Part Details for MMDFS6N303R2 by onsemi
Results Overview of MMDFS6N303R2 by onsemi
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (1 replacement)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Space Technology
Aerospace and Defense
Energy and Power Systems
Renewable Energy
MMDFS6N303R2 Information
MMDFS6N303R2 by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for MMDFS6N303R2
MMDFS6N303R2 CAD Models
MMDFS6N303R2 Part Data Attributes
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MMDFS6N303R2
onsemi
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Datasheet
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MMDFS6N303R2
onsemi
6A, 30V, 0.035ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 751-07, SO-8
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | ON SEMICONDUCTOR | |
| Part Package Code | SOT | |
| Package Description | CASE 751-07, SO-8 | |
| Pin Count | 8 | |
| Manufacturer Package Code | CASE 751-07 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | LOGIC LEVEL COMPATIBLE | |
| Avalanche Energy Rating (Eas) | 325 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 6 A | |
| Drain-source On Resistance-Max | 0.035 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-G8 | |
| JESD-609 Code | e0 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 235 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 2 W | |
| Pulsed Drain Current-Max (IDM) | 30 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for MMDFS6N303R2
This table gives cross-reference parts and alternative options found for MMDFS6N303R2. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MMDFS6N303R2, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
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| MMDFS6N303R2 | Motorola Mobility LLC | Check for Price | 6A, 30V, 0.035ohm, N-CHANNEL, Si, POWER, MOSFET, SO-8 | MMDFS6N303R2 vs MMDFS6N303R2 |
MMDFS6N303R2 Frequently Asked Questions (FAQ)
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A good PCB layout for optimal thermal performance involves placing the device near a thermal pad or a heat sink, using thermal vias to dissipate heat, and keeping the surrounding area clear of other components to allow for good airflow.
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To ensure reliable operation at high temperatures, follow the recommended operating conditions, use a suitable heat sink, and consider derating the device's power handling capabilities according to the temperature derating curve provided in the datasheet.
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Exceeding the maximum junction temperature (Tj) rating can lead to reduced device lifespan, increased thermal resistance, and potentially even device failure. It's essential to ensure the device operates within the recommended temperature range to maintain reliability and performance.
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The gate resistor value depends on the specific application, switching frequency, and gate drive voltage. A general guideline is to use a value between 10 ohms and 100 ohms. However, it's recommended to consult the datasheet and application notes for more detailed guidance.
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The MMDFS6N303R2 has built-in ESD protection, but it's still essential to follow proper handling and assembly procedures to prevent ESD damage. Additionally, consider adding external ESD protection devices or circuits to ensure robust protection in your application.