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High Voltage NPN Bipolar Transistor, SOT-23 (TO-236) 3 LEAD, 3000-REEL
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
MMBT5550LT1G by onsemi is a Small Signal Bipolar Transistor.
Small Signal Bipolar Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
31Y2782
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Newark | Bipolar (Bjt) Single Transistor, General Purpose, Npn, 140 V, 225 Mw, 600 Ma, 250 Rohs Compliant: Yes |Onsemi MMBT5550LT1G RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 1 Container: Reel | 6000 |
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$0.0240 / $0.0270 | Buy Now |
DISTI #
88H4795
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Newark | Bipolar Transistor, Npn, Sot-23, 140V, Transistor Polarity:Npn, Collector Emitter Voltage Max:140V, Continuous Collector Current:600Ma, Power Dissipation:225Mw, Transistor Mounting:Surface Mount, No. Of Pins:3Pins Rohs Compliant: Yes |Onsemi MMBT5550LT1G RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 3461 |
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$0.0180 / $0.0190 | Buy Now |
DISTI #
MMBT5550LT1GOSCT-ND
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DigiKey | TRANS NPN 140V 0.6A SOT23-3 Min Qty: 1 Lead time: 10 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
38583 In Stock |
|
$0.0143 / $0.1400 | Buy Now |
DISTI #
88H4795
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Avnet Americas | Single Bipolar Transistor, NPN, 140 V, 600 mA, 225 mW, SOT-23 (TO-236), 3 Pins, Surface Mount - Product that comes on tape, but is not reeled (Alt: 88H4795) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 21 Weeks, 4 Days Container: Ammo Pack | 3461 Partner Stock |
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$0.0340 / $0.1050 | Buy Now |
DISTI #
863-MMBT5550LT1G
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Mouser Electronics | Bipolar Transistors - BJT SS HV XSTR NPN 160V RoHS: Compliant | 46569 |
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$0.0160 / $0.1300 | Buy Now |
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Future Electronics | MMBT Series 140 V 60 mA SMT NPN Silicon Transistor - SOT-23 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Lead time: 10 Weeks Container: Reel | 39000Reel |
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$0.0122 / $0.0134 | Buy Now |
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Future Electronics | MMBT Series 140 V 60 mA SMT NPN Silicon Transistor - SOT-23 RoHS: Compliant pbFree: Yes Min Qty: 60000 Package Multiple: 3000 Lead time: 10 Weeks Container: Reel | 0Reel |
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$0.0122 / $0.0134 | Buy Now |
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Onlinecomponents.com | Bipolar (BJT) Transistor NPN 140 V 600 mA 225 mW Surface Mount SOT-23-3 (TO-236) RoHS: Compliant |
60000 In Stock |
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$0.0125 / $0.0154 | Buy Now |
DISTI #
86000475
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Verical | Trans GP BJT NPN 140V 0.6A 300mW 3-Pin SOT-23 T/R RoHS: Compliant Min Qty: 9837 Package Multiple: 1 Date Code: 2201 | Americas - 102000 |
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$0.0381 | Buy Now |
DISTI #
83641027
|
Verical | Trans GP BJT NPN 140V 0.6A 300mW 3-Pin SOT-23 T/R RoHS: Compliant Min Qty: 6000 Package Multiple: 3000 Date Code: 2432 | Americas - 60000 |
|
$0.0169 / $0.0200 | Buy Now |
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MMBT5550LT1G
onsemi
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Datasheet
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Compare Parts:
MMBT5550LT1G
onsemi
High Voltage NPN Bipolar Transistor, SOT-23 (TO-236) 3 LEAD, 3000-REEL
|
Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | ONSEMI | |
Part Package Code | SOT-23 (TO-236) 3 LEAD | |
Pin Count | 3 | |
Manufacturer Package Code | 318 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 10 Weeks | |
Date Of Intro | 1999-01-01 | |
Samacsys Manufacturer | onsemi | |
Collector Current-Max (IC) | 0.6 A | |
Collector-Emitter Voltage-Max | 140 V | |
Configuration | SINGLE | |
DC Current Gain-Min (hFE) | 20 | |
JEDEC-95 Code | TO-236AB | |
JESD-30 Code | R-PDSO-G3 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | NPN | |
Power Dissipation-Max (Abs) | 0.3 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) - annealed | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON | |
Transition Frequency-Nom (fT) | 200 MHz | |
VCEsat-Max | 0.25 V |
This table gives cross-reference parts and alternative options found for MMBT5550LT1G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MMBT5550LT1G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
---|---|---|---|---|
MMBT5550LT1 | onsemi | Check for Price | High Voltage NPN Bipolar Transistor, SOT-23 (TO-236) 3 LEAD, 3000-REEL | MMBT5550LT1G vs MMBT5550LT1 |
MMBT5550LT1 | Rectron Semiconductor | Check for Price | Small Signal Bipolar Transistor, 0.6A I(C), 140V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC PACKAGE-3 | MMBT5550LT1G vs MMBT5550LT1 |
MMBT5551LT1 | Rochester Electronics LLC | Check for Price | 60mA, 160V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, CASE 318-08, TO-236, 3 PIN | MMBT5550LT1G vs MMBT5551LT1 |
MMBT5551LT3 | Motorola Semiconductor Products | Check for Price | Small Signal Bipolar Transistor, 0.6A I(C), 140V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB | MMBT5550LT1G vs MMBT5551LT3 |
MMBT5551LT3 | Motorola Mobility LLC | Check for Price | 600mA, 140V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB | MMBT5550LT1G vs MMBT5551LT3 |
MMBT5551LT1 | Motorola Mobility LLC | Check for Price | 600mA, 140V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB | MMBT5550LT1G vs MMBT5551LT1 |
The maximum operating temperature range for the MMBT5550LT1G is -55°C to 150°C.
To ensure reliability, it's essential to follow proper thermal management practices, such as providing adequate heat sinking, minimizing power dissipation, and avoiding thermal runaway conditions.
The recommended storage temperature range for the MMBT5550LT1G is -55°C to 150°C, with a relative humidity of 60% or less.
Yes, the MMBT5550LT1G can be used in switching applications, but it's essential to consider the transistor's switching characteristics, such as rise and fall times, and ensure that the application is within the device's safe operating area.
To prevent electrostatic discharge (ESD) damage, handle the MMBT5550LT1G with ESD-protective equipment, such as wrist straps and mats, and follow proper handling and storage procedures.