Part Details for MMBT5551-7 by Diodes Incorporated
Results Overview of MMBT5551-7 by Diodes Incorporated
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (1 replacement)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
MMBT5551-7 Information
MMBT5551-7 by Diodes Incorporated is a Small Signal Bipolar Transistor.
Small Signal Bipolar Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for MMBT5551-7
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
MMBT5551-7
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Avnet Americas | Transistor GP BJT NPN 160V 0.6A 3-Pin SOT-23 T/R - Tape and Reel (Alt: MMBT5551-7) RoHS: Not Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 111 Weeks, 0 Days Container: Reel | 0 |
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RFQ | |
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Bristol Electronics | 1864 |
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RFQ | ||
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Quest Components | 1458 |
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$0.1440 / $0.4800 | Buy Now |
Part Details for MMBT5551-7
MMBT5551-7 CAD Models
MMBT5551-7 Part Data Attributes
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MMBT5551-7
Diodes Incorporated
Buy Now
Datasheet
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Compare Parts:
MMBT5551-7
Diodes Incorporated
Small Signal Bipolar Transistor, 0.2A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC PACKAGE-3
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Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | DIODES INC | |
Package Description | PLASTIC PACKAGE-3 | |
Pin Count | 3 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 111 Weeks | |
Samacsys Manufacturer | Diodes Incorporated | |
Collector Current-Max (IC) | 0.2 A | |
Collector-Emitter Voltage-Max | 160 V | |
Configuration | SINGLE | |
DC Current Gain-Min (hFE) | 30 | |
JESD-30 Code | R-PDSO-G3 | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | NPN | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | TIN LEAD | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON | |
Transition Frequency-Nom (fT) | 100 MHz |
Alternate Parts for MMBT5551-7
This table gives cross-reference parts and alternative options found for MMBT5551-7. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MMBT5551-7, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
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MMBT5551LT1 | onsemi | Check for Price | High Voltage NPN Bipolar Transistor, SOT-23 (TO-236) 3 LEAD, 3000-REEL | MMBT5551-7 vs MMBT5551LT1 |
MMBT5551-7 Frequently Asked Questions (FAQ)
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The recommended operating temperature range for MMBT5551-7 is -55°C to 150°C, although the device can withstand storage temperatures from -65°C to 200°C.
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To ensure reliability in high-temperature applications, it's essential to follow proper derating guidelines, use a suitable heat sink, and ensure good thermal conductivity between the device and the heat sink.
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The maximum allowable power dissipation for MMBT5551-7 is 625 mW at a temperature of 25°C. However, this value decreases as the temperature increases, so it's essential to consult the datasheet for derating information.
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While MMBT5551-7 is primarily designed for linear applications, it can be used in switching applications with caution. However, the device's switching characteristics may not be as optimal as those of a dedicated switching transistor, and the user should carefully evaluate the device's performance in their specific application.
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To prevent electrostatic discharge (ESD) damage, it's essential to follow proper handling and storage procedures, such as using anti-static wrist straps, mats, and packaging materials. Additionally, the device should be soldered into a circuit with ESD protection components, such as TVS diodes or ESD-protection ICs.