Part Details for MMDT2227 by Galaxy Microelectronics
Results Overview of MMDT2227 by Galaxy Microelectronics
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- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Audio and Video Systems
MMDT2227 Information
MMDT2227 by Galaxy Microelectronics is a Small Signal Bipolar Transistor.
Small Signal Bipolar Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for MMDT2227
MMDT2227 CAD Models
MMDT2227 Part Data Attributes
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MMDT2227
Galaxy Microelectronics
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Datasheet
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MMDT2227
Galaxy Microelectronics
General Purpose Dual NPN+PNP Bipolar Transistor; Polarity: NPN+PNP; V(BR)CEO Min (V): 40V; IC (A): 0.6A; HFE Min: 100; HFE Max: 300; VCE (V): 10V; IC (mA): 150mA; VCE(SAT) (V): 1V; IC (mA)1: 500mA; IB (mA): 50mA; FT Min (MHz): 300 MHz; PTM Max (W): 0.2W; Package: SOT-363; package_code: SOT-363; mfr_package_code: SOT-363
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD | |
| Part Package Code | SOT-363 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Collector Current-Max (IC) | 0.6 A | |
| Collector-Emitter Voltage-Max | 40 V | |
| Configuration | SEPARATE, 2 ELEMENTS | |
| DC Current Gain-Min (hFE) | 40 | |
| JESD-30 Code | R-PDSO-G6 | |
| Number of Elements | 2 | |
| Number of Terminals | 6 | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | NPN AND PNP | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Transition Frequency-Nom (fT) | 300 MHz | |
| Turn-on Time-Max (ton) | 35 ns |