Part Details for MMIX1F360N15T2 by IXYS Corporation
Results Overview of MMIX1F360N15T2 by IXYS Corporation
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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MMIX1F360N15T2 Information
MMIX1F360N15T2 by IXYS Corporation is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for MMIX1F360N15T2
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
MMIX1F360N15T2-ND
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DigiKey | MOSFET N-CH 150V 235A 24SMPD Min Qty: 300 Lead time: 25 Weeks Container: Tube | Temporarily Out of Stock |
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$33.3703 | Buy Now |
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DISTI #
747-MMIX1F360N15T2
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Mouser Electronics | MOSFETs SMPD MOSFETs Power Device RoHS: Compliant | 0 |
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$33.3700 | Order Now |
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DISTI #
MMIX1F360N15T2
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TME | Transistor: N-MOSFET, GigaMOS™, unipolar, 150V, 235A, Idm: 900A Min Qty: 1 | 0 |
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$37.3400 / $50.3700 | RFQ |
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New Advantage Corporation | MOSFET DIS.235A 150V N-CH 24SMPD TRENCHT2 RoHS: Compliant Min Qty: 1 Package Multiple: 1 | 16 |
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$87.2500 / $94.5200 | Buy Now |
Part Details for MMIX1F360N15T2
MMIX1F360N15T2 CAD Models
MMIX1F360N15T2 Part Data Attributes
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MMIX1F360N15T2
IXYS Corporation
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Datasheet
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MMIX1F360N15T2
IXYS Corporation
Power Field-Effect Transistor, 235A I(D), 150V, 0.0044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC PACKAGE-21
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| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | IXYS CORP | |
| Package Description | PLASTIC PACKAGE-21 | |
| Pin Count | 21 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 3000 mJ | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 150 V | |
| Drain Current-Max (ID) | 235 A | |
| Drain-source On Resistance-Max | 0.0044 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-G21 | |
| Number of Elements | 1 | |
| Number of Terminals | 21 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 680 W | |
| Pulsed Drain Current-Max (IDM) | 900 A | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
MMIX1F360N15T2 Frequently Asked Questions (FAQ)
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The recommended gate drive voltage for the MMIX1F360N15T2 is between 10V to 15V, with a typical value of 12V. This ensures proper switching and minimizes losses.
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The MMIX1F360N15T2 has a high power density, so proper thermal management is crucial. Use a heat sink with a thermal resistance of less than 1°C/W, and ensure good airflow around the device. You can also consider using a thermal interface material to reduce thermal resistance.
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The maximum allowed dv/dt for the MMIX1F360N15T2 is 5kV/μs. Exceeding this value can lead to premature failure or reduced lifespan. Ensure that your gate drive circuit is designed to limit dv/dt to within this specification.
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Yes, the MMIX1F360N15T2 can be used in a parallel configuration to increase current handling capability. However, it's essential to ensure that the devices are properly matched, and the gate drive circuit is designed to handle the increased current and voltage requirements.
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A good PCB layout for the MMIX1F360N15T2 should minimize parasitic inductance and capacitance. Use a compact layout, keep the gate drive circuit close to the device, and use a solid ground plane to reduce noise and EMI.