, TSOP2-54 | |
| Pin Count | 54 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.02 | |
| Samacsys Manufacturer | Micron | |
| Access Mode | FOUR BANK PAGE BURST | |
| Access Time-Max | 5.4 ns | |
| Additional Feature | AUTO/SELF REFRESH | |
| Clock Frequency-Max (fCLK) | 143 MHz | |
| I/O Type | COMMON | |
| Interleaved Burst Length | 1,2,4,8 | |
| JESD-30 Code | R-PDSO-G54 | |
| JESD-609 Code | e3 | |
| Length | 22.22 mm | |
| Memory Density | 134217728 bit | |
| Memory IC Type | SYNCHRONOUS DRAM | |
| Memory Width | 16 | |
| Moisture Sensitivity Level | 3 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 54 | |
| Number of Words | 8388608 words | |
| Number of Words Code | 8000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 70 °C | |
| Operating Temperature-Min | ||
| Organization | 8MX16 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | TSOP2 | |
| Package Equivalence Code | TSOP54,.46,32 | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE, THIN PROFILE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Qualification Status | Not Qualified | |
| Refresh Cycles | 4096 | |
| Seated Height-Max | 1.2 mm | |
| Self Refresh | YES | |
| Sequential Burst Length | 1,2,4,8,FP | |
| Standby Current-Max | 0.002 A | |
| Supply Current-Max | 0.33 mA | |
| Supply Voltage-Max (Vsup) | 3.6 V | |
| Supply Voltage-Min (Vsup) | 3 V | |
| Supply Voltage-Nom (Vsup) | 3.3 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | COMMERCIAL | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Pitch | 0.8 mm | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Width | 10.16 mm |
Alternate Parts for MT48LC8M16A2P-7E:G
This table gives cross-reference parts and alternative options found for MT48LC8M16A2P-7E:G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MT48LC8M16A2P-7E:G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| V54C3128164VCLI8E | ProMOS Technologies Inc | Check for Price | Synchronous DRAM, 8MX16, CMOS, PDSO54, 0.400 INCH, GREEN, PLASTIC, TSOP2-54 | MT48LC8M16A2P-7E:G vs V54C3128164VCLI8E |
| K4S281632F-TL600 | Samsung Semiconductor | Check for Price | Synchronous DRAM, 8MX16, 5ns, CMOS, PDSO54, TSOP2-54 | MT48LC8M16A2P-7E:G vs K4S281632F-TL600 |
| MT48LC8M16A2P-75L:G | Micron Technology Inc | Check for Price | Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, LEAD FREE, PLASTIC, TSOP2-54 | MT48LC8M16A2P-7E:G vs MT48LC8M16A2P-75L:G |
| V55C2128164VAT10 | ProMOS Technologies Inc | Check for Price | Synchronous DRAM, 8MX16, 7ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 | MT48LC8M16A2P-7E:G vs V55C2128164VAT10 |
| HY57V281620FLTP-5 | SK Hynix Inc | Check for Price | Synchronous DRAM, 8MX16, 4.5ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, LEAD FREE, TSOP2-54 | MT48LC8M16A2P-7E:G vs HY57V281620FLTP-5 |
| HY57V281620AT-SI | SK Hynix Inc | Check for Price | Synchronous DRAM, 8MX16, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 | MT48LC8M16A2P-7E:G vs HY57V281620AT-SI |
| K4S281632F-TC60 | Samsung Semiconductor | Check for Price | Synchronous DRAM, 8MX16, 5ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 | MT48LC8M16A2P-7E:G vs K4S281632F-TC60 |
| MT48V8M16P-75M | Micron Technology Inc | Check for Price | Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, LEAD FREE, PLASTIC, TSOP2-54 | MT48LC8M16A2P-7E:G vs MT48V8M16P-75M |
| V54C3128404VCUI7HPC | ProMOS Technologies Inc | Check for Price | Synchronous DRAM, 32MX4, 5.4ns, CMOS, PDSO54, 0.400 INCH, GREEN, PLASTIC, TSOP2-54 | MT48LC8M16A2P-7E:G vs V54C3128404VCUI7HPC |
| K4S281632O-LC750 | Samsung Electro-Mechanics | Check for Price | Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, HALOGEN FREE AND ROHS COMPLIANT, TSOP2-54 | MT48LC8M16A2P-7E:G vs K4S281632O-LC750 |
MT48LC8M16A2P-7E:G Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the MT48LC8M16A2P-7E:G is 0°C to 85°C.
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To enter self-refresh mode, the SDRAM module requires a specific sequence of commands, including a NOP or DES command, followed by a mode register set (MRS) command to set the self-refresh mode bit. The device will then enter self-refresh mode, reducing power consumption.
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The MT48LC8M16A2P-7E:G SDRAM module supports a maximum clock frequency of 133 MHz.
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After power-up, the SDRAM module requires a specific initialization sequence, including a power-on reset, a delay, and a series of commands to set the mode register, including the clock frequency and latency settings.
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The MT48LC8M16A2P-7E:G SDRAM module has a latency of CL=3, which means that the device takes 3 clock cycles to respond to a read or write command.