Part Details for MRF6V12500HSR5 by NXP Semiconductors
Results Overview of MRF6V12500HSR5 by NXP Semiconductors
- Distributor Offerings: (8 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (4 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
MRF6V12500HSR5 Information
MRF6V12500HSR5 by NXP Semiconductors is an RF Power Field-Effect Transistor.
RF Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for MRF6V12500HSR5
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
57R6245
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Newark | Pulsed Lateral N-Channel Rf Power Mosfet, 960-1215 Mhz, 500 W, 50 V/ Reel Rohs Compliant: Yes |Nxp MRF6V12500HSR5 RoHS: Compliant Min Qty: 50 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$506.8700 | Buy Now |
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DISTI #
MRF6V12500HSR5-ND
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DigiKey | RF MOSFET LDMOS 50V NI780 Min Qty: 50 Lead time: 10 Weeks Container: Tape & Reel (TR) | Temporarily Out of Stock |
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$526.8070 | Buy Now |
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DISTI #
MRF6V12500HSR5
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Avnet Americas | RF Components - Tape and Reel (Alt: MRF6V12500HSR5) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 10 Weeks, 0 Days Container: Reel | 0 |
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$456.5428 / $472.0263 | Buy Now |
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DISTI #
841-MRF6V12500HSR5
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Mouser Electronics | RF MOSFET Transistors VHV6 500W 50V NI780HS RoHS: Compliant | 0 |
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$526.8000 | Order Now |
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Rochester Electronics | Pulsed Lateral N-Channel RF Power MOSFET, 960-1215 MHz, 500 W, 50 V RoHS: Compliant Status: Active Min Qty: 1 | 46 |
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$407.2800 / $462.8200 | Buy Now |
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DISTI #
MRF6V12500HSR5
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Richardson RFPD | RF POWER TRANSISTOR RoHS: Compliant Min Qty: 50 | 0 |
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$492.7100 | Buy Now |
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DISTI #
MRF6V12500HSR5
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EBV Elektronik | RF Components (Alt: MRF6V12500HSR5) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 12 Weeks, 0 Days | EBV - 0 |
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Buy Now | |
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Flip Electronics | Stock | 300 |
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RFQ |
Part Details for MRF6V12500HSR5
MRF6V12500HSR5 CAD Models
MRF6V12500HSR5 Part Data Attributes
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MRF6V12500HSR5
NXP Semiconductors
Buy Now
Datasheet
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Compare Parts:
MRF6V12500HSR5
NXP Semiconductors
L BAND, Si, N-CHANNEL, RF POWER, MOSFET
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| Rohs Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | NXP SEMICONDUCTORS | |
| Package Description | ROHS COMPLIANT, NI-780S, CASE 465A-06, 2 PIN | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00 | |
| Factory Lead Time | 10 Weeks | |
| Samacsys Manufacturer | NXP | |
| Case Connection | SOURCE | |
| Configuration | SINGLE | |
| DS Breakdown Voltage-Min | 110 V | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Highest Frequency Band | L BAND | |
| JESD-30 Code | R-CDFP-F2 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 225 °C | |
| Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLATPACK | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 40 | |
| Transistor Application | AMPLIFIER | |
| Transistor Element Material | SILICON |
Alternate Parts for MRF6V12500HSR5
This table gives cross-reference parts and alternative options found for MRF6V12500HSR5. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MRF6V12500HSR5, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| MRF6V12500HS | NXP Semiconductors | Check for Price | RF POWER, FET | MRF6V12500HSR5 vs MRF6V12500HS |
| MRF6V12500HSR5 | Freescale Semiconductor | Check for Price | Pulsed Lateral N-Channel RF Power MOSFET, 960-1215 MHz, 500 W, 50 V | MRF6V12500HSR5 vs MRF6V12500HSR5 |
| BLA6H0912-500,112 | Ampleon | Check for Price | RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, CERAMIC PACKAGE-2 | MRF6V12500HSR5 vs BLA6H0912-500,112 |
| BLA6H0912-500 | Ampleon | Check for Price | RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, CERAMIC PACKAGE-2 | MRF6V12500HSR5 vs BLA6H0912-500 |
MRF6V12500HSR5 Frequently Asked Questions (FAQ)
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The MRF6V12500HSR5 is designed to operate up to 1.25 GHz, making it suitable for various wireless communication systems, including Wi-Fi, Bluetooth, and cellular networks.
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To optimize performance, ensure proper impedance matching, use a suitable PCB layout, and follow the recommended application circuit. Additionally, consider using a thermal pad to improve heat dissipation.
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The MRF6V12500HSR5 can handle up to 50 W of continuous wave (CW) power, making it suitable for high-power wireless applications.
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Follow proper handling and storage procedures, ensure proper thermal management, and avoid exceeding the recommended operating conditions to ensure the reliability and longevity of the device.
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Yes, the MRF6V12500HSR5 can be used in a push-pull configuration, which can help improve efficiency and reduce distortion. However, ensure proper impedance matching and biasing to achieve optimal performance.