Part Details for MSMBJ33A by Microsemi Corporation
Results Overview of MSMBJ33A by Microsemi Corporation
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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MSMBJ33A Information
MSMBJ33A by Microsemi Corporation is a Transient Suppressor.
Transient Suppressors are under the broader part category of Diodes.
A diode is a electrical part that can control the direction in which the current flows in a device. Consider factors like voltage drop, current capacity, reverse voltage, and operating frequency when selecting a diode. Read more about Diodes on our Diodes part category page.
Part Details for MSMBJ33A
MSMBJ33A CAD Models
MSMBJ33A Part Data Attributes
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MSMBJ33A
Microsemi Corporation
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Datasheet
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MSMBJ33A
Microsemi Corporation
Trans Voltage Suppressor Diode, 600W, 33V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AA, PLASTIC, SMBJ, 2 PIN
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Pbfree Code | No | |
Rohs Code | No | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | MICROSEMI CORP | |
Part Package Code | DO-214AA | |
Package Description | PLASTIC, SMBJ, 2 PIN | |
Pin Count | 2 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8541.10.00.50 | |
Samacsys Manufacturer | Microsemi Corporation | |
Additional Feature | HIGH RELIABILITY | |
Breakdown Voltage-Max | 40.6 V | |
Breakdown Voltage-Min | 36.7 V | |
Configuration | SINGLE | |
Diode Element Material | SILICON | |
Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE | |
JEDEC-95 Code | DO-214AA | |
JESD-30 Code | R-PDSO-J2 | |
JESD-609 Code | e0 | |
Moisture Sensitivity Level | 1 | |
Non-rep Peak Rev Power Dis-Max | 600 W | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -65 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity | UNIDIRECTIONAL | |
Power Dissipation-Max | 1.38 W | |
Qualification Status | Not Qualified | |
Rep Pk Reverse Voltage-Max | 33 V | |
Surface Mount | YES | |
Technology | AVALANCHE | |
Terminal Finish | TIN LEAD | |
Terminal Form | J BEND | |
Terminal Position | DUAL |
Alternate Parts for MSMBJ33A
This table gives cross-reference parts and alternative options found for MSMBJ33A. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MSMBJ33A, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
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MSMBJ33AE3 | Microsemi Corporation | Check for Price | Trans Voltage Suppressor Diode, 600W, 33V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AA, ROHS COMPLIANT, PLASTIC, SMBJ, 2 PIN | MSMBJ33A vs MSMBJ33AE3 |
MSMBJ33A Frequently Asked Questions (FAQ)
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The recommended operating temperature range for the MSMBJ33A is -55°C to 150°C, although it can withstand storage temperatures from -65°C to 200°C.
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To ensure reliability, follow proper handling and storage procedures, use a clean and dry environment, and avoid exposing the device to mechanical stress, moisture, or radiation. Additionally, consider using a radiation-hardened version of the device if it will be used in a radiation-prone environment.
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The MSMBJ33A can withstand a maximum surge current of 100A for 1ms, although this may vary depending on the specific application and operating conditions.
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Select a voltage rating that is at least 10-20% higher than the maximum expected voltage in your application to ensure safe operation and to account for any voltage spikes or transients.
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The typical response time of the MSMBJ33A to an overvoltage event is less than 1ns, although this may vary depending on the specific application and operating conditions.