Datasheets
MJE13005G by:

4.0 A, 400 V NPN Bipolar Power Transistor, TO-220 3 LEAD STANDARD, 50-TUBE

Part Details for MJE13005G by onsemi

Results Overview of MJE13005G by onsemi

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MJE13005G Information

MJE13005G by onsemi is a Power Bipolar Transistor.
Power Bipolar Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for MJE13005G

Part # Distributor Description Stock Price Buy
DISTI # MJE13005G
Avnet Americas - Rail/Tube (Alt: MJE13005G) RoHS: Compliant Min Qty: 1550 Package Multiple: 50 Lead time: 111 Weeks, 0 Days Container: Tube 0
RFQ
Bristol Electronics   50
RFQ
ComSIT USA SWITCHMODE Series NPN Silicon Power Transistor Power Bipolar Transistor, 4A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin ECCN: EAR99 RoHS: Compliant Stock DE - 27
Stock ES - 8200
Stock US - 0
Stock MX - 0
Stock CN - 0
Stock HK - 0
RFQ
Vyrian Transistors 1554
RFQ

Part Details for MJE13005G

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MJE13005G Part Data Attributes

MJE13005G onsemi
Buy Now Datasheet
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MJE13005G onsemi 4.0 A, 400 V NPN Bipolar Power Transistor, TO-220 3 LEAD STANDARD, 50-TUBE
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer ONSEMI
Part Package Code TO-220 3 LEAD STANDARD
Package Description ROHS COMPLIANT, PLASTIC, TO-220, 3 PIN
Pin Count 3
Manufacturer Package Code 221A
Reach Compliance Code not_compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Factory Lead Time 111 Weeks
Samacsys Manufacturer onsemi
Additional Feature LEADFORM OPTIONS ARE AVAILABLE
Case Connection COLLECTOR
Collector Current-Max (IC) 4 A
Collector-Emitter Voltage-Max 400 V
Configuration SINGLE
DC Current Gain-Min (hFE) 8
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type NPN
Power Dissipation-Max (Abs) 75 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Tin (Sn)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 40
Transistor Application SWITCHING
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 4 MHz

MJE13005G Related Parts

MJE13005G Frequently Asked Questions (FAQ)

  • The maximum safe operating area (SOA) for the MJE13005G is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal and electrical characteristics. As a general guideline, the SOA is typically limited by the device's maximum junction temperature, collector-emitter voltage, and collector current.

  • To ensure the MJE13005G is properly biased for linear operation, you should ensure that the base-emitter voltage (VBE) is within the recommended range (typically around 0.7V), and the collector-emitter voltage (VCE) is sufficient to maintain a linear operating region. Additionally, the collector current should be limited to prevent thermal runaway.

  • For optimal thermal management, it is recommended to use a PCB layout that provides good thermal conductivity, such as a copper pour or a thermal pad. Additionally, ensure that the device is mounted on a heat sink or a thermal interface material (TIM) to dissipate heat efficiently.

  • While the MJE13005G is primarily designed for linear applications, it can be used in switching applications with caution. However, the device's switching characteristics, such as turn-on and turn-off times, may not be optimized for high-frequency switching. Additionally, the device's maximum collector current and voltage ratings should be carefully considered to prevent overheating and damage.

  • To prevent electrostatic discharge (ESD) damage, it is recommended to handle the MJE13005G with proper ESD protection measures, such as using an ESD wrist strap, anti-static bags, and ESD-safe work surfaces. Additionally, ensure that the device is properly grounded during handling and assembly.

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