Part Details for MMDF2C01HDR2 by Motorola Semiconductor Products
Results Overview of MMDF2C01HDR2 by Motorola Semiconductor Products
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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MMDF2C01HDR2 Information
MMDF2C01HDR2 by Motorola Semiconductor Products is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for MMDF2C01HDR2
| Part # | Distributor | Description | Stock | Price | Buy | |
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Quest Components | TRANSISTOR,MOSFET,PAIR,COMPLEMENTARY,25V V(BR)DSS,5.2A I(D),SO | 1840 |
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$0.5250 / $1.5000 | Buy Now |
Part Details for MMDF2C01HDR2
MMDF2C01HDR2 CAD Models
MMDF2C01HDR2 Part Data Attributes
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MMDF2C01HDR2
Motorola Semiconductor Products
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Datasheet
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MMDF2C01HDR2
Motorola Semiconductor Products
Power Field-Effect Transistor, 5.2A I(D), 20V, 0.055ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8
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| Rohs Code | No | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | MOTOROLA INC | |
| Package Description | SO-8 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Additional Feature | LOGIC LEVEL COMPATIBLE | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 20 V | |
| Drain Current-Max (ID) | 5.2 A | |
| Drain-source On Resistance-Max | 0.055 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-G8 | |
| JESD-609 Code | e0 | |
| Number of Elements | 2 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL AND P-CHANNEL | |
| Power Dissipation-Max (Abs) | 2 W | |
| Pulsed Drain Current-Max (IDM) | 48 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |