Part Details for MMDF2P02ER2G by onsemi
Results Overview of MMDF2P02ER2G by onsemi
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Industrial Automation
Energy and Power Systems
Renewable Energy
Automotive
MMDF2P02ER2G Information
MMDF2P02ER2G by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for MMDF2P02ER2G
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
86130309
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Verical | Trans MOSFET P-CH 25V 2.5A 8-Pin SOIC N T/R Min Qty: 399 Package Multiple: 1 Date Code: 1101 | Americas - 4954 |
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$0.9414 | Buy Now |
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Quest Components | 2.5 A, 25 V, 0.25 OHM, 2 CHANNEL, P-CHANNEL, SI, POWER, MOSFET | 432 |
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$0.5369 / $2.0650 | Buy Now |
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Rochester Electronics | Power Field-Effect Transistor, 2.5A, 25V, 0.25ohm, 2-Element, P-Channel, MOSFET RoHS: Compliant Status: Obsolete Min Qty: 1 | 4954 |
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$0.4669 / $0.7531 | Buy Now |
Part Details for MMDF2P02ER2G
MMDF2P02ER2G CAD Models
MMDF2P02ER2G Part Data Attributes
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MMDF2P02ER2G
onsemi
Buy Now
Datasheet
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Compare Parts:
MMDF2P02ER2G
onsemi
Power MOSFET 25V 2.5A 250 mOhm Dual P-Channel SO-8, SOIC-8 Narrow Body, 2500-REEL
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | ONSEMI | |
| Part Package Code | SOIC-8 Narrow Body | |
| Pin Count | 8 | |
| Manufacturer Package Code | 751-07 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Factory Lead Time | 4 Weeks | |
| Samacsys Manufacturer | onsemi | |
| Additional Feature | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | |
| Avalanche Energy Rating (Eas) | 245 mJ | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 25 V | |
| Drain Current-Max (ID) | 2.5 A | |
| Drain-source On Resistance-Max | 0.25 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-G8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 2 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 2 W | |
| Pulsed Drain Current-Max (IDM) | 13 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 40 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for MMDF2P02ER2G
This table gives cross-reference parts and alternative options found for MMDF2P02ER2G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MMDF2P02ER2G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| MMDF2P02ER2 | Motorola Mobility LLC | Check for Price | 2A, 20V, 0.4ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET, SO-8 | MMDF2P02ER2G vs MMDF2P02ER2 |
MMDF2P02ER2G Frequently Asked Questions (FAQ)
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The recommended PCB layout for optimal thermal performance involves using a thermal pad on the bottom of the package, connecting it to a large copper area on the PCB, and using multiple vias to dissipate heat to the other layers. A minimum of 2oz copper thickness is recommended.
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To ensure reliable operation at high temperatures, it's essential to follow the recommended operating conditions, use a suitable thermal design, and consider derating the device's power handling capabilities. Additionally, ensure that the device is soldered correctly, and the PCB is designed to minimize thermal resistance.
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The maximum allowable voltage on the gate pin is ±20V, but it's recommended to keep it within ±15V to ensure reliable operation and prevent damage to the device.
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To protect the device from ESD, handle the device by the body or pins, use an ESD wrist strap or mat, and ensure that the PCB has ESD protection components, such as TVS diodes or resistors, in the circuit.
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The recommended gate resistor value for optimal switching performance is typically between 10Ω to 100Ω, depending on the specific application and switching frequency. A lower value can improve switching speed but may increase power losses.