Part Details for MMBT5551-G by Comchip Technology Corporation Ltd
Results Overview of MMBT5551-G by Comchip Technology Corporation Ltd
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Education and Research
Industrial Automation
Audio and Video Systems
Electronic Manufacturing
MMBT5551-G Information
MMBT5551-G by Comchip Technology Corporation Ltd is a Small Signal Bipolar Transistor.
Small Signal Bipolar Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for MMBT5551-G
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
750-MMBT5551-G
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Mouser Electronics | RF Bipolar Transistors VCEO=160V IC=600mA RoHS: Compliant | 2927 |
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$0.0380 / $0.3900 | Buy Now |
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NAC | Transistor RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 | 0 |
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RFQ |
Part Details for MMBT5551-G
MMBT5551-G CAD Models
MMBT5551-G Part Data Attributes
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MMBT5551-G
Comchip Technology Corporation Ltd
Buy Now
Datasheet
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MMBT5551-G
Comchip Technology Corporation Ltd
Small Signal Bipolar Transistor,
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| Rohs Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | COMCHIP TECHNOLOGY CO LTD | |
| Package Description | SOT-23, 3 PIN | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.21.00.95 | |
| Samacsys Manufacturer | Comchip Technology | |
| Collector Current-Max (IC) | 0.6 A | |
| Collector-Base Capacitance-Max | 6 pF | |
| Collector-Emitter Voltage-Max | 160 V | |
| Configuration | SINGLE | |
| DC Current Gain-Min (hFE) | 50 | |
| JESD-30 Code | R-PDSO-G3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | NPN | |
| Power Dissipation Ambient-Max | 0.3 W | |
| Power Dissipation-Max (Abs) | 0.3 W | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Transition Frequency-Nom (fT) | 100 MHz | |
| VCEsat-Max | 0.2 V |
MMBT5551-G Frequently Asked Questions (FAQ)
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The recommended operating temperature range for MMBT5551-G is -55°C to 150°C, although the device can withstand storage temperatures from -65°C to 200°C.
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To ensure reliability in high-temperature applications, it's essential to follow proper derating guidelines, use a suitable heat sink, and ensure good thermal conductivity between the device and the heat sink.
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The maximum allowable power dissipation for MMBT5551-G is 625 mW at a junction temperature of 25°C. However, this value decreases as the junction temperature increases.
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While MMBT5551-G is primarily designed for linear applications, it can be used in switching applications with caution. However, the device's switching characteristics, such as rise and fall times, may not be optimized for high-frequency switching.
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To prevent electrostatic discharge (ESD) damage, it's essential to follow proper handling and storage procedures, such as using anti-static wrist straps, mats, and packaging materials.