Part Details for MT18HTF6472AY-53EB2 by Micron Technology Inc
Results Overview of MT18HTF6472AY-53EB2 by Micron Technology Inc
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Computing and Data Storage
MT18HTF6472AY-53EB2 Information
MT18HTF6472AY-53EB2 by Micron Technology Inc is a DRAM.
DRAMs are under the broader part category of Memory Components.
Memory components are essential in electronics for computer processing. They can be volatile or non-volatile, depending on the desired function. Read more about Memory Components on our Memory part category page.
Part Details for MT18HTF6472AY-53EB2
MT18HTF6472AY-53EB2 CAD Models
MT18HTF6472AY-53EB2 Part Data Attributes
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MT18HTF6472AY-53EB2
Micron Technology Inc
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Datasheet
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MT18HTF6472AY-53EB2
Micron Technology Inc
DDR DRAM Module, 64MX72, CMOS, PDMA240
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | MICRON TECHNOLOGY INC | |
| Package Description | DIMM, DIMM240,40 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.36 | |
| Clock Frequency-Max (fCLK) | 267 MHz | |
| I/O Type | COMMON | |
| JESD-30 Code | R-PDMA-N240 | |
| JESD-609 Code | e3 | |
| Memory Density | 4831838208 bit | |
| Memory IC Type | DDR DRAM MODULE | |
| Memory Width | 72 | |
| Moisture Sensitivity Level | 1 | |
| Number of Terminals | 240 | |
| Number of Words | 67108864 words | |
| Number of Words Code | 64000000 | |
| Operating Temperature-Max | 55 °C | |
| Operating Temperature-Min | ||
| Organization | 64MX72 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | DIMM | |
| Package Equivalence Code | DIMM240,40 | |
| Package Shape | RECTANGULAR | |
| Package Style | MICROELECTRONIC ASSEMBLY | |
| Qualification Status | Not Qualified | |
| Refresh Cycles | 8192 | |
| Supply Current-Max | 3.06 mA | |
| Supply Voltage-Nom (Vsup) | 1.8 V | |
| Surface Mount | NO | |
| Technology | CMOS | |
| Temperature Grade | COMMERCIAL | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | NO LEAD | |
| Terminal Pitch | 1 mm | |
| Terminal Position | DUAL |
Alternate Parts for MT18HTF6472AY-53EB2
This table gives cross-reference parts and alternative options found for MT18HTF6472AY-53EB2. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MT18HTF6472AY-53EB2, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| HYS72T64000EU-25F-B2 | Qimonda AG | Check for Price | DDR DRAM Module, 64MX72, 0.4ns, CMOS, GREEN, UDIMM-240 | MT18HTF6472AY-53EB2 vs HYS72T64000EU-25F-B2 |
| M395T6553EZ4-CE67 | Samsung Semiconductor | Check for Price | DDR DRAM Module, 64MX72, CMOS, ROHS COMPLIANT, DIMM-240 | MT18HTF6472AY-53EB2 vs M395T6553EZ4-CE67 |
| EBE81AF4ABHA-6E-E | Elpida Memory Inc | Check for Price | DDR DRAM Module, 1GX72, 0.45ns, CMOS, ROHS COMPLIANT, DIMM-240 | MT18HTF6472AY-53EB2 vs EBE81AF4ABHA-6E-E |
| HMP564U7FFP8C-S5 | SK Hynix Inc | Check for Price | DDR DRAM Module, 64MX8, 0.4ns, CMOS, ROHS COMPLIANT, DIMM-240 | MT18HTF6472AY-53EB2 vs HMP564U7FFP8C-S5 |
| HYMP564P72BP8-E3 | SK Hynix Inc | Check for Price | DDR DRAM Module, 64MX72, 0.6ns, CMOS, ROHS COMPLIANT, DIMM-240 | MT18HTF6472AY-53EB2 vs HYMP564P72BP8-E3 |
| M391T6553EZ3-CE6 | Samsung Semiconductor | Check for Price | DDR DRAM Module, 64MX72, 0.45ns, CMOS, ROHS COMPLIANT, DIMM-240 | MT18HTF6472AY-53EB2 vs M391T6553EZ3-CE6 |
| HYS72T64000EP-3.7-B2 | Qimonda AG | Check for Price | DDR DRAM Module, 64MX72, 0.3ns, CMOS, GREEN, RDIMM-240 | MT18HTF6472AY-53EB2 vs HYS72T64000EP-3.7-B2 |
| M391T6553BG0-CE6 | Samsung Semiconductor | Check for Price | DDR DRAM Module, 64MX72, 0.45ns, CMOS, DIMM-240 | MT18HTF6472AY-53EB2 vs M391T6553BG0-CE6 |
| M395T6553EZ4-CE620 | Samsung Semiconductor | Check for Price | DDR DRAM Module, 64MX72, CMOS, ROHS COMPLIANT, DIMM-240 | MT18HTF6472AY-53EB2 vs M395T6553EZ4-CE620 |
| WV3HG232M72EER665D6MG | Microsemi Corporation | Check for Price | DDR DRAM Module, 64MX72, 0.45ns, CMOS, ROHS COMPLIANT, DIMM-240 | MT18HTF6472AY-53EB2 vs WV3HG232M72EER665D6MG |