-
Part Symbol
-
Footprint
-
3D Model
Available Download Formats
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
Part Details for MJE182G by onsemi
Results Overview of MJE182G by onsemi
- Distributor Offerings: (22 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (6 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
MJE182G Information
MJE182G by onsemi is a Power Bipolar Transistor.
Power Bipolar Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for MJE182G
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
26K4458
|
Newark | Power Transistor, Npn, 80V, To-225, Transistor Polarity:Npn, Collector Emitter Voltage Max:80V, Continuous Collector Current:3A, Power Dissipation:12.5W, Transistor Mounting:Through Hole, No. Of Pins:3Pins, Transition Frequency:50Mhzrohs Compliant: Yes |Onsemi MJE182G RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 3653 |
|
$0.1670 | Buy Now |
|
DISTI #
MJE182GOS-ND
|
DigiKey | TRANS NPN 80V 3A TO-126 Min Qty: 1 Lead time: 9 Weeks Container: Bulk |
11503 In Stock |
|
$0.2778 / $1.2400 | Buy Now |
|
DISTI #
MJE182G
|
Avnet Americas | Bipolar (BJT) Single Transistor, NPN, 80 V, 3 A, 1.5 W, TO-225, Through Hole - Bulk (Alt: MJE182G) RoHS: Compliant Min Qty: 3000 Package Multiple: 500 Lead time: 9 Weeks, 0 Days Container: Bulk | 0 |
|
RFQ | |
|
DISTI #
MJE182G
|
Avnet Americas | Bipolar (BJT) Single Transistor, NPN, 80 V, 3 A, 1.5 W, TO-225, Through Hole - Bulk (Alt: MJE182G) RoHS: Compliant Min Qty: 3000 Package Multiple: 500 Lead time: 9 Weeks, 0 Days Container: Bulk | 0 |
|
RFQ | |
|
DISTI #
26K4458
|
Avnet Americas | Bipolar (BJT) Single Transistor, NPN, 80 V, 3 A, 1.5 W, TO-225, Through Hole - Bulk (Alt: 26K4458) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 111 Weeks, 0 Days Container: Bulk | 0 |
|
$0.3020 / $1.0900 | Buy Now |
|
DISTI #
863-MJE182G
|
Mouser Electronics | Bipolar Transistors - BJT 3A 80V 12.5W NPN RoHS: Compliant | 3217 |
|
$0.2770 / $1.1700 | Buy Now |
|
|
Future Electronics | MJE Series 100 V 3 A NPN Complementary Plastic Silicon Power Transistor TO-225AA RoHS: Not Compliant pbFree: Yes Min Qty: 500 Package Multiple: 500 Lead time: 9 Weeks Container: Box | 7500Box |
|
$0.2550 / $0.2700 | Buy Now |
|
|
Future Electronics | MJE Series 100 V 3 A NPN Complementary Plastic Silicon Power Transistor TO-225AA RoHS: Not Compliant pbFree: Yes Min Qty: 1 Package Multiple: 1 Lead time: 9 Weeks Container: Box | 3842Box |
|
$0.2550 / $0.2850 | Buy Now |
|
|
Onlinecomponents.com | 3.0 A NPN Bipolar Power Transistor 80 V RoHS: Compliant |
10000 In Stock |
|
$0.2531 / $0.2892 | Buy Now |
|
DISTI #
83645024
|
Verical | Trans GP BJT NPN 80V 3A 1500mW 3-Pin(3+Tab) TO-225 Box Min Qty: 500 Package Multiple: 500 Date Code: 2432 | Americas - 10000 |
|
$0.3116 / $0.3402 | Buy Now |
Part Details for MJE182G
MJE182G CAD Models
MJE182G Part Data Attributes
|
|
MJE182G
onsemi
Buy Now
Datasheet
|
Compare Parts:
MJE182G
onsemi
3.0 A NPN Bipolar Power Transistor 80 V, TO-225, 500-BLKBX
|
| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ONSEMI | |
| Part Package Code | TO-225 | |
| Package Description | CASE 77-09, 3 PIN | |
| Pin Count | 3 | |
| Manufacturer Package Code | 77-09 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.75 | |
| Factory Lead Time | 9 Weeks | |
| Samacsys Manufacturer | onsemi | |
| Collector Current-Max (IC) | 3 A | |
| Collector-Emitter Voltage-Max | 80 V | |
| Configuration | SINGLE | |
| DC Current Gain-Min (hFE) | 12 | |
| JEDEC-95 Code | TO-225AA | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | NPN | |
| Power Dissipation-Max (Abs) | 1.5 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Transition Frequency-Nom (fT) | 50 MHz |
Alternate Parts for MJE182G
This table gives cross-reference parts and alternative options found for MJE182G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MJE182G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| MJE182 | onsemi | Check for Price | 3.0 A NPN Bipolar Power Transistor, TO-225, 500-BLKBX | MJE182G vs MJE182 |
| MJE182 | Taitron Components Inc | Check for Price | Power Bipolar Transistor, | MJE182G vs MJE182 |
| MJE182-BP | Micro Commercial Components | Check for Price | Power Bipolar Transistor, 3A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, TO-126, 3 PIN | MJE182G vs MJE182-BP |
| MJE182 | Micro Commercial Components | Check for Price | Power Bipolar Transistor, 3A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, TO-126, 3 PIN | MJE182G vs MJE182 |
| KSE182STU | Fairchild Semiconductor Corporation | Check for Price | Power Bipolar Transistor, 3A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, | MJE182G vs KSE182STU |
| MJE182STU | onsemi | Check for Price | 3.0 A NPN Power Bipolar Junction Transistor, TO-126-3, 1920-TUBE | MJE182G vs MJE182STU |
MJE182G Frequently Asked Questions (FAQ)
-
The maximum safe operating area (SOA) for the MJE182G is not explicitly stated in the datasheet. However, it can be estimated based on the device's thermal and electrical characteristics. A general guideline is to ensure that the device operates within the recommended voltage and current ratings, and to avoid operating in the saturation region for extended periods.
-
To ensure the MJE182G is properly biased for linear operation, it's essential to set the base-emitter voltage (VBE) and collector-emitter voltage (VCE) within the recommended ranges. Typically, VBE should be around 0.65-0.7V, and VCE should be around 1-2V. Additionally, ensure the collector current is within the recommended range, and the device is not operated in saturation or cutoff regions.
-
The recommended storage temperature for the MJE182G is -55°C to 150°C. It's essential to store the device within this temperature range to prevent damage or degradation.
-
While the MJE182G is primarily designed for linear applications, it can be used in switching applications with caution. However, it's essential to ensure the device is properly biased and operated within its recommended electrical and thermal characteristics to avoid overheating or damage.
-
The recommended soldering temperature for the MJE182G is 260°C (500°F) for a maximum of 10 seconds. It's essential to follow proper soldering techniques and temperature control to avoid damaging the device.