Part Details for MMBT3906 by Galaxy Microelectronics
Results Overview of MMBT3906 by Galaxy Microelectronics
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- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Audio and Video Systems
MMBT3906 Information
MMBT3906 by Galaxy Microelectronics is a Small Signal Bipolar Transistor.
Small Signal Bipolar Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for MMBT3906
MMBT3906 CAD Models
MMBT3906 Part Data Attributes
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MMBT3906
Galaxy Microelectronics
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Datasheet
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MMBT3906
Galaxy Microelectronics
General Purpose PNP Bipolar Transistor; Polarity: PNP; V(BR)CEO Min (V): 40V; IC (A): 0.1A; HFE Min: 100; HFE Max: 300; VCE (V): 1V; IC (mA): 10mA; VCE(SAT) (V): 0.3V; IC (mA)1: 50mA; IB (mA): 5mA; FT Min (MHz): 250 MHz; PTM Max (W): 0.25W; Package: SOT-23; package_code: SOT-23; mfr_package_code: SOT-23
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD | |
| Part Package Code | SOT-23 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Collector Current-Max (IC) | 0.1 A | |
| Collector-Emitter Voltage-Max | 40 V | |
| Configuration | SINGLE | |
| DC Current Gain-Min (hFE) | 30 | |
| JESD-30 Code | R-PDSO-G3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -65 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | PNP | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Transition Frequency-Nom (fT) | 250 MHz | |
| Turn-off Time-Max (toff) | 300 ns | |
| Turn-on Time-Max (ton) | 65 ns |