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N-Channel JFET Transistor, SOT-23 (TO-236) 3 LEAD, 3000-REEL
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
MMBF4393LT1G by onsemi is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
45J1524
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Newark | N Channel Jfet, -30V, Sot-23, Gate Source Breakdown Voltage Max:30V, Zero Gate Voltage Drain Current Max:30Ma, Gate Source Cutoff Voltage Max:-3V, No. Of Pins:3 Pin, Operating Temperature Max:150°C, Channel Type:N Channel Rohs Compliant: Yes |Onsemi MMBF4393LT1G RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 365 |
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$0.1100 / $0.3120 | Buy Now |
DISTI #
29X6099
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Newark | Jfet, 30V, 0.3A, 0.225W, Sot-23-3, Gate Source Breakdown Voltage Max:30V, Zero Gate Voltage Drain Current Max:30Ma, Gate Source Cutoff Voltage Max:-3V, No. Of Pins:3 Pin, Operating Temperature Max:150°C, Channel Type:N Channel Rohs Compliant: Yes |Onsemi MMBF4393LT1G RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
|
$0.0670 / $0.1020 | Buy Now |
DISTI #
MMBF4393LT1GOSCT-ND
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DigiKey | JFET N-CH 30V SOT23-3 Min Qty: 1 Lead time: 14 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
40666 In Stock |
|
$0.0643 / $0.3500 | Buy Now |
DISTI #
MMBF4393LT1G
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Avnet Americas | - Tape and Reel (Alt: MMBF4393LT1G) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 14 Weeks, 0 Days Container: Reel | 117000 |
|
$0.0604 | Buy Now |
DISTI #
45J1524
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Avnet Americas | - Product that comes on tape, but is not reeled (Alt: 45J1524) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 20 Weeks, 4 Days Container: Ammo Pack | 365 Partner Stock |
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$0.1150 / $0.3050 | Buy Now |
DISTI #
863-MMBF4393LT1G
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Mouser Electronics | JFETs 30V 10mA RoHS: Compliant | 69639 |
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$0.0640 / $0.3200 | Buy Now |
DISTI #
E02:0323_00077390
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Arrow Electronics | Trans JFET N-CH 30V 3-Pin SOT-23 T/R RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 14 Weeks Date Code: 2514 | Europe - 534000 |
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$0.0553 / $0.0692 | Buy Now |
DISTI #
V36:1790_07284405
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Arrow Electronics | Trans JFET N-CH 30V 3-Pin SOT-23 T/R RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 14 Weeks Date Code: 2450 | Americas - 12000 |
|
$0.0614 / $0.0731 | Buy Now |
DISTI #
V72:2272_07284405
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Arrow Electronics | Trans JFET N-CH 30V 3-Pin SOT-23 T/R RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 14 Weeks Date Code: 2239 Container: Cut Strips | Americas - 6398 |
|
$0.0738 / $0.2712 | Buy Now |
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Future Electronics | MMBF4393LT1G Series N Channel 30 V 50 mA JFET Switching Transistor - SOT-23 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Lead time: 14 Weeks Container: Reel | 0Reel |
|
$0.0646 / $0.0685 | Buy Now |
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MMBF4393LT1G
onsemi
Buy Now
Datasheet
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Compare Parts:
MMBF4393LT1G
onsemi
N-Channel JFET Transistor, SOT-23 (TO-236) 3 LEAD, 3000-REEL
|
Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | ONSEMI | |
Part Package Code | SOT-23 (TO-236) 3 LEAD | |
Pin Count | 3 | |
Manufacturer Package Code | 318 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.21.00.95 | |
Factory Lead Time | 20 Weeks, 4 Days | |
Samacsys Manufacturer | onsemi | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain-source On Resistance-Max | 100 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 3.5 pF | |
JEDEC-95 Code | TO-236 | |
JESD-30 Code | R-PDSO-G3 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 0.225 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for MMBF4393LT1G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MMBF4393LT1G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
---|---|---|---|---|
MMBF4393LT1 | onsemi | Check for Price | N-Channel JFET Transistor, SOT-23 (TO-236) 3 LEAD, 3000-REEL | MMBF4393LT1G vs MMBF4393LT1 |
The maximum SOA for the MMBF4393LT1G is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal resistance and maximum junction temperature. As a general rule, it's recommended to operate the device within the specified absolute maximum ratings to ensure reliable operation.
To ensure proper biasing, follow the recommended biasing circuit and component values provided in the datasheet. Additionally, consider the device's current gain (β) and Early voltage (VA) when designing the bias network. It's also important to ensure the device is operated within the recommended operating conditions.
For optimal thermal performance, use a PCB layout that provides good thermal conduction and minimizes thermal resistance. Use a heat sink or thermal pad to dissipate heat, and ensure good airflow around the device. Follow the recommended land pattern and thermal design guidelines provided in the datasheet or application notes.
To prevent electrostatic discharge (ESD) damage, handle the device by the body or use an ESD wrist strap or mat. Ensure the PCB design includes ESD protection components, such as TVS diodes or resistors, to protect the device from ESD events.
The MMBF4393LT1G is manufactured by onsemi, which adheres to industry-standard quality and reliability standards, such as AEC-Q101 and ISO/TS 16949. The device is also qualified to automotive and industrial standards, ensuring high reliability and quality.