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Part Details for MMBT2222A by onsemi
Results Overview of MMBT2222A by onsemi
- Distributor Offerings: (6 listings)
- Number of FFF Equivalents: (8 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Audio and Video Systems
MMBT2222A Information
MMBT2222A by onsemi is a Small Signal Bipolar Transistor.
Small Signal Bipolar Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for MMBT2222A
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 2754 |
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RFQ | ||
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Bristol Electronics | 2308 |
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RFQ | ||
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Ameya Holding Limited | 三极管 | 164 |
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Buy Now RFQ | |
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ComSIT USA | Small Signal Bipolar Transistor, 1A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AA ECCN: EAR99 RoHS: Compliant |
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RFQ | |
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DISTI #
MMBT2222A
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Avnet Silica | Transistor GP BJT NPN 40V 1A 3Pin SOT23 TR (Alt: MMBT2222A) RoHS: Compliant Min Qty: 30000 Package Multiple: 3000 Lead time: 143 Weeks, 0 Days | Silica - 0 |
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Buy Now | |
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DISTI #
MMBT2222A
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EBV Elektronik | Transistor GP BJT NPN 40V 1A 3Pin SOT23 TR (Alt: MMBT2222A) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 143 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for MMBT2222A
MMBT2222A CAD Models
MMBT2222A Part Data Attributes
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MMBT2222A
onsemi
Buy Now
Datasheet
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Compare Parts:
MMBT2222A
onsemi
(Legacy Fairchild) NPN General Purpose Amplifier, SOT-23-3, 3000-REEL
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | ONSEMI | |
| Part Package Code | SOT-23-3 | |
| Package Description | SOT-23, 3 PIN | |
| Manufacturer Package Code | 318BM | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | onsemi | |
| Case Connection | COLLECTOR | |
| Collector Current-Max (IC) | 1 A | |
| Collector-Emitter Voltage-Max | 40 V | |
| Configuration | SINGLE | |
| DC Current Gain-Min (hFE) | 75 | |
| JEDEC-95 Code | TO-236AA | |
| JESD-30 Code | R-PDSO-G3 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | NPN | |
| Power Dissipation-Max (Abs) | 0.225 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Transition Frequency-Nom (fT) | 300 MHz | |
| Turn-off Time-Max (toff) | 285 ns | |
| Turn-on Time-Max (ton) | 35 ns |
Alternate Parts for MMBT2222A
This table gives cross-reference parts and alternative options found for MMBT2222A. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MMBT2222A, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| MMBT2222A_R1_00001 | PanJit Semiconductor | Check for Price | Small Signal Bipolar Transistor | MMBT2222A vs MMBT2222A_R1_00001 |
| MMBT2222A | Micro Commercial Components | Check for Price | Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN | MMBT2222A vs MMBT2222A |
| MMBT2222 | onsemi | Check for Price | NPN General Purpose Amplifier, SOT-23 3L, 15000-TAPE REEL | MMBT2222A vs MMBT2222 |
| MMBT2222A/L99Z | Texas Instruments | Check for Price | 1000mA, 40V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB | MMBT2222A vs MMBT2222A/L99Z |
| MMBT2222AL99Z | Fairchild Semiconductor Corporation | Check for Price | Small Signal Bipolar Transistor, 1A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon | MMBT2222A vs MMBT2222AL99Z |
| MMBT2222LT1G | onsemi | $0.0250 | NPN Bipolar Transistor, SOT-23 (TO-236) 3 LEAD, 3000-REEL | MMBT2222A vs MMBT2222LT1G |
| MMBT2222AD87Z | Fairchild Semiconductor Corporation | Check for Price | TRANSISTOR 1000 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal | MMBT2222A vs MMBT2222AD87Z |
| MMBT2222A/S62Z | Texas Instruments | Check for Price | 1000mA, 40V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB | MMBT2222A vs MMBT2222A/S62Z |
MMBT2222A Frequently Asked Questions (FAQ)
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The MMBT2222A can operate safely between -55°C to 150°C, but the recommended operating temperature range is -40°C to 125°C.
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To ensure linear operation, the MMBT2222A should be biased with a collector-emitter voltage (Vce) between 1V to 10V, and a base-emitter voltage (Vbe) between 0.6V to 0.8V.
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The MMBT2222A can handle a maximum continuous collector current (Ic) of 600mA, and a peak current of 1A for a short duration.
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To protect the MMBT2222A from ESD, handle the device with an anti-static wrist strap or mat, and avoid touching the pins or leads. Also, ensure that the device is stored in an anti-static bag or tube.
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Yes, the MMBT2222A can be used as a switch, but it's not recommended due to its relatively low current handling capability and limited power dissipation. A more suitable transistor for switching applications would be a higher-power device.