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High Voltage NPN Bipolar Transistor, SOT-23 (TO-236) 3 LEAD, 10000-REEL
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
MMBT5551LT3G by onsemi is a Small Signal Bipolar Transistor.
Small Signal Bipolar Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
42K1343
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Newark | Bipolar Transistor, Npn, 160V, Full Reel, Transistor Polarity:Npn, Collector Emitter Voltage Max:160V, Continuous Collector Current:600Ma, Power Dissipation:225Mw, Transistor Mounting:Surface Mount, No. Of Pins:3Pins, Product Range:-Rohs Compliant: Yes |Onsemi MMBT5551LT3G RoHS: Compliant Min Qty: 20000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
|
$0.0180 / $0.0220 | Buy Now |
DISTI #
MMBT5551LT3GOSCT-ND
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DigiKey | TRANS NPN 160V 0.6A SOT23-3 Min Qty: 1 Lead time: 10 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
16845 In Stock |
|
$0.0150 / $0.1500 | Buy Now |
DISTI #
MMBT5551LT3G
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Avnet Americas | Transistor, NPN, 160 V, 0.6 A, 150 DEG C, 0.225 W, SOT-23 - Tape and Reel (Alt: MMBT5551LT3G) RoHS: Compliant Min Qty: 10000 Package Multiple: 10000 Lead time: 10 Weeks, 0 Days Container: Reel | 10000 |
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$0.0146 / $0.0156 | Buy Now |
DISTI #
863-MMBT5551LT3G
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Mouser Electronics | Bipolar Transistors - BJT 600mA 160V NPN RoHS: Compliant | 37454 |
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$0.0190 / $0.1500 | Buy Now |
DISTI #
V36:1790_07309905
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Arrow Electronics | Trans GP BJT NPN 160V 0.6A 300mW 3-Pin SOT-23 T/R RoHS: Compliant Min Qty: 10000 Package Multiple: 10000 Lead time: 10 Weeks Date Code: 2449 | Americas - 70000 |
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$0.0147 / $0.0196 | Buy Now |
DISTI #
V72:2272_07309905
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Arrow Electronics | Trans GP BJT NPN 160V 0.6A 300mW 3-Pin SOT-23 T/R RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 10 Weeks Date Code: 2433 Container: Cut Strips | Americas - 32000 |
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$0.0198 / $0.1421 | Buy Now |
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Future Electronics | MMBT5551 Series NPN 160 V 0.6 A SMT High Voltage Silicon Transistor - SOT-23 RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 1 Lead time: 10 Weeks Container: Cut Tape/Mini-Reel | 24Cut Tape/Mini-Reel |
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$0.0318 / $0.1270 | Buy Now |
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Future Electronics | MMBT5551 Series NPN 160 V 0.6 A SMT High Voltage Silicon Transistor - SOT-23 RoHS: Compliant pbFree: Yes Min Qty: 50000 Package Multiple: 10000 Lead time: 10 Weeks Container: Reel | 0Reel |
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$0.0147 / $0.0156 | Buy Now |
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Onlinecomponents.com | ON Semi MMBT5551LT3G NPN Bipolar Transistor, 0.6 A, 160 V, 3-Pin SOT-23 RoHS: Compliant |
20000 In Stock |
|
$0.0142 / $0.0160 | Buy Now |
DISTI #
87117738
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Verical | Trans GP BJT NPN 160V 0.6A 300mW 3-Pin SOT-23 T/R RoHS: Compliant Min Qty: 10000 Package Multiple: 10000 Date Code: 2449 | Americas - 70000 |
|
$0.0147 / $0.0196 | Buy Now |
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MMBT5551LT3G
onsemi
Buy Now
Datasheet
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MMBT5551LT3G
onsemi
High Voltage NPN Bipolar Transistor, SOT-23 (TO-236) 3 LEAD, 10000-REEL
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | ONSEMI | |
Part Package Code | SOT-23 (TO-236) 3 LEAD | |
Pin Count | 3 | |
Manufacturer Package Code | 318 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 10 Weeks | |
Date Of Intro | 1999-01-01 | |
Samacsys Manufacturer | onsemi | |
Collector Current-Max (IC) | 0.06 A | |
Collector-Emitter Voltage-Max | 160 V | |
Configuration | SINGLE | |
DC Current Gain-Min (hFE) | 30 | |
JEDEC-95 Code | TO-236AB | |
JESD-30 Code | R-PDSO-G3 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | NPN | |
Power Dissipation-Max (Abs) | 0.3 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) - annealed | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON | |
Transition Frequency-Nom (fT) | 200 MHz | |
VCEsat-Max | 0.2 V |
This table gives cross-reference parts and alternative options found for MMBT5551LT3G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MMBT5551LT3G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
---|---|---|---|---|
MMBT5551 | Fairchild Semiconductor Corporation | $0.0400 | Small Signal Bipolar Transistor, 0.6A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN | MMBT5551LT3G vs MMBT5551 |
MMBT5551 | onsemi | Check for Price | 600 mA, 160 V NPN General Purpose Bipolar Junction Transistor Legacy Fairchild Part number, SOT-23-3, 3000-REEL | MMBT5551LT3G vs MMBT5551 |
MMBT5551 | Weitronic Enterprise Co Ltd | Check for Price | Small Signal Bipolar Transistor | MMBT5551LT3G vs MMBT5551 |
MMBT5551 | Texas Instruments | Check for Price | 200mA, 160V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB | MMBT5551LT3G vs MMBT5551 |
MMBT5551LT3 | onsemi | Check for Price | High Voltage NPN Bipolar Transistor, SOT-23 (TO-236) 3 LEAD, 10000-REEL | MMBT5551LT3G vs MMBT5551LT3 |
SMMBT5551LT1 | onsemi | Check for Price | 60mA, 160V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, CASE 318-08, TO-236, 3 PIN | MMBT5551LT3G vs SMMBT5551LT1 |
PMBT5551/T3 | Nexperia | Check for Price | Small Signal Bipolar Transistor | MMBT5551LT3G vs PMBT5551/T3 |
MMBT5551 | Micro Commercial Components | Check for Price | Small Signal Bipolar Transistor, 0.6A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC PACKAGE-3 | MMBT5551LT3G vs MMBT5551 |
MMBT5551/D87Z | Texas Instruments | Check for Price | 200mA, 160V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB | MMBT5551LT3G vs MMBT5551/D87Z |
PMBT5551TRL13 | NXP Semiconductors | Check for Price | TRANSISTOR 600 mA, 160 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal | MMBT5551LT3G vs PMBT5551TRL13 |
The maximum operating temperature range for the MMBT5551LT3G is -55°C to 150°C.
To ensure reliability, follow proper thermal management practices, such as providing adequate heat sinking and minimizing thermal resistance. Also, ensure that the device is operated within its recommended operating conditions.
The recommended storage temperature range for the MMBT5551LT3G is -55°C to 150°C.
Yes, the MMBT5551LT3G can be used in switching applications, but it's essential to ensure that the device is operated within its recommended switching frequency and voltage ratings to prevent overheating and premature failure.
To prevent electrostatic discharge (ESD) damage, handle the MMBT5551LT3G with proper ESD protection equipment, such as wrist straps and anti-static mats. Also, ensure that the device is stored in anti-static packaging.