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Part Details for MMBT5551 by Taitron Components Inc
Results Overview of MMBT5551 by Taitron Components Inc
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Education and Research
Industrial Automation
Audio and Video Systems
Electronic Manufacturing
MMBT5551 Information
MMBT5551 by Taitron Components Inc is a Small Signal Bipolar Transistor.
Small Signal Bipolar Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for MMBT5551
| Part # | Distributor | Description | Stock | Price | Buy | |
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Onlinecomponents.com | Trans GP BJT NPN 160V 0.6A 3-Pin SOT-23 T/R RoHS: Compliant | 0 |
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$0.0276 / $0.0323 | Buy Now |
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Quest Components | 600 MA, 160 V, NPN, SI, SMALL SIGNAL TRANSISTOR, TO-236 | 693 |
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$0.0343 / $0.0548 | Buy Now |
Part Details for MMBT5551
MMBT5551 CAD Models
MMBT5551 Part Data Attributes
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MMBT5551
Taitron Components Inc
Buy Now
Datasheet
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MMBT5551
Taitron Components Inc
Small Signal Bipolar Transistor,
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | TAITRON COMPONENTS INC | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | TAITRON COMPONENTS | |
| Collector Current-Max (IC) | 0.6 A | |
| Collector-Emitter Voltage-Max | 160 V | |
| Configuration | SINGLE | |
| DC Current Gain-Min (hFE) | 30 | |
| JESD-30 Code | R-PDSO-G3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | NPN | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
MMBT5551 Frequently Asked Questions (FAQ)
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The recommended PCB footprint for the MMBT5551 is a standard SOT-23 package with a 1.3mm x 0.8mm pad size and a 0.5mm lead pitch.
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The MMBT5551 is rated for operation up to 150°C, but it's recommended to derate the power dissipation at higher temperatures to ensure reliability. Consult the datasheet for thermal derating information.
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To ensure the MMBT5551 is properly biased for saturation, ensure the base-emitter voltage (Vbe) is at least 0.7V and the collector-emitter voltage (Vce) is less than the specified maximum rating. Consult the datasheet for recommended operating conditions.
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The MMBT5551 is rated for a maximum collector current (Ic) of 500mA and a maximum peak current (Icp) of 1A. However, it's recommended to derate the current handling capability based on the operating temperature and other application-specific factors.
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The MMBT5551 is a general-purpose transistor and is not optimized for high-frequency applications. It has a transition frequency (fT) of around 100MHz, which may not be suitable for high-frequency switching applications. Consult the datasheet for more information on frequency response.