Part Details for MMBZ33VALT3G by onsemi
Results Overview of MMBZ33VALT3G by onsemi
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (4 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (7 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Electronic Manufacturing
Renewable Energy
Automotive
MMBZ33VALT3G Information
MMBZ33VALT3G by onsemi is a Transient Suppressor.
Transient Suppressors are under the broader part category of Diodes.
A diode is a electrical part that can control the direction in which the current flows in a device. Consider factors like voltage drop, current capacity, reverse voltage, and operating frequency when selecting a diode. Read more about Diodes on our Diodes part category page.
Price & Stock for MMBZ33VALT3G
| Part # | Distributor | Description | Stock | Price | Buy | |
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Win Source Electronics | 24 and 40 Watt Peak Power Zener Transient Voltage Suppressors | TVS DIODE 26V 46V SOT23-3 | 184000 |
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$0.0554 / $0.0820 | Buy Now |
Part Details for MMBZ33VALT3G
MMBZ33VALT3G CAD Models
MMBZ33VALT3G Part Data Attributes
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MMBZ33VALT3G
onsemi
Buy Now
Datasheet
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Compare Parts:
MMBZ33VALT3G
onsemi
40W, UNIDIRECTIONAL, 2 ELEMENT, SILICON, TVS DIODE, TO-236, LEAD FREE, PLASTIC, CASE 318-08, 3 PIN
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | ONSEMI | |
| Part Package Code | SOT-23 | |
| Package Description | LEAD FREE, PLASTIC, CASE 318-08, 3 PIN | |
| Pin Count | 3 | |
| Manufacturer Package Code | CASE 318-08 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.10.00.50 | |
| Factory Lead Time | 4 Weeks | |
| Breakdown Voltage-Max | 34.65 V | |
| Breakdown Voltage-Min | 31.35 V | |
| Breakdown Voltage-Nom | 33 V | |
| Clamping Voltage-Max | 46 V | |
| Configuration | COMMON ANODE, 2 ELEMENTS | |
| Diode Element Material | SILICON | |
| Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE | |
| JEDEC-95 Code | TO-236 | |
| JESD-30 Code | R-PDSO-G3 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Non-rep Peak Rev Power Dis-Max | 40 W | |
| Number of Elements | 2 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity | UNIDIRECTIONAL | |
| Power Dissipation-Max | 0.225 W | |
| Qualification Status | Not Qualified | |
| Rep Pk Reverse Voltage-Max | 26 V | |
| Surface Mount | YES | |
| Technology | ZENER | |
| Terminal Finish | TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 |
Alternate Parts for MMBZ33VALT3G
This table gives cross-reference parts and alternative options found for MMBZ33VALT3G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MMBZ33VALT3G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| SZMMBZ33VALT1 | onsemi | Check for Price | SZMMBZ33VALT1 | MMBZ33VALT3G vs SZMMBZ33VALT1 |
| SZMMBZ33VALT3 | onsemi | Check for Price | SZMMBZ33VALT3 | MMBZ33VALT3G vs SZMMBZ33VALT3 |
| MMBZ33VALT1 | LRC Leshan Radio Co Ltd | Check for Price | Trans Voltage Suppressor Diode, 40W, 26V V(RWM), Unidirectional, 2 Element, Silicon, TO-236AB, PLASTIC, 318, 3 PIN | MMBZ33VALT3G vs MMBZ33VALT1 |
| MMBZ33VAL | Galaxy Microelectronics | Check for Price | Surface Mount ESD Diode; Direction: Dual,Common Anode; V(BR) Typ (V): 31.35V; PPK Max (W): 40W; Condition: 8×20us; VRWM Max (V): 26V; VC Max (V): 46V; Package: SOT-23 | MMBZ33VALT3G vs MMBZ33VAL |
MMBZ33VALT3G Frequently Asked Questions (FAQ)
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The recommended footprint for MMBZ33VALT3G is a standard SOD-123 package with a pad size of 0.8mm x 0.8mm and a spacing of 0.5mm between pads.
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Yes, MMBZ33VALT3G is rated for operation up to 150°C, but it's recommended to derate the voltage and current ratings according to the temperature derating curve in the datasheet.
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It's recommended to follow standard ESD handling procedures, such as using an ESD wrist strap, ESD mat, and ESD-safe packaging to prevent damage to the device.
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Yes, MMBZ33VALT3G is suitable for high-frequency applications up to 1 GHz, but it's recommended to consider the parasitic inductance and capacitance of the device and the PCB layout when designing the circuit.
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The recommended soldering profile for MMBZ33VALT3G is a peak temperature of 260°C for 10-30 seconds, with a ramp-up rate of 3°C/s and a ramp-down rate of 6°C/s.