Part Details for MMPQ2907A by Freescale Semiconductor
Results Overview of MMPQ2907A by Freescale Semiconductor
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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MMPQ2907A Information
MMPQ2907A by Freescale Semiconductor is an Other Transistor.
Other Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for MMPQ2907A
MMPQ2907A CAD Models
MMPQ2907A Part Data Attributes
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MMPQ2907A
Freescale Semiconductor
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Datasheet
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MMPQ2907A
Freescale Semiconductor
TRANSISTOR,BJT,ARRAY,INDEPENDENT,PNP,60V V(BR)CEO,600MA I(C),SO
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | MOTOROLA SEMICONDUCTOR PRODUCTS | |
| Package Description | SMALL OUTLINE, R-PDSO-G16 | |
| Reach Compliance Code | unknown | |
| Collector Current-Max (IC) | 0.6 A | |
| Collector-Emitter Voltage-Max | 60 V | |
| Configuration | SEPARATE, 4 ELEMENTS | |
| DC Current Gain-Min (hFE) | 100 | |
| JESD-30 Code | R-PDSO-G16 | |
| JESD-609 Code | e0 | |
| Number of Elements | 4 | |
| Number of Terminals | 16 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | PNP | |
| Power Dissipation Ambient-Max | 2.4 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Element Material | SILICON | |
| Transition Frequency-Nom (fT) | 350 MHz |