Part Details for MMBF170LT1G by Rochester Electronics LLC
Results Overview of MMBF170LT1G by Rochester Electronics LLC
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (1 replacement)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (4 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
MMBF170LT1G Information
MMBF170LT1G by Rochester Electronics LLC is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for MMBF170LT1G
MMBF170LT1G CAD Models
MMBF170LT1G Part Data Attributes
|
MMBF170LT1G
Rochester Electronics LLC
Buy Now
Datasheet
|
Compare Parts:
MMBF170LT1G
Rochester Electronics LLC
Small Signal Field-Effect Transistor,
|
Pbfree Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | ROCHESTER ELECTRONICS LLC | |
Part Package Code | SOT-23 | |
Pin Count | 3 | |
Manufacturer Package Code | CASE 318-08 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 0.5 A | |
Drain-source On Resistance-Max | 5 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-236AB | |
JESD-30 Code | R-PDSO-G3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 0.225 W | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for MMBF170LT1G
This table gives cross-reference parts and alternative options found for MMBF170LT1G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MMBF170LT1G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
---|---|---|---|---|
MMBF170L | Motorola Semiconductor Products | Check for Price | Small Signal Field-Effect Transistor, 0.5A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, CASE 318-07, 3 PIN | MMBF170LT1G vs MMBF170L |
MMBF170LT1G Frequently Asked Questions (FAQ)
-
The recommended operating temperature range for MMBF170LT1G is -55°C to 150°C.
-
Yes, MMBF170LT1G is a RoHS-compliant device, meaning it meets the European Union's Restriction of Hazardous Substances directive.
-
The maximum power dissipation for MMBF170LT1G is 1.5 watts.
-
Yes, MMBF170LT1G is a high-reliability device, suitable for use in aerospace, defense, and other high-reliability applications.
-
MMBF170LT1G is a specific Zener diode with unique characteristics, so it may not be a direct drop-in replacement for other Zener diodes. However, it can be used as a substitute in many applications with proper design consideration.