Datasheets
MSCSM170HRM233AG by: Microchip Technology Inc

Power Field-Effect Transistor, 124A I(D), 1700V, 0.0225ohm, 4-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET

Part Details for MSCSM170HRM233AG by Microchip Technology Inc

Results Overview of MSCSM170HRM233AG by Microchip Technology Inc

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MSCSM170HRM233AG Information

MSCSM170HRM233AG by Microchip Technology Inc is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for MSCSM170HRM233AG

Part # Distributor Description Stock Price Buy
DISTI # 76AK9700
Newark Pm-Mosfet-Sic-Sp3F Rohs Compliant: Yes |Microchip MSCSM170HRM233AG RoHS: Compliant Min Qty: 4 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 1 $184.4800
  • 50 $178.3300
  • 100 $172.1800
  • 250 $172.1800
  • 500 $172.1800
$172.1800 / $184.4800 Buy Now
DISTI # 150-MSCSM170HRM233AG-ND
DigiKey MOSFET 4N-CH 1700V/1200V 124A Min Qty: 1 Lead time: 20 Weeks Container: Tube 10
In Stock
  • 1 $192.1600
$192.1600 Buy Now
DISTI # MSCSM170HRM233AG
Avnet Americas Silicon Carbide MOSFET, Three Level Inverter, Quad N Channel, 124 A, 1.7 kV, 22.5 Milliohms, Module - Bulk (Alt: MSCSM170HRM233AG) RoHS: Not Compliant Min Qty: 4 Package Multiple: 1 Lead time: 20 Weeks, 0 Days Container: Bulk 0
  • 4 $192.1625
  • 6 $189.0665
  • 10 $186.0012
  • 20 $182.9248
  • 40 $179.8643
$179.8643 / $192.1625 Buy Now
DISTI # 579-MSCSM170HRM233AG
Mouser Electronics MOSFET Modules PM-MOSFET-SIC-SP3F RoHS: Compliant 0
  • 1 $192.1600
$192.1600 Order Now
DISTI # MSCSM170HRM233AG
Microchip Technology Inc CC3286, Projected EOL: 2049-01-19 COO: Philippines ECCN: EAR99 Lead time: 20 Weeks, 0 Days 0

Alternates Available
  • 1 $184.4800
  • 50 $178.3300
  • 100 $172.1800
  • 250 $166.0300
  • 500 $159.8800
  • 1,000 $153.7300
  • 5,000 $146.0400
$146.0400 / $184.4800 Buy Now
Onlinecomponents.com   RoHS: Compliant 0
  • 1 $307.4600
  • 2 $230.5900
  • 3 $215.2200
  • 4 $210.9200
$210.9200 / $307.4600 Buy Now
NAC PM-MOSFET-SIC-SP3F, RoHS: Compliant Min Qty: 1 Package Multiple: 1 0
  • 1 $219.6100
  • 100 $202.2800
  • 500 $192.1600
  • 800 $187.4800
$187.4800 / $219.6100 Buy Now
Master Electronics   RoHS: Compliant 0
  • 1 $307.4600
  • 2 $230.5900
  • 3 $215.2200
  • 4 $210.9200
$210.9200 / $307.4600 Buy Now

Part Details for MSCSM170HRM233AG

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MSCSM170HRM233AG Part Data Attributes

MSCSM170HRM233AG Microchip Technology Inc
Buy Now Datasheet
Compare Parts:
MSCSM170HRM233AG Microchip Technology Inc Power Field-Effect Transistor, 124A I(D), 1700V, 0.0225ohm, 4-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer MICROCHIP TECHNOLOGY INC
Package Description MODULE-22
Reach Compliance Code unknown
Factory Lead Time 20 Weeks
Case Connection ISOLATED
Configuration COMPLEX
DS Breakdown Voltage-Min 1700 V
Drain Current-Max (ID) 124 A
Drain-source On Resistance-Max 0.0225 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 20 pF
JESD-30 Code R-XUFM-X22
Number of Elements 4
Number of Terminals 22
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Operating Temperature-Min -40 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 240 A
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON CARBIDE

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