Part Details for MLD1N06CLT4 by Rochester Electronics LLC
Results Overview of MLD1N06CLT4 by Rochester Electronics LLC
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- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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MLD1N06CLT4 Information
MLD1N06CLT4 by Rochester Electronics LLC is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for MLD1N06CLT4
MLD1N06CLT4 CAD Models
MLD1N06CLT4 Part Data Attributes
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MLD1N06CLT4
Rochester Electronics LLC
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Datasheet
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MLD1N06CLT4
Rochester Electronics LLC
1A, 59V, 0.75ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 369C, DPAK-3
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| Pbfree Code | No | |
| Rohs Code | No | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ROCHESTER ELECTRONICS LLC | |
| Package Description | CASE 369C, DPAK-3 | |
| Pin Count | 3 | |
| Manufacturer Package Code | CASE 369C | |
| Reach Compliance Code | unknown | |
| Additional Feature | LOGIC LEVEL COMPATIBLE | |
| Avalanche Energy Rating (Eas) | 80 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN BIPOLAR TRANSISTOR, DIODE AND RESISTOR | |
| DS Breakdown Voltage-Min | 59 V | |
| Drain Current-Max (ID) | 1 A | |
| Drain-source On Resistance-Max | 0.75 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e0 | |
| Moisture Sensitivity Level | NOT SPECIFIED | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 240 | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 1.8 A | |
| Qualification Status | COMMERCIAL | |
| Surface Mount | YES | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |