Part Details for MMDF2C01HDR2 by onsemi
Results Overview of MMDF2C01HDR2 by onsemi
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (5 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
MMDF2C01HDR2 Information
MMDF2C01HDR2 by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for MMDF2C01HDR2
| Part # | Distributor | Description | Stock | Price | Buy | |
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Quest Components | TRANSISTOR,MOSFET,PAIR,COMPLEMENTARY,25V V(BR)DSS,5.2A I(D),SO | 464 |
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$0.9760 / $2.4400 | Buy Now |
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Quest Components | TRANSISTOR,MOSFET,PAIR,COMPLEMENTARY,25V V(BR)DSS,5.2A I(D),SO | 9 |
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$0.7500 / $0.9000 | Buy Now |
Part Details for MMDF2C01HDR2
MMDF2C01HDR2 CAD Models
MMDF2C01HDR2 Part Data Attributes
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MMDF2C01HDR2
onsemi
Buy Now
Datasheet
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Compare Parts:
MMDF2C01HDR2
onsemi
5.2A, 20V, 0.045ohm, 2 CHANNEL,N AND P-CHANNEL, Si, POWER, MOSFET, SO-8
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | ON SEMICONDUCTOR | |
| Part Package Code | SOT | |
| Package Description | SO-8 | |
| Pin Count | 8 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 20 V | |
| Drain Current-Max (ID) | 5.2 A | |
| Drain-source On Resistance-Max | 0.045 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-G8 | |
| JESD-609 Code | e0 | |
| Number of Elements | 2 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 235 | |
| Polarity/Channel Type | N-CHANNEL AND P-CHANNEL | |
| Power Dissipation-Max (Abs) | 2 W | |
| Pulsed Drain Current-Max (IDM) | 48 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for MMDF2C01HDR2
This table gives cross-reference parts and alternative options found for MMDF2C01HDR2. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MMDF2C01HDR2, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRF7307PBF | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 5.2A I(D), 20V, 0.05ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 | MMDF2C01HDR2 vs IRF7307PBF |
| IRF7307QTRPBF | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 5.2A I(D), 20V, 0.05ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, ROHS COMPLIANT, SOP-8 | MMDF2C01HDR2 vs IRF7307QTRPBF |
| IRF7307TR | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 4.3A I(D), 20V, 0.05ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, | MMDF2C01HDR2 vs IRF7307TR |
| MMDF2C01HD | Motorola Mobility LLC | Check for Price | 5.2A, 20V, 0.055ohm, 2 CHANNEL,N AND P-CHANNEL, Si, POWER, MOSFET | MMDF2C01HDR2 vs MMDF2C01HD |
| IRF7307 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 4.3A I(D), 20V, 0.05ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, | MMDF2C01HDR2 vs IRF7307 |
MMDF2C01HDR2 Frequently Asked Questions (FAQ)
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A good PCB layout should ensure minimal thermal resistance, use a solid ground plane, and keep the device away from high-current paths. A thermal pad on the bottom of the device should be connected to a thermal relief pattern on the PCB. A heat sink or thermal interface material can be used to improve heat dissipation.
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The input capacitor should be selected based on the input voltage ripple, output voltage, and output current requirements. A low-ESR capacitor with a capacitance value between 10uF to 22uF is recommended. The capacitor should be placed close to the device's input pins to minimize noise and ensure stable operation.
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The output pins can withstand a maximum voltage stress of 1.5 times the nominal output voltage for a short duration (typically <100ms) during startup or fault conditions. However, it's recommended to ensure that the output voltage remains within the specified range to prevent damage to the device or downstream components.
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OCP and SCP can be implemented using external components such as resistors, capacitors, and a comparator. The device's current sense pin can be used to monitor the output current and trigger an OCP or SCP event when the current exceeds a predetermined threshold. The device can also be used with an external power management IC that provides OCP and SCP features.
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The recommended operating temperature range for the MMDF2C01HDR2 is -40°C to 125°C. The device's performance may degrade at higher temperatures, resulting in reduced output current capability and efficiency. It's essential to ensure proper thermal management and heat dissipation to maintain optimal performance and reliability.