Part Details for MT48LC4M16A2TG-8EIT by Micron Technology Inc
Results Overview of MT48LC4M16A2TG-8EIT by Micron Technology Inc
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Computing and Data Storage
MT48LC4M16A2TG-8EIT Information
MT48LC4M16A2TG-8EIT by Micron Technology Inc is a DRAM.
DRAMs are under the broader part category of Memory Components.
Memory components are essential in electronics for computer processing. They can be volatile or non-volatile, depending on the desired function. Read more about Memory Components on our Memory part category page.
Part Details for MT48LC4M16A2TG-8EIT
MT48LC4M16A2TG-8EIT CAD Models
MT48LC4M16A2TG-8EIT Part Data Attributes
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MT48LC4M16A2TG-8EIT
Micron Technology Inc
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Datasheet
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MT48LC4M16A2TG-8EIT
Micron Technology Inc
Synchronous DRAM, 4MX16, 6ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | MICRON TECHNOLOGY INC | |
| Part Package Code | TSOP2 | |
| Package Description | 0.400 INCH, PLASTIC, TSOP2-54 | |
| Pin Count | 54 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.02 | |
| Access Mode | FOUR BANK PAGE BURST | |
| Access Time-Max | 6 ns | |
| Additional Feature | AUTO/SELF REFRESH | |
| Clock Frequency-Max (fCLK) | 125 MHz | |
| I/O Type | COMMON | |
| Interleaved Burst Length | 1,2,4,8 | |
| JESD-30 Code | R-PDSO-G54 | |
| JESD-609 Code | e0 | |
| Length | 22.22 mm | |
| Memory Density | 67108864 bit | |
| Memory IC Type | SYNCHRONOUS DRAM | |
| Memory Width | 16 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 54 | |
| Number of Words | 4194304 words | |
| Number of Words Code | 4000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 85 °C | |
| Operating Temperature-Min | -40 °C | |
| Organization | 4MX16 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | TSOP2 | |
| Package Equivalence Code | TSOP54,.46,32 | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE, THIN PROFILE | |
| Qualification Status | Not Qualified | |
| Refresh Cycles | 4096 | |
| Seated Height-Max | 1.2 mm | |
| Self Refresh | YES | |
| Sequential Burst Length | 1,2,4,8,16 | |
| Standby Current-Max | 0.002 A | |
| Supply Current-Max | 0.19 mA | |
| Supply Voltage-Max (Vsup) | 3.6 V | |
| Supply Voltage-Min (Vsup) | 3 V | |
| Supply Voltage-Nom (Vsup) | 3.3 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | INDUSTRIAL | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | GULL WING | |
| Terminal Pitch | 0.8 mm | |
| Terminal Position | DUAL | |
| Width | 10.16 mm |
Alternate Parts for MT48LC4M16A2TG-8EIT
This table gives cross-reference parts and alternative options found for MT48LC4M16A2TG-8EIT. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MT48LC4M16A2TG-8EIT, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| K4S641632C-TC1L0 | Samsung Semiconductor | Check for Price | Synchronous DRAM, 4MX16, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 | MT48LC4M16A2TG-8EIT vs K4S641632C-TC1L0 |
| IBM0325164CT3A-68 | IBM | Check for Price | Synchronous DRAM, 4MX16, 6ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 | MT48LC4M16A2TG-8EIT vs IBM0325164CT3A-68 |
| IBMN364164CT3C-360 | IBM | Check for Price | Synchronous DRAM, 4MX16, 6ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 | MT48LC4M16A2TG-8EIT vs IBMN364164CT3C-360 |
| MB81F641642C-102EFN | FUJITSU Semiconductor Limited | Check for Price | Synchronous DRAM, 4MX16, 6ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 | MT48LC4M16A2TG-8EIT vs MB81F641642C-102EFN |
| MB81F641642C-103LFN | FUJITSU Semiconductor Limited | Check for Price | Synchronous DRAM, 4MX16, 6ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 | MT48LC4M16A2TG-8EIT vs MB81F641642C-103LFN |
| HYB39S64162AT-8 | Siemens | Check for Price | Synchronous DRAM, 4MX16, 6ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 | MT48LC4M16A2TG-8EIT vs HYB39S64162AT-8 |
| GM72V661641CLT-7K | SK Hynix Inc | Check for Price | Synchronous DRAM, 4MX16, 6ns, CMOS, PDSO54, 0.400 INCH, TSOP2-54 | MT48LC4M16A2TG-8EIT vs GM72V661641CLT-7K |
| MD56V62160E-7TA | LAPIS Semiconductor Co Ltd | Check for Price | Synchronous DRAM, 4MX16, 6ns, CMOS, PDSO54, 0.400 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-54 | MT48LC4M16A2TG-8EIT vs MD56V62160E-7TA |
| HM5264165FTT-A60 | Elpida Memory Inc | Check for Price | Synchronous DRAM, 4MX16, 6ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 | MT48LC4M16A2TG-8EIT vs HM5264165FTT-A60 |
| K4S641632E-TL1L0 | Samsung Semiconductor | Check for Price | Synchronous DRAM, 4MX16, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 | MT48LC4M16A2TG-8EIT vs K4S641632E-TL1L0 |