Part Details for MMDF1N05ER2 by onsemi
Results Overview of MMDF1N05ER2 by onsemi
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (2 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Education and Research
Internet of Things (IoT)
Computing and Data Storage
Aerospace and Defense
Healthcare
Telecommunications
Automotive
MMDF1N05ER2 Information
MMDF1N05ER2 by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for MMDF1N05ER2
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
MMDF1N05ER2
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Avnet Americas | - Tape and Reel (Alt: MMDF1N05ER2) RoHS: Not Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 111 Weeks, 0 Days Container: Reel | 0 |
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RFQ | |
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Bristol Electronics | 1098 |
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RFQ | ||
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Cytech Systems Limited | MOSFET 2N-CH 50V 2A 8-SOIC | 625 |
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RFQ |
Part Details for MMDF1N05ER2
MMDF1N05ER2 CAD Models
MMDF1N05ER2 Part Data Attributes
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MMDF1N05ER2
onsemi
Buy Now
Datasheet
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Compare Parts:
MMDF1N05ER2
onsemi
Power MOSFET 50V 2A 300 mOhm Dual N-Channel SO-8, SOIC-8 Narrow Body, 2500-REEL
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| Pbfree Code | No | |
| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | ONSEMI | |
| Part Package Code | SOIC-8 Narrow Body | |
| Package Description | SO-8 | |
| Pin Count | 8 | |
| Manufacturer Package Code | 751-07 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Factory Lead Time | 111 Weeks | |
| Samacsys Manufacturer | onsemi | |
| Additional Feature | LOGIC LEVEL COMPATIBLE | |
| Avalanche Energy Rating (Eas) | 300 mJ | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 50 V | |
| Drain Current-Max (ID) | 2 A | |
| Drain-source On Resistance-Max | 0.3 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-G8 | |
| JESD-609 Code | e0 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 2 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 235 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 2 W | |
| Pulsed Drain Current-Max (IDM) | 10 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for MMDF1N05ER2
This table gives cross-reference parts and alternative options found for MMDF1N05ER2. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MMDF1N05ER2, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| MMDF1N05EG | Motorola Mobility LLC | Check for Price | 2A, 50V, 0.5ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, SOP-8 | MMDF1N05ER2 vs MMDF1N05EG |
| MMDF1N05EG | Motorola Semiconductor Products | Check for Price | Power Field-Effect Transistor, 2A I(D), 50V, 0.5ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SOP-8 | MMDF1N05ER2 vs MMDF1N05EG |
MMDF1N05ER2 Frequently Asked Questions (FAQ)
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For optimal thermal performance, it is recommended to use a thermal pad on the bottom of the device and connect it to a large copper area on the PCB. This helps to dissipate heat efficiently. Additionally, keeping the PCB traces and vias away from the thermal pad can also improve thermal performance.
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To ensure reliable operation at high temperatures, it is essential to follow the recommended operating conditions and derating guidelines provided in the datasheet. Additionally, using a heat sink or a thermal interface material can help to reduce the junction temperature and improve reliability.
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The MMDF1N05ER2 is designed to withstand voltage spikes and transients up to 80V for a duration of 100ns. However, it is recommended to use a TVS diode or a voltage clamp to protect the device from excessive voltage transients.
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Yes, the MMDF1N05ER2 is suitable for high-frequency switching applications up to 1MHz. However, it is essential to consider the device's switching characteristics, such as rise and fall times, and ensure that the application's switching frequency does not exceed the device's maximum rating.
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To calculate the power dissipation, use the formula Pd = (Vin - Vout) x Iout x Efficiency. The junction temperature can be calculated using the formula Tj = Ta + (Pd x Rthja), where Ta is the ambient temperature, Pd is the power dissipation, and Rthja is the thermal resistance from junction to ambient.