Part Details for MP6403 by Toshiba America Electronic Components
Results Overview of MP6403 by Toshiba America Electronic Components
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- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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MP6403 Information
MP6403 by Toshiba America Electronic Components is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for MP6403
MP6403 CAD Models
MP6403 Part Data Attributes
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MP6403
Toshiba America Electronic Components
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Datasheet
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MP6403
Toshiba America Electronic Components
TRANSISTOR 5 A, 60 V, 0.2 ohm, 6 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET, SIP-12, FET General Purpose Power
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Pbfree Code | No | |
Rohs Code | No | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | TOSHIBA CORP | |
Package Description | IN-LINE, R-PSIP-T12 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Configuration | COMPLEX | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 5 A | |
Drain-source On Resistance-Max | 0.2 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PSIP-T12 | |
Number of Elements | 6 | |
Number of Terminals | 12 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | IN-LINE | |
Peak Reflow Temperature (Cel) | 240 | |
Polarity/Channel Type | N-CHANNEL AND P-CHANNEL | |
Power Dissipation Ambient-Max | 36 W | |
Pulsed Drain Current-Max (IDM) | 20 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |