Part Details for MMDF2C01HDR2 by Motorola Mobility LLC
Results Overview of MMDF2C01HDR2 by Motorola Mobility LLC
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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MMDF2C01HDR2 Information
MMDF2C01HDR2 by Motorola Mobility LLC is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for MMDF2C01HDR2
MMDF2C01HDR2 CAD Models
MMDF2C01HDR2 Part Data Attributes
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MMDF2C01HDR2
Motorola Mobility LLC
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Datasheet
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MMDF2C01HDR2
Motorola Mobility LLC
5.2A, 20V, 0.055ohm, 2 CHANNEL,N AND P-CHANNEL, Si, POWER, MOSFET, SO-8
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| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | MOTOROLA INC | |
| Part Package Code | SOT | |
| Package Description | SMALL OUTLINE, R-PDSO-G8 | |
| Pin Count | 8 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Additional Feature | LOGIC LEVEL COMPATIBLE | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 20 V | |
| Drain Current-Max (ID) | 5.2 A | |
| Drain-source On Resistance-Max | 0.055 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-G8 | |
| JESD-609 Code | e0 | |
| Number of Elements | 2 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL AND P-CHANNEL | |
| Power Dissipation-Max (Abs) | 2 W | |
| Pulsed Drain Current-Max (IDM) | 48 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for MMDF2C01HDR2
This table gives cross-reference parts and alternative options found for MMDF2C01HDR2. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MMDF2C01HDR2, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| FDS9934C | onsemi | $0.4910 | Complementary PowerTrench® MOSFET 20V, SOIC-8, 2500-REEL | MMDF2C01HDR2 vs FDS9934C |
| IRF7307 | International Rectifier | Check for Price | Power Field-Effect Transistor, 4.3A I(D), 20V, 0.05ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, | MMDF2C01HDR2 vs IRF7307 |
| FDS9934C_NL | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 6.5A I(D), 20V, 0.03ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 | MMDF2C01HDR2 vs FDS9934C_NL |
| FDS8928A | onsemi | Check for Price | Dual N & P-Channel Enhancement Mode Field Effect Transistor, SOIC-8, 2500-REEL | MMDF2C01HDR2 vs FDS8928A |
| FDS8928A | Rochester Electronics LLC | Check for Price | 5.5A, 30V, 0.03ohm, 2 CHANNEL,N AND P-CHANNEL, Si, POWER, MOSFET, SOIC-8 | MMDF2C01HDR2 vs FDS8928A |
| RF1K4909296 | Harris Semiconductor | Check for Price | Power Field-Effect Transistor, 3.5A I(D), 12V, 0.05ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | MMDF2C01HDR2 vs RF1K4909296 |
| FDS9934C | Rochester Electronics LLC | Check for Price | 6.5A, 20V, 0.03ohm, 2 CHANNEL,N AND P-CHANNEL, Si, POWER, MOSFET, SO-8 | MMDF2C01HDR2 vs FDS9934C |
| RF1K4909296 | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 3.5A I(D), 12V, 0.05ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | MMDF2C01HDR2 vs RF1K4909296 |
| RF1K49092 | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 3.5A I(D), 12V, 0.05ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | MMDF2C01HDR2 vs RF1K49092 |
| RF1K49092 | Intersil Corporation | Check for Price | 3.5A, 12V, 0.05ohm, 2 CHANNEL,N AND P-CHANNEL, Si, POWER, MOSFET, MS-012AA | MMDF2C01HDR2 vs RF1K49092 |