Datasheets
MMBT6520LT3G by:

High Voltage PNP Bipolar Transistor, SOT-23 (TO-236) 3 LEAD, 10000-REEL

Part Details for MMBT6520LT3G by onsemi

Results Overview of MMBT6520LT3G by onsemi

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Applications Energy and Power Systems Renewable Energy Automotive

MMBT6520LT3G Information

MMBT6520LT3G by onsemi is a Small Signal Bipolar Transistor.
Small Signal Bipolar Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Part Details for MMBT6520LT3G

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MMBT6520LT3G Part Data Attributes

MMBT6520LT3G onsemi
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MMBT6520LT3G onsemi High Voltage PNP Bipolar Transistor, SOT-23 (TO-236) 3 LEAD, 10000-REEL
Pbfree Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer ONSEMI
Part Package Code SOT-23 (TO-236) 3 LEAD
Package Description HALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, TO-236, 3 PIN
Pin Count 3
Manufacturer Package Code 318
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 4 Weeks
Samacsys Manufacturer onsemi
Collector Current-Max (IC) 0.5 A
Collector-Emitter Voltage-Max 350 V
Configuration SINGLE
DC Current Gain-Min (hFE) 15
JEDEC-95 Code TO-236AB
JESD-30 Code R-PDSO-G3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type PNP
Power Dissipation-Max (Abs) 0.225 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish TIN
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 40 MHz

Alternate Parts for MMBT6520LT3G

This table gives cross-reference parts and alternative options found for MMBT6520LT3G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MMBT6520LT3G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
MMBT6520LT1 LRC Leshan Radio Co Ltd Check for Price Small Signal Bipolar Transistor, 0.5A I(C), PNP MMBT6520LT3G vs MMBT6520LT1
Part Number Manufacturer Composite Price Description Compare
MMBT6520LT1 Motorola Mobility LLC Check for Price 500mA, 350V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB MMBT6520LT3G vs MMBT6520LT1
MMBT6520LT3 Motorola Mobility LLC Check for Price 500mA, 350V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB MMBT6520LT3G vs MMBT6520LT3
MMBT6520LT3G Rochester Electronics LLC Check for Price 500mA, 350V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, HALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, TO-236, 3 PIN MMBT6520LT3G vs MMBT6520LT3G
MMBT6520LT1 onsemi Check for Price High Voltage PNP Bipolar Transistor, SOT-23 (TO-236) 3 LEAD, 3000-REEL MMBT6520LT3G vs MMBT6520LT1
MMBT6520LT3 onsemi Check for Price High Voltage PNP Bipolar Transistor, SOT-23 (TO-236) 3 LEAD, 10000-REEL MMBT6520LT3G vs MMBT6520LT3
MMBT6520LT1G Rochester Electronics LLC Check for Price 500mA, 350V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, HALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, TO-236, 3 PIN MMBT6520LT3G vs MMBT6520LT1G

MMBT6520LT3G Related Parts

MMBT6520LT3G Frequently Asked Questions (FAQ)

  • The recommended PCB footprint for MMBT6520LT3G is a standard SOT-23 package with a minimum pad size of 0.8mm x 0.8mm and a thermal pad size of 2.5mm x 2.5mm.

  • To ensure reliable operation of MMBT6520LT3G in high-temperature environments, it is recommended to follow proper thermal management practices, such as providing adequate heat sinking, using thermal interface materials, and keeping the junction temperature below 150°C.

  • The maximum allowed voltage on the base-emitter junction of MMBT6520LT3G is 6V, as specified in the datasheet. Exceeding this voltage may cause damage to the device.

  • While MMBT6520LT3G can be used as a switch, it is not recommended for high-frequency applications due to its relatively high transition frequency (ft) of 100 MHz. For high-frequency applications, a transistor with a higher ft is recommended.

  • To handle ESD protection when working with MMBT6520LT3G, it is recommended to follow proper ESD handling procedures, such as using an ESD wrist strap, ESD mat, and ESD-safe tools. Additionally, the device should be stored in an ESD-safe environment.

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