Part Details for MSMBJ33AE3/TR by Microchip Technology Inc
Results Overview of MSMBJ33AE3/TR by Microchip Technology Inc
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (9 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
MSMBJ33AE3/TR Information
MSMBJ33AE3/TR by Microchip Technology Inc is a Transient Suppressor.
Transient Suppressors are under the broader part category of Diodes.
A diode is a electrical part that can control the direction in which the current flows in a device. Consider factors like voltage drop, current capacity, reverse voltage, and operating frequency when selecting a diode. Read more about Diodes on our Diodes part category page.
Price & Stock for MSMBJ33AE3/TR
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
MSMBJ33AE3/TRMS-ND
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DigiKey | TVS DIODE 33VWM 53.3VC DO214AA Min Qty: 800 Lead time: 40 Weeks Container: Tape & Reel (TR) | Temporarily Out of Stock |
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$1.1400 | Buy Now |
DISTI #
494-MSMBJ33AE3/TR
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Mouser Electronics | ESD Protection Diodes / TVS Diodes TVS 33V 5% 600W uni RoHS: Compliant | 0 |
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$1.1400 | Order Now |
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Onlinecomponents.com | RoHS: Compliant | 0 |
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$1.2100 / $1.7600 | Buy Now |
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Master Electronics | RoHS: Compliant | 0 |
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$1.2100 / $1.7600 | Buy Now |
Part Details for MSMBJ33AE3/TR
MSMBJ33AE3/TR CAD Models
MSMBJ33AE3/TR Part Data Attributes
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MSMBJ33AE3/TR
Microchip Technology Inc
Buy Now
Datasheet
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Compare Parts:
MSMBJ33AE3/TR
Microchip Technology Inc
Trans Voltage Suppressor Diode, 600W, 33V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AA
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | MICROCHIP TECHNOLOGY INC | |
Package Description | ROHS COMPLIANT, PLASTIC, SMBJ, 2 PIN | |
Reach Compliance Code | not_compliant | |
Factory Lead Time | 40 Weeks | |
Additional Feature | HIGH RELIABILITY | |
Breakdown Voltage-Max | 40.6 V | |
Breakdown Voltage-Min | 36.7 V | |
Breakdown Voltage-Nom | 38.65 V | |
Clamping Voltage-Max | 53.3 V | |
Configuration | SINGLE | |
Diode Element Material | SILICON | |
Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE | |
JEDEC-95 Code | DO-214AA | |
JESD-30 Code | R-PDSO-C2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Non-rep Peak Rev Power Dis-Max | 600 W | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -65 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity | UNIDIRECTIONAL | |
Power Dissipation-Max | 1.38 W | |
Qualification Status | Not Qualified | |
Rep Pk Reverse Voltage-Max | 33 V | |
Surface Mount | YES | |
Technology | AVALANCHE | |
Terminal Finish | MATTE TIN | |
Terminal Form | C BEND | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 10 |
Alternate Parts for MSMBJ33AE3/TR
This table gives cross-reference parts and alternative options found for MSMBJ33AE3/TR. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MSMBJ33AE3/TR, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
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SMBJ33A-M3/5B | Vishay Intertechnologies | Check for Price | Trans Voltage Suppressor Diode, 600W, 33V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AA, SMB, 2 PIN | MSMBJ33AE3/TR vs SMBJ33A-M3/5B |
SMBJ33 | EIC Semiconductor Inc | Check for Price | Trans Voltage Suppressor Diode, 600W, 33V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AA, SMB, 2 PIN | MSMBJ33AE3/TR vs SMBJ33 |
SMBJ33A-T | Rectron Semiconductor | Check for Price | Trans Voltage Suppressor Diode, 600W, 33V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AA, SMB, 2 PIN | MSMBJ33AE3/TR vs SMBJ33A-T |
SMBJ33 | SPC Multicomp | Check for Price | Trans Voltage Suppressor Diode, 33V V(RWM), Unidirectional | MSMBJ33AE3/TR vs SMBJ33 |
SMBJ33 | Daco Semiconductor Co Ltd | Check for Price | Transient Suppressor | MSMBJ33AE3/TR vs SMBJ33 |
SMBJ33 | LRC Leshan Radio Co Ltd | Check for Price | Trans Voltage Suppressor Diode, 33V V(RWM), Unidirectional, | MSMBJ33AE3/TR vs SMBJ33 |
SMBJ33 | Lite-On Semiconductor Corporation | Check for Price | Trans Voltage Suppressor Diode, 600W, 33V V(RWM), Unidirectional, 1 Element, Silicon, PLASTIC, SMB, 2 PIN | MSMBJ33AE3/TR vs SMBJ33 |
SMBJ33A | WEITRON INTERNATIONAL CO., LTD. | Check for Price | Trans Voltage Suppressor Diode, 33V V(RWM), Unidirectional | MSMBJ33AE3/TR vs SMBJ33A |
SMBJ33 | Kuwait Semiconductor Co Ltd | Check for Price | Trans Voltage Suppressor Diode, 33V V(RWM), Unidirectional | MSMBJ33AE3/TR vs SMBJ33 |
MSMBJ33AE3/TR Frequently Asked Questions (FAQ)
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The recommended operating temperature range for the MSMBJ33AE3/TR is -40°C to 150°C, as specified in the datasheet. However, it's essential to note that the device's performance and reliability may degrade if operated outside this range.
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To ensure proper biasing, follow the recommended voltage and current ratings specified in the datasheet. Typically, a voltage supply of 3.3V ±10% and a current limit of 100mA is recommended. Additionally, ensure the device is properly decoupled with capacitors to minimize noise and voltage fluctuations.
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The maximum allowable power dissipation for the MSMBJ33AE3/TR is 250mW. Exceeding this limit can cause the device to overheat, leading to reduced performance, reliability issues, or even permanent damage.
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While the MSMBJ33AE3/TR is a high-speed device, its frequency response is limited. It's recommended to operate the device at frequencies below 100MHz to ensure optimal performance and minimize signal degradation. For higher frequency applications, consider using a device specifically designed for high-frequency operation.
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To prevent electrostatic discharge (ESD) damage, handle the MSMBJ33AE3/TR with care. Use an ESD wrist strap or mat, and ensure the device is stored in an anti-static package. When handling the device, avoid touching the pins or exposed metal surfaces, and use a grounded tool or fixture to prevent static buildup.