Part Details for MSCSM170AM15CT3AG by Microchip Technology Inc
Results Overview of MSCSM170AM15CT3AG by Microchip Technology Inc
- Distributor Offerings: (11 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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MSCSM170AM15CT3AG Information
MSCSM170AM15CT3AG by Microchip Technology Inc is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for MSCSM170AM15CT3AG
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
62AJ4669
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Newark | Pm-Mosfet-Sic-Sbd-Sp3F Rohs Compliant: Yes |Microchip MSCSM170AM15CT3AG RoHS: Compliant Min Qty: 2 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$292.8400 / $313.7500 | Buy Now |
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DISTI #
150-MSCSM170AM15CT3AG-ND
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DigiKey | MOSFET 2N-CH 1700V 181A Min Qty: 1 Lead time: 20 Weeks Container: Tube |
16 In Stock |
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$326.8200 | Buy Now |
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DISTI #
MSCSM170AM15CT3AG
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Avnet Americas | MOSFET Power Module Phase Leg 1700V 181A - Bulk (Alt: MSCSM170AM15CT3AG) RoHS: Not Compliant Min Qty: 2 Package Multiple: 1 Lead time: 20 Weeks, 0 Days Container: Bulk | 0 |
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$309.8308 / $341.2069 | Buy Now |
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DISTI #
579-SCSM170AM15CT3AG
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Mouser Electronics | Discrete Semiconductor Modules PM-MOSFET-SIC-SBD-SP3F RoHS: Compliant | 0 |
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$326.8200 | Order Now |
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DISTI #
MSCSM170AM15CT3AG
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Microchip Technology Inc | CC3251, Projected EOL: 2044-10-07 COO: Philippines ECCN: EAR99 Lead time: 20 Weeks, 0 Days |
0 Alternates Available |
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$248.3900 / $313.7500 | Buy Now |
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Onlinecomponents.com | RoHS: Compliant | 0 |
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$322.7900 / $344.0200 | Buy Now |
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NAC | RoHS: Compliant Min Qty: 1 Package Multiple: 1 | 0 |
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$318.8500 / $373.5100 | Buy Now |
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DISTI #
MSCSM170AM15CT3
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Richardson RFPD | SILICON CARBIDE MOSFET MODULES RoHS: Compliant Min Qty: 2 | 0 |
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$344.1200 / $353.2300 | Buy Now |
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DISTI #
MSCSM170AM15CT3AG
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Avnet Silica | MOSFET Power Module Phase Leg 1700V 181A (Alt: MSCSM170AM15CT3AG) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 22 Weeks, 0 Days | Silica - 0 |
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Buy Now | |
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DISTI #
MSCSM170AM15CT3AG
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EBV Elektronik | MOSFET Power Module Phase Leg 1700V 181A (Alt: MSCSM170AM15CT3AG) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 21 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for MSCSM170AM15CT3AG
MSCSM170AM15CT3AG CAD Models
MSCSM170AM15CT3AG Part Data Attributes
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MSCSM170AM15CT3AG
Microchip Technology Inc
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Datasheet
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MSCSM170AM15CT3AG
Microchip Technology Inc
Power Field-Effect Transistor, 181A I(D), 1700V, 0.015ohm, 2-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | MICROCHIP TECHNOLOGY INC | |
| Package Description | MODULE-25 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 20 Weeks | |
| Case Connection | ISOLATED | |
| Configuration | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR | |
| DS Breakdown Voltage-Min | 1700 V | |
| Drain Current-Max (ID) | 181 A | |
| Drain-source On Resistance-Max | 0.015 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 30 pF | |
| JESD-30 Code | R-XUFM-X25 | |
| Number of Elements | 2 | |
| Number of Terminals | 25 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -40 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 360 A | |
| Surface Mount | NO | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON CARBIDE |