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Part Details for MMBT5551LT1G by onsemi
Results Overview of MMBT5551LT1G by onsemi
- Distributor Offerings: (51 listings)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Education and Research
Industrial Automation
Audio and Video Systems
Electronic Manufacturing
MMBT5551LT1G Information
MMBT5551LT1G by onsemi is a Small Signal Bipolar Transistor.
Small Signal Bipolar Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for MMBT5551LT1G
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
88H4796
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Newark | Bjt, Npn, 160V, Sot-23, Transistor Polarity:Npn, Collector Emitter Voltage Max:160V, Continuous Collector Current:60Ma, Power Dissipation:225Mw, Transistor Mounting:Surface Mount, No. Of Pins:3Pins, Transition Frequency:- Rohs Compliant: Yes |Onsemi MMBT5551LT1G RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 135299 |
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$0.0180 / $0.0220 | Buy Now |
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DISTI #
03P0690
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Newark | Bjt, Npn, 160V, Sot-23, Full Reel, Transistor Polarity:Npn, Collector Emitter Voltage Max:160V, Continuous Collector Current:60Ma, Power Dissipation:225Mw, Transistor Mounting:Surface Mount, No. Of Pins:3Pins, Transition Frequency:- Rohs Compliant: Yes |Onsemi MMBT5551LT1G RoHS: Compliant Min Qty: 30000 Package Multiple: 1 Date Code: 1 Container: Reel | 6000 |
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$0.0140 | Buy Now |
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DISTI #
58M9157
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Newark | Transistor, Npn, 160 V, 0.6 A, Sot-23-3, Transistor Polarity:Npn, Collector Emitter Voltage Max:160V, Continuous Collector Current:600Ma, Power Dissipation:225Mw, Transistor Mounting:Surface Mount, No. Of Pins:3Pins, Product Range:- Rohs Compliant: Yes |Onsemi MMBT5551LT1G RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 2385 |
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$0.0200 / $0.0220 | Buy Now |
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DISTI #
MMBT5551LT1GOSCT-ND
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DigiKey | TRANS NPN 160V 0.6A SOT23-3 Min Qty: 1 Lead time: 10 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
296769 In Stock |
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$0.0158 / $0.1500 | Buy Now |
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DISTI #
MMBT5551LT1G
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Avnet Americas | Single Bipolar Transistor, NPN, 160 V, 600 mA, 225 mW, SOT-23, 3 Pins, Surface Mount - Tape and Reel (Alt: MMBT5551LT1G) RoHS: Compliant Min Qty: 41667 Package Multiple: 1 Lead time: 0 Weeks, 2 Days Container: Reel | 2304000 Partner Stock |
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$0.0150 / $0.0160 | Buy Now |
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DISTI #
88H4796
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Avnet Americas | Single Bipolar Transistor, NPN, 160 V, 600 mA, 225 mW, SOT-23, 3 Pins, Surface Mount - Product that comes on tape, but is not reeled (Alt: 88H4796) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 17 Weeks, 1 Days Container: Ammo Pack | 135299 Partner Stock |
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$0.0440 / $0.1050 | Buy Now |
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DISTI #
03P0690
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Avnet Americas | Single Bipolar Transistor, NPN, 160 V, 600 mA, 225 mW, SOT-23, 3 Pins, Surface Mount - Tape and Reel (Alt: 03P0690) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 55 Weeks, 2 Days Container: Reel | 6000 Partner Stock |
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$0.0210 / $0.0230 | Buy Now |
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DISTI #
MMBT5551LT1G
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Avnet Americas | Single Bipolar Transistor, NPN, 160 V, 600 mA, 225 mW, SOT-23, 3 Pins, Surface Mount - Tape and Reel (Alt: MMBT5551LT1G) RoHS: Compliant Min Qty: 60000 Package Multiple: 30000 Lead time: 10 Weeks, 0 Days Container: Reel | 0 |
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RFQ | |
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DISTI #
MMBT5551LT1G
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Avnet Americas | Single Bipolar Transistor, NPN, 160 V, 600 mA, 225 mW, SOT-23, 3 Pins, Surface Mount - Tape and Reel (Alt: MMBT5551LT1G) RoHS: Compliant Min Qty: 60000 Package Multiple: 30000 Lead time: 10 Weeks, 0 Days Container: Reel | 0 |
|
RFQ | |
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DISTI #
863-MMBT5551LT1G
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Mouser Electronics | Bipolar Transistors - BJT 600mA 160V NPN RoHS: Compliant | 4010 |
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$0.0180 / $0.1500 | Buy Now |
Part Details for MMBT5551LT1G
MMBT5551LT1G CAD Models
MMBT5551LT1G Part Data Attributes
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MMBT5551LT1G
onsemi
Buy Now
Datasheet
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Compare Parts:
MMBT5551LT1G
onsemi
High Voltage NPN Bipolar Transistor, SOT-23 (TO-236) 3 LEAD, 3000-REEL
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ONSEMI | |
| Part Package Code | SOT-23 (TO-236) 3 LEAD | |
| Pin Count | 3 | |
| Manufacturer Package Code | 318 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.21.00.95 | |
| Factory Lead Time | 10 Weeks | |
| Date Of Intro | 1999-01-01 | |
| Samacsys Manufacturer | onsemi | |
| Collector Current-Max (IC) | 0.06 A | |
| Collector-Emitter Voltage-Max | 160 V | |
| Configuration | SINGLE | |
| DC Current Gain-Min (hFE) | 30 | |
| JEDEC-95 Code | TO-236AB | |
| JESD-30 Code | R-PDSO-G3 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | NPN | |
| Power Dissipation-Max (Abs) | 0.3 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| VCEsat-Max | 0.2 V |
Alternate Parts for MMBT5551LT1G
This table gives cross-reference parts and alternative options found for MMBT5551LT1G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MMBT5551LT1G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| MMBT5551 | Fairchild Semiconductor Corporation | $0.0400 | Small Signal Bipolar Transistor, 0.6A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN | MMBT5551LT1G vs MMBT5551 |
| MMBT5551 | onsemi | Check for Price | 600 mA, 160 V NPN General Purpose Bipolar Junction Transistor Legacy Fairchild Part number, SOT-23-3, 3000-REEL | MMBT5551LT1G vs MMBT5551 |
| MMBT5551 | Weitronic Enterprise Co Ltd | Check for Price | Small Signal Bipolar Transistor | MMBT5551LT1G vs MMBT5551 |
| MMBT5551 | Texas Instruments | Check for Price | 200mA, 160V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB | MMBT5551LT1G vs MMBT5551 |
| MMBT5551LT3 | onsemi | Check for Price | High Voltage NPN Bipolar Transistor, SOT-23 (TO-236) 3 LEAD, 10000-REEL | MMBT5551LT1G vs MMBT5551LT3 |
| SMMBT5551LT1 | onsemi | Check for Price | 60mA, 160V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, CASE 318-08, TO-236, 3 PIN | MMBT5551LT1G vs SMMBT5551LT1 |
| PMBT5551/T3 | Nexperia | Check for Price | Small Signal Bipolar Transistor | MMBT5551LT1G vs PMBT5551/T3 |
| MMBT5551 | Micro Commercial Components | Check for Price | Small Signal Bipolar Transistor, 0.6A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC PACKAGE-3 | MMBT5551LT1G vs MMBT5551 |
| MMBT5551/D87Z | Texas Instruments | Check for Price | 200mA, 160V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB | MMBT5551LT1G vs MMBT5551/D87Z |
| PMBT5551TRL13 | NXP Semiconductors | Check for Price | TRANSISTOR 600 mA, 160 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal | MMBT5551LT1G vs PMBT5551TRL13 |
MMBT5551LT1G Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the MMBT5551LT1G is -55°C to 150°C.
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Yes, the MMBT5551LT1G is suitable for high-frequency applications up to 1 GHz due to its low capacitance and high transition frequency (fT).
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The recommended storage temperature range for the MMBT5551LT1G is -55°C to 150°C.
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Yes, the MMBT5551LT1G can be used in switching applications due to its low saturation voltage and high current gain.
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Yes, the MMBT5551LT1G is RoHS (Restriction of Hazardous Substances) compliant, meaning it does not contain hazardous substances like lead, mercury, and cadmium.