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Part Details for MRF323 by Advanced Semiconductor Inc
Results Overview of MRF323 by Advanced Semiconductor Inc
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
MRF323 Information
MRF323 by Advanced Semiconductor Inc is an RF Power Bipolar Transistor.
RF Power Bipolar Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for MRF323
MRF323 CAD Models
MRF323 Part Data Attributes
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MRF323
Advanced Semiconductor Inc
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Datasheet
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MRF323
Advanced Semiconductor Inc
RF Power Bipolar Transistor, Ultra High Frequency Band, Silicon, NPN,
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| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ASI SEMICONDUCTOR INC | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Advanced Semiconductor, Inc. | |
| Collector Current-Max (IC) | 2.2 A | |
| Collector-Base Capacitance-Max | 24 pF | |
| Collector-Emitter Voltage-Max | 33 V | |
| Configuration | SINGLE | |
| DC Current Gain-Min (hFE) | 20 | |
| Highest Frequency Band | ULTRA HIGH FREQUENCY BAND | |
| JESD-30 Code | O-XRPM-F4 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | ROUND | |
| Package Style | POST/STUD MOUNT | |
| Polarity/Channel Type | NPN | |
| Power Dissipation-Max (Abs) | 55 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | FLAT | |
| Terminal Position | RADIAL | |
| Transistor Application | AMPLIFIER | |
| Transistor Element Material | SILICON |
Alternate Parts for MRF323
This table gives cross-reference parts and alternative options found for MRF323. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MRF323, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
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| 2N3733 | Microsemi Corporation | Check for Price | RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN, M137, 3 PIN | MRF323 vs 2N3733 |
| BLV13 | NXP Semiconductors | Check for Price | TRANSISTOR VHF BAND, Si, NPN, RF POWER TRANSISTOR, BIP RF Power | MRF323 vs BLV13 |
| SD1135 | STMicroelectronics | Check for Price | UHF BAND, Si, NPN, RF POWER TRANSISTOR, 0.280 INCH, PLASTIC, M122, 4 PIN | MRF323 vs SD1135 |
| SD1012 | Microsemi Corporation | Check for Price | RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, 0.380 INCH, PLASTIC, M135, 4 PIN | MRF323 vs SD1012 |
| 2N6080 | Microsemi Corporation | Check for Price | RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, 0.380 INCH, PLASTIC, M135, 4 PIN | MRF323 vs 2N6080 |
| VHB100-12 | Advanced Semiconductor Inc | Check for Price | RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, 0.500 INCH, FM-6 | MRF323 vs VHB100-12 |
| TVU025 | Advanced Semiconductor Inc | Check for Price | RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN, FM-4 | MRF323 vs TVU025 |
| TPM405 | Motorola Mobility LLC | Check for Price | UHF BAND, Si, NPN, RF POWER TRANSISTOR | MRF323 vs TPM405 |
| 2N6080 | Motorola Mobility LLC | Check for Price | VHF BAND, Si, NPN, RF POWER TRANSISTOR | MRF323 vs 2N6080 |
| PTB20134 | Ericsson | Check for Price | RF Power Bipolar Transistor, Ultra High Frequency Band, Silicon, NPN | MRF323 vs PTB20134 |
MRF323 Frequently Asked Questions (FAQ)
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The recommended PCB layout for the MRF323 involves keeping the input and output traces as short as possible, using a solid ground plane, and placing bypass capacitors close to the device. A 4-layer PCB with a dedicated ground plane is recommended.
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To ensure the MRF323 is biased correctly, make sure to follow the recommended biasing circuit in the datasheet, and use a high-quality voltage regulator to provide a stable voltage supply. Also, ensure that the bias resistors are of high precision and low tolerance.
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The maximum power handling capability of the MRF323 is dependent on the frequency of operation, but as a general rule, it can handle up to 30W of power. However, it's recommended to derate the power handling capability based on the operating frequency and temperature.
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To troubleshoot common issues with the MRF323, start by checking the PCB layout and ensuring that it meets the recommended layout guidelines. Also, check the biasing circuit and ensure that it is correct. Use a spectrum analyzer to check for oscillations and instability, and adjust the circuit accordingly.
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The MRF323 has a high power density, so thermal management is critical. Ensure that the device is mounted on a heat sink with a thermal conductivity of at least 1 W/m-K, and use thermal interface material to improve heat transfer. Also, ensure good airflow around the device to prevent overheating.