Part Details for MMST2222A by Yangzhou Yangjie Electronics Co Ltd
Results Overview of MMST2222A by Yangzhou Yangjie Electronics Co Ltd
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Audio and Video Systems
MMST2222A Information
MMST2222A by Yangzhou Yangjie Electronics Co Ltd is a Small Signal Bipolar Transistor.
Small Signal Bipolar Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for MMST2222A
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
MMST2222A-YAN
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TME | Transistor: NPN, bipolar, 40V, 0.6A, 0.2W, SOT323 Min Qty: 50 | 0 |
|
$0.0110 / $0.0161 | RFQ |
Part Details for MMST2222A
MMST2222A CAD Models
MMST2222A Part Data Attributes
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MMST2222A
Yangzhou Yangjie Electronics Co Ltd
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Datasheet
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MMST2222A
Yangzhou Yangjie Electronics Co Ltd
Transistor
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | YANGZHOU YANGJIE ELECTRONICS CO LTD | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Collector Current-Max (IC) | 0.6 A | |
| Collector-Emitter Voltage-Max | 40 V | |
| Configuration | SINGLE | |
| DC Current Gain-Min (hFE) | 40 | |
| JESD-30 Code | R-PDSO-G3 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | NPN | |
| Surface Mount | YES | |
| Terminal Finish | TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Transistor Element Material | SILICON | |
| Transition Frequency-Nom (fT) | 300 MHz | |
| Turn-off Time-Max (toff) | 285 ns | |
| Turn-on Time-Max (ton) | 40 ns |