Datasheets
MMBT5551-7 by: Diodes Incorporated

Small Signal Bipolar Transistor, 0.2A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC PACKAGE-3

Part Details for MMBT5551-7 by Diodes Incorporated

Results Overview of MMBT5551-7 by Diodes Incorporated

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MMBT5551-7 Information

MMBT5551-7 by Diodes Incorporated is a Small Signal Bipolar Transistor.
Small Signal Bipolar Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for MMBT5551-7

Part # Distributor Description Stock Price Buy
DISTI # MMBT5551-7
Avnet Americas Transistor GP BJT NPN 160V 0.6A 3-Pin SOT-23 T/R - Tape and Reel (Alt: MMBT5551-7) RoHS: Not Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 111 Weeks, 0 Days Container: Reel 0
RFQ
Bristol Electronics   1864
RFQ
Quest Components   1458
  • 1 $0.4800
  • 27 $0.2160
  • 232 $0.1440
$0.1440 / $0.4800 Buy Now

Part Details for MMBT5551-7

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MMBT5551-7 Part Data Attributes

MMBT5551-7 Diodes Incorporated
Buy Now Datasheet
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MMBT5551-7 Diodes Incorporated Small Signal Bipolar Transistor, 0.2A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC PACKAGE-3
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer DIODES INC
Package Description PLASTIC PACKAGE-3
Pin Count 3
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 111 Weeks
Samacsys Manufacturer Diodes Incorporated
Collector Current-Max (IC) 0.2 A
Collector-Emitter Voltage-Max 160 V
Configuration SINGLE
DC Current Gain-Min (hFE) 30
JESD-30 Code R-PDSO-G3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type NPN
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish TIN LEAD
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 100 MHz

Alternate Parts for MMBT5551-7

This table gives cross-reference parts and alternative options found for MMBT5551-7. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MMBT5551-7, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
MMBT5551LT1 onsemi Check for Price High Voltage NPN Bipolar Transistor, SOT-23 (TO-236) 3 LEAD, 3000-REEL MMBT5551-7 vs MMBT5551LT1
Part Number Manufacturer Composite Price Description Compare
MMBT5551LT3 onsemi Check for Price High Voltage NPN Bipolar Transistor, SOT-23 (TO-236) 3 LEAD, 10000-REEL MMBT5551-7 vs MMBT5551LT3
PMBT5551,215 Nexperia $0.0380 PMBT5551 - NPN high-voltage transistor@en-us TO-236 3-Pin MMBT5551-7 vs PMBT5551,215
MMBT5551LT3G onsemi Check for Price High Voltage NPN Bipolar Transistor, SOT-23 (TO-236) 3 LEAD, 10000-REEL MMBT5551-7 vs MMBT5551LT3G
PMBT5551,235 Nexperia Check for Price PMBT5551 - NPN high-voltage transistor@en-us TO-236 3-Pin MMBT5551-7 vs PMBT5551,235
MMBT5551-7-F Diodes Incorporated $0.0179 Small Signal Bipolar Transistor, 0.2A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, LEAD FREE, PLASTIC PACKAGE-3 MMBT5551-7 vs MMBT5551-7-F
2N5551TA onsemi $0.1146 Small Signal NPN Bipolar Transistor, TO-92-3 LF, 2000-FNFLD MMBT5551-7 vs 2N5551TA
2N5551TFR onsemi $0.0549 Small Signal NPN Bipolar Transistor, TO-92-3 LF, 2000-REEL MMBT5551-7 vs 2N5551TFR
2N5551 Central Semiconductor Corp Check for Price Small Signal Bipolar Transistor, 0.6A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92, 3 PIN MMBT5551-7 vs 2N5551
2N5551BU onsemi $0.0683 Small Signal NPN Bipolar Transistor, TO-92-3, 10000-BLKBG MMBT5551-7 vs 2N5551BU
2N5551TF onsemi $0.0736 Small Signal NPN Bipolar Transistor, TO-92-3 LF, 2000-REEL MMBT5551-7 vs 2N5551TF

MMBT5551-7 Related Parts

MMBT5551-7 Frequently Asked Questions (FAQ)

  • The recommended operating temperature range for MMBT5551-7 is -55°C to 150°C, although the device can withstand storage temperatures from -65°C to 200°C.

  • To ensure reliability in high-temperature applications, it's essential to follow proper derating guidelines, use a suitable heat sink, and ensure good thermal conductivity between the device and the heat sink.

  • The maximum allowable power dissipation for MMBT5551-7 is 625 mW at a temperature of 25°C. However, this value decreases as the temperature increases, so it's essential to consult the datasheet for derating information.

  • While MMBT5551-7 is primarily designed for linear applications, it can be used in switching applications with caution. However, the device's switching characteristics may not be as optimal as those of a dedicated switching transistor, and the user should carefully evaluate the device's performance in their specific application.

  • To prevent electrostatic discharge (ESD) damage, it's essential to follow proper handling and storage procedures, such as using anti-static wrist straps, mats, and packaging materials. Additionally, the device should be soldered into a circuit with ESD protection components, such as TVS diodes or ESD-protection ICs.

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