Datasheets
MSC40SM120JCU2 by:

Power Field-Effect Transistor, 55A I(D), 1200V, 0.05ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET

Part Details for MSC40SM120JCU2 by Microchip Technology Inc

Results Overview of MSC40SM120JCU2 by Microchip Technology Inc

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Applications Energy and Power Systems Renewable Energy

MSC40SM120JCU2 Information

MSC40SM120JCU2 by Microchip Technology Inc is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for MSC40SM120JCU2

Part # Distributor Description Stock Price Buy
DISTI # 78AH6614
Newark Pm-Mosfet-Sic-Sbd-Sot227 Rohs Compliant: Yes |Microchip MSC40SM120JCU2 RoHS: Compliant Min Qty: 18 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 1 $36.0600
  • 50 $34.8600
  • 100 $33.6600
  • 250 $33.6600
  • 500 $33.6600
$33.6600 / $36.0600 Buy Now
DISTI # 150-MSC40SM120JCU2-ND
DigiKey SICFET N-CH 1.2KV 55A SOT227 Min Qty: 1 Lead time: 20 Weeks Container: Tube 12
In Stock
  • 1 $37.5600
$37.5600 Buy Now
DISTI # MSC40SM120JCU2
Avnet Americas Transistor MOSFET N-Channel 1200V 55A 4-Pin Screw Mount - Bulk (Alt: MSC40SM120JCU2) RoHS: Not Compliant Min Qty: 18 Package Multiple: 1 Lead time: 20 Weeks, 0 Days Container: Bulk 0
  • 18 $39.2154
  • 20 $38.3139
  • 40 $37.4124
  • 90 $36.5105
  • 180 $35.6093
$35.6093 / $39.2154 Buy Now
DISTI # 494-MSC40SM120JCU2
Mouser Electronics Discrete Semiconductor Modules PM-MOSFET-SIC-SBD-SOT227 RoHS: Compliant 121
  • 1 $37.5600
$37.5600 Buy Now
DISTI # MSC40SM120JCU2
Microchip Technology Inc CC0138, Projected EOL: 2044-04-30 COO: Philippines ECCN: EAR99 RoHS: Compliant Lead time: 20 Weeks, 0 Days 0

Alternates Available
  • 1 $36.0600
  • 50 $34.8600
  • 100 $33.6600
  • 250 $32.4500
  • 500 $31.2500
  • 1,000 $30.0500
  • 5,000 $28.5500
$28.5500 / $36.0600 Buy Now
Onlinecomponents.com   RoHS: Compliant 0
  • 5 $54.0900
  • 9 $45.0800
  • 14 $40.5700
  • 18 $39.7600
$39.7600 / $54.0900 Buy Now
DISTI # 63297954
Verical Boost Chopper SiC MOSFET Power Module RoHS: Compliant Min Qty: 8 Package Multiple: 1 Americas - 18
  • 8 $56.3619
  • 10 $54.8383
$54.8383 / $56.3619 Buy Now
DISTI # 69112413
Verical Boost Chopper SiC MOSFET Power Module RoHS: Compliant Min Qty: 2 Package Multiple: 1 Americas - 18
  • 2 $50.1000
$50.1000 Buy Now
DISTI # MSC40SM120JCU2
TME Module, SiC diode/transistor, 1.2kV, 44A, SOT227B, screw, Idm: 110A Min Qty: 1 0
  • 1 $86.4500
  • 3 $77.8100
  • 10 $68.7500
$68.7500 / $86.4500 RFQ
NAC PM-MOSFET-SIC-SBD-SOT227 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Container: Tube 18
  • 1 $42.9300
  • 100 $39.5400
  • 500 $37.5600
  • 800 $36.6500
$36.6500 / $42.9300 Buy Now
DISTI # MSC40SM120JCU2
Richardson RFPD SILICON CARBIDE MOSFET MODULES RoHS: Compliant Min Qty: 18 18
  • 18 $40.6000
  • 25 $39.5500
$39.5500 / $40.6000 Buy Now
DISTI # MSC40SM120JCU2
EBV Elektronik Transistor MOSFET NChannel 1200V 55A 4Pin Screw Mount (Alt: MSC40SM120JCU2) RoHS: Compliant Min Qty: 18 Package Multiple: 1 Lead time: 21 Weeks, 0 Days EBV - 4
Buy Now
Master Electronics   RoHS: Compliant 0
  • 5 $54.0900
  • 9 $45.0800
  • 14 $40.5700
  • 18 $39.7600
$39.7600 / $54.0900 Buy Now

Part Details for MSC40SM120JCU2

MSC40SM120JCU2 CAD Models

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MSC40SM120JCU2 Part Data Attributes

MSC40SM120JCU2 Microchip Technology Inc
Buy Now Datasheet
Compare Parts:
MSC40SM120JCU2 Microchip Technology Inc Power Field-Effect Transistor, 55A I(D), 1200V, 0.05ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer MICROCHIP TECHNOLOGY INC
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.50.00.80
Factory Lead Time 20 Weeks
Case Connection ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 1200 V
Drain Current-Max (ID) 55 A
Drain-source On Resistance-Max 0.05 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-XUFM-X4
Number of Elements 1
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 245 W
Pulsed Drain Current-Max (IDM) 110 A
Surface Mount YES
Terminal Form UNSPECIFIED
Terminal Position UPPER
Transistor Application CHOPPER
Transistor Element Material SILICON CARBIDE

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