Datasheets
MSCSM170TAM23CTPAG by: Microchip Technology Inc

Power Field-Effect Transistor, 122A I(D), 1700V, 0.0225ohm, 6-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET

Part Details for MSCSM170TAM23CTPAG by Microchip Technology Inc

Results Overview of MSCSM170TAM23CTPAG by Microchip Technology Inc

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Applications Industrial Automation Healthcare Renewable Energy Robotics and Drones

MSCSM170TAM23CTPAG Information

MSCSM170TAM23CTPAG by Microchip Technology Inc is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for MSCSM170TAM23CTPAG

Part # Distributor Description Stock Price Buy
DISTI # 62AJ4673
Newark Pm-Mosfet-Sic-Sbd-Sp6P Rohs Compliant: Yes |Microchip MSCSM170TAM23CTPAG RoHS: Compliant Min Qty: 2 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 1 $558.4700
  • 50 $539.8500
  • 100 $521.2400
  • 250 $521.2400
  • 500 $521.2400
$521.2400 / $558.4700 Buy Now
DISTI # 150-MSCSM170TAM23CTPAG-ND
DigiKey MOSFET 6N-CH 1700V 122A Min Qty: 1 Lead time: 20 Weeks Container: Tube 3
In Stock
  • 1 $581.7400
$581.7400 Buy Now
DISTI # MSCSM170TAM23CTPAG
Avnet Americas MOSFET Power Module Triple Phase 1700V 122A - Bulk (Alt: MSCSM170TAM23CTPAG) RoHS: Not Compliant Min Qty: 2 Package Multiple: 1 Lead time: 20 Weeks, 0 Days Container: Bulk 0
  • 2 $607.3367
  • 4 $593.3751
  • 6 $579.4126
  • 10 $565.4456
  • 20 $551.4883
$551.4883 / $607.3367 Buy Now
DISTI # 579-M170TAM23CTPAG
Mouser Electronics MOSFET Modules PM-MOSFET-SIC-SBD-SP6P RoHS: Compliant 0
  • 2 $581.7300
$581.7300 Order Now
DISTI # MSCSM170TAM23CTPAG
Microchip Technology Inc CC6558, Projected EOL: 2044-10-11 COO: Philippines ECCN: EAR99 Lead time: 20 Weeks, 0 Days 0

Alternates Available
  • 1 $558.4700
  • 50 $539.8500
  • 100 $521.2400
  • 250 $502.6200
  • 500 $484.0100
  • 1,000 $465.3900
  • 5,000 $442.1200
$442.1200 / $558.4700 Buy Now
Onlinecomponents.com   RoHS: Compliant 0
  • 1 $612.3500
  • 3 $574.5500
  • 5 $565.9300
$565.9300 / $612.3500 Buy Now
NAC   RoHS: Compliant Min Qty: 1 Package Multiple: 1 0
  • 1 $620.5200
  • 11 $596.6500
  • 20 $581.7400
$581.7400 / $620.5200 Buy Now
DISTI # MSCSM170TAM23CT
Richardson RFPD SILICON CARBIDE MOSFET MODULES RoHS: Compliant Min Qty: 2 0
  • 2 $628.7400
  • 25 $612.5100
$612.5100 / $628.7400 Buy Now
Cytech Systems Limited SIC 6N-CH 1700V 122A 2
RFQ
DISTI # MSCSM170TAM23CTPAG
EBV Elektronik MOSFET Power Module Triple Phase 1700V 122A (Alt: MSCSM170TAM23CTPAG) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 21 Weeks, 0 Days EBV - 0
Buy Now
Master Electronics   RoHS: Compliant 0
  • 1 $612.3500
  • 3 $574.5500
  • 5 $565.9300
$565.9300 / $612.3500 Buy Now

Part Details for MSCSM170TAM23CTPAG

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MSCSM170TAM23CTPAG Part Data Attributes

MSCSM170TAM23CTPAG Microchip Technology Inc
Buy Now Datasheet
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MSCSM170TAM23CTPAG Microchip Technology Inc Power Field-Effect Transistor, 122A I(D), 1700V, 0.0225ohm, 6-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer MICROCHIP TECHNOLOGY INC
Package Description MODULE-23
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 20 Weeks
Case Connection ISOLATED
Configuration 3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
DS Breakdown Voltage-Min 1700 V
Drain Current-Max (ID) 122 A
Drain-source On Resistance-Max 0.0225 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 20 pF
JESD-30 Code R-XUFM-X23
Number of Elements 6
Number of Terminals 23
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Operating Temperature-Min -40 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 240 A
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Transistor Application SWITCHING
Transistor Element Material SILICON CARBIDE

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