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Transistors / RF Power Field-Effect Transistors / MRFE6VP61K25HR5
Datasheets
MRFE6VP61K25HR5 by:

RF POWER, FET

Part Details for MRFE6VP61K25HR5 by NXP Semiconductors

Results Overview of MRFE6VP61K25HR5 by NXP Semiconductors

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Applications Education and Research Industrial Automation Electronic Manufacturing Robotics and Drones

MRFE6VP61K25HR5 Information

MRFE6VP61K25HR5 by NXP Semiconductors is an RF Power Field-Effect Transistor.
RF Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for MRFE6VP61K25HR5

Part # Distributor Description Stock Price Buy
DISTI # 31AC6673
Newark Rf Fet, 133V, 600Mhz, Ni-1230H-4S, Drain Source Voltage Vds:133Vdc, Continuous Drain Current Id:-, Power Dissipation Pd:1.333Kw, Operating Frequency Min:1.8Mhz, Operating Frequency Max:600Mhz, Rf Transistor Case:Ni-1230, No. Of Rohs Compliant: Yes |Nxp MRFE6VP61K25HR5 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape 0
  • 1 $212.8200
  • 10 $202.9900
  • 25 $196.2000
  • 50 $191.2800
$191.2800 / $212.8200 Buy Now
DISTI # 29X4272
Newark Rf Transistor, N Ch, 133V, Ni-1230H-4S, Drain Source Voltage Vds:133Vdc, Continuous Drain Current Id:-, Power Dissipation:1.333Kw, Operating Frequency Min:1.8Mhz, Operating Frequency Max:600Mhz, No. Of Pins:4Pins, Product Range:- Rohs Compliant: Yes |Nxp MRFE6VP61K25HR5 RoHS: Compliant Min Qty: 50 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 1 $188.1500
  • 250 $182.1300
  • 500 $179.1200
$179.1200 / $188.1500 Buy Now
DISTI # MRFE6VP61K25HR5CT-ND
DigiKey RF MOSFET LDMOS 50V NI1230 Min Qty: 1 Lead time: 10 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) 104
In Stock
  • 1 $261.0400
  • 10 $230.2950
  • 50 $209.4134
$209.4134 / $261.0400 Buy Now
DISTI # MRFE6VP61K25HR5
Avnet Americas Transistor RF FET N-CH 133V 1.8MHz to 600MHz 4-Pin NI-1230H-4S T/R - Tape and Reel (Alt: MRFE6VP61K25HR5) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 10 Weeks, 0 Days Container: Reel 0
  • 50 $183.6277
  • 100 $182.1169
  • 200 $180.6091
  • 300 $179.1047
  • 400 $177.6043
$177.6043 / $183.6277 Buy Now
DISTI # MRFE6VP61K25HR5
Avnet Americas Transistor RF FET N-CH 133V 1.8MHz to 600MHz 4-Pin NI-1230H-4S T/R - Tape and Reel (Alt: MRFE6VP61K25HR5) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 10 Weeks, 0 Days Container: Reel 0
  • 50 $182.1287
  • 100 $179.1183
  • 200 $176.1079
  • 300 $173.0975
  • 400 $170.0871
$170.0871 / $182.1287 Buy Now
DISTI # 841-MRFE6VP61K25HR5
Mouser Electronics RF MOSFET Transistors VHV6 1.25KW ISM NI1230H RoHS: Compliant 0
  • 1 $215.8700
  • 10 $202.1800
$202.1800 / $215.8700 Order Now
DISTI # MRFE6VP61K25HR5
IBS Electronics WIDEBAND RF POWER LDMOS TRANSISTOR 1.8-600 MHZ 1250 W CW 50 V ROHS COMPLIANT: YES Min Qty: 50 Package Multiple: 1 0
  • 50 $217.4250
$217.4250 Buy Now
DISTI # MRFE6VP61K25HR5
Richardson RFPD RF POWER TRANSISTOR RoHS: Compliant Min Qty: 50 0
  • 50 $206.9200
$206.9200 Buy Now
DISTI # MRFE6VP61K25HR5
Avnet Silica Transistor RF FET NCH 133V 18MHz to 600MHz 4Pin NI1230H4S TR (Alt: MRFE6VP61K25HR5) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 12 Weeks, 0 Days Silica - 0
Buy Now
DISTI # MRFE6VP61K25HR5
EBV Elektronik Transistor RF FET NCH 133V 18MHz to 600MHz 4Pin NI1230H4S TR (Alt: MRFE6VP61K25HR5) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 12 Weeks, 0 Days EBV - 50
Buy Now

Part Details for MRFE6VP61K25HR5

MRFE6VP61K25HR5 Part Data Attributes

Parametric Data
MRFE6VP61K25HR5 NXP Semiconductors
Buy Now Datasheet
Compare Parts:
MRFE6VP61K25HR5 NXP Semiconductors RF POWER, FET
Rohs Code Yes
Part Life Cycle Code Not Recommended
Ihs Manufacturer NXP SEMICONDUCTORS
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.29.00
Factory Lead Time 10 Weeks
Samacsys Manufacturer NXP
Case Connection SOURCE
Configuration SEPARATE, 2 ELEMENTS
DS Breakdown Voltage-Min 125 V
FET Technology METAL-OXIDE SEMICONDUCTOR
Highest Frequency Band ULTRA HIGH FREQUENCY BAND
Number of Elements 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 225 °C
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 1300 W
Time@Peak Reflow Temperature-Max (s) 40

MRFE6VP61K25HR5 Related Parts

MRFE6VP61K25HR5 Frequently Asked Questions (FAQ)

  • The MRFE6VP61K25HR5 can operate from -40°C to 150°C, but the recommended operating temperature range is -20°C to 120°C for optimal performance.

  • To ensure proper biasing, follow the recommended voltage and current settings outlined in the datasheet. Typically, a voltage supply of 12-28V and a current limit of 1.5A is recommended.

  • For optimal thermal performance, use a multi-layer PCB with a solid ground plane and thermal vias. Ensure good thermal conductivity by using a heat sink and thermal interface material. Follow the recommended PCB layout guidelines in the datasheet.

  • Handle the device with ESD-protective equipment and follow proper ESD handling procedures. Use an ESD-protected workstation and ensure all tools and equipment are grounded.

  • Use a soldering iron with a temperature range of 250-260°C and a solder with a melting point of 217-220°C. Follow the recommended soldering and assembly guidelines in the datasheet.

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