Datasheets
MJD50G by:

1.0 A, 400 V High Voltage NPN Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 75-TUBE

Part Details for MJD50G by onsemi

Results Overview of MJD50G by onsemi

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

MJD50G Information

MJD50G by onsemi is a Power Bipolar Transistor.
Power Bipolar Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for MJD50G

Part # Distributor Description Stock Price Buy
DISTI # 38K5601
Newark Bipolar (Bjt) Single Transistor, General Purpose, Npn, 400 V, 10 Mhz, 1.56 W, 1 A, 10 Rohs Compliant: Yes |Onsemi MJD50G RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 286
  • 1 $1.0900
  • 10 $0.9690
  • 150 $0.4750
  • 525 $0.4450
  • 1,050 $0.4140
  • 2,550 $0.3740
  • 10,050 $0.3060
$0.3060 / $1.0900 Buy Now
DISTI # MJD50GOS-ND
DigiKey TRANS NPN 400V 1A DPAK Min Qty: 1 Lead time: 10 Weeks Container: Tube 1566
In Stock
  • 1 $1.3500
  • 75 $0.5921
  • 150 $0.5284
  • 525 $0.4375
  • 1,050 $0.3982
  • 2,025 $0.3666
  • 5,025 $0.3307
  • 10,050 $0.3083
$0.3083 / $1.3500 Buy Now
DISTI # MJD50G
Avnet Americas Trans GP BJT NPN 400V 1A 3-Pin(2+Tab) DPAK Rail - Rail/Tube (Alt: MJD50G) RoHS: Compliant Min Qty: 2100 Package Multiple: 75 Lead time: 10 Weeks, 0 Days Container: Tube 825 Factory Stock
  • 2,100 $0.3139
  • 2,250 $0.3022
  • 4,350 $0.2914
  • 10,500 $0.2814
  • 21,000 $0.2720
$0.2720 / $0.3139 Buy Now
DISTI # 863-MJD50G
Mouser Electronics Bipolar Transistors - BJT 1A 400V 15W NPN RoHS: Compliant 1756
  • 1 $1.1300
  • 10 $0.8660
  • 75 $0.5030
  • 525 $0.4290
  • 1,050 $0.3660
  • 4,800 $0.3300
$0.3300 / $1.1300 Buy Now
DISTI # V36:1790_07285153
Arrow Electronics Trans GP BJT NPN 400V 1A 1560mW 3-Pin(2+Tab) DPAK Tube Min Qty: 75 Package Multiple: 75 Lead time: 10 Weeks Date Code: 2351 Americas - 1679
  • 75 $0.4979
  • 150 $0.4930
  • 525 $0.3859
  • 1,050 $0.3573
  • 2,550 $0.2934
$0.2934 / $0.4979 Buy Now
DISTI # P40:2555_11857947
Arrow Electronics Trans GP BJT NPN 400V 1A 1560mW 3-Pin(2+Tab) DPAK Tube Min Qty: 1 Package Multiple: 1 Lead time: 98 Weeks Europe - 515
  • 1 $0.2977
  • 10 $0.2636
  • 150 $0.2610
  • 525 $0.2478
  • 1,050 $0.2428
  • 2,550 $0.2290
$0.2290 / $0.2977 Buy Now
DISTI # 70100135
RS Transistor, Bipolar, Si, NPN, High Voltage, Power, VCEO 400VDC, IC 1A, PD 15W, DPAK Min Qty: 1 Package Multiple: 1 Container: Bulk 0
  • 1 $0.6500
  • 10 $0.6200
  • 50 $0.5900
  • 100 $0.5600
$0.5600 / $0.6500 RFQ
Onlinecomponents.com 1.0 A, 400 V High Voltage NPN Bipolar Power Transistor RoHS: Compliant 0
  • 75 $0.3654
  • 525 $0.3353
  • 1,050 $0.3303
  • 2,550 $0.3179
  • 5,025 $0.3099
  • 7,500 $0.3052
  • 10,050 $0.3006
  • 15,000 $0.2961
$0.2961 / $0.3654 Buy Now
DISTI # 77382143
Verical Trans GP BJT NPN 400V 1A 1560mW 3-Pin(2+Tab) DPAK Tube Min Qty: 75 Package Multiple: 75 Date Code: 2351 Americas - 1650
  • 75 $0.4979
  • 150 $0.4930
  • 525 $0.3859
  • 1,050 $0.3573
  • 2,550 $0.2934
$0.2934 / $0.4979 Buy Now
DISTI # 87650515
Verical Trans GP BJT NPN 400V 1A 1560mW 3-Pin(2+Tab) DPAK Tube Min Qty: 150 Package Multiple: 75 Americas - 825
  • 150 $0.3079
$0.3079 Buy Now
Bristol Electronics   151
RFQ
Bristol Electronics   49
RFQ
ComSIT USA HIGH VOLTAGE POWER TRANSISTOR Power Bipolar Transistor, 1A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin ECCN: EAR99 RoHS: Compliant Stock DE - 23
Stock ES - 0
Stock US - 0
Stock MX - 0
Stock CN - 0
Stock HK - 0
RFQ
DISTI # MJD50G
IBS Electronics 1.0 A 400 V HIGH VOLTAGE NPN BIPOLAR POWER TRANSISTOR Min Qty: 2400 Package Multiple: 1 0
  • 300 $0.4290
  • 1,125 $0.4160
  • 1,875 $0.4160
  • 2,400 $0.4420
  • 3,750 $0.4030
$0.4030 / $0.4420 Buy Now
DISTI # MJD50G
Avnet Asia Trans GP BJT NPN 400V 1A 3-Pin(2+Tab) DPAK Rail (Alt: MJD50G) RoHS: Compliant Min Qty: 2325 Package Multiple: 75 Lead time: 10 Weeks, 0 Days 0
  • 2,325 $0.3221
  • 4,650 $0.3179
  • 6,975 $0.3139
  • 11,625 $0.3099
  • 23,250 $0.3022
  • 58,125 $0.2949
  • 116,250 $0.2880
$0.2880 / $0.3221 Buy Now
DISTI # MJD50G
Avnet Silica Trans GP BJT NPN 400V 1A 3Pin2Tab DPAK Rail (Alt: MJD50G) RoHS: Compliant Min Qty: 75 Package Multiple: 75 Lead time: 11 Weeks, 0 Days Silica - 750
Buy Now
Cytech Systems Limited TRANS NPN 400V 1A DPAK 75
RFQ
DISTI # MJD50G
EBV Elektronik Trans GP BJT NPN 400V 1A 3Pin2Tab DPAK Rail (Alt: MJD50G) RoHS: Compliant Min Qty: 75 Package Multiple: 75 Lead time: 12 Weeks, 0 Days EBV - 1125
Buy Now
New Advantage Corporation MJD Series 400 V 1 A NPN Surface Mount Power Transistor - TO-252-3 RoHS: Compliant Min Qty: 1 Package Multiple: 75 900
  • 150 $1.4500
  • 900 $1.3400
$1.3400 / $1.4500 Buy Now
Vyrian Transistors 1142
RFQ

Part Details for MJD50G

MJD50G Part Data Attributes

MJD50G onsemi
Buy Now Datasheet
Compare Parts:
MJD50G onsemi 1.0 A, 400 V High Voltage NPN Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 75-TUBE
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ONSEMI
Part Package Code DPAK (SINGLE GAUGE) TO-252
Package Description DPAK-3
Pin Count 3
Manufacturer Package Code 369C
Reach Compliance Code not_compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Factory Lead Time 10 Weeks
Samacsys Manufacturer onsemi
Case Connection COLLECTOR
Collector Current-Max (IC) 1 A
Collector-Emitter Voltage-Max 400 V
Configuration SINGLE
DC Current Gain-Min (hFE) 10
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type NPN
Power Dissipation-Max (Abs) 15 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn) - annealed
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 10 MHz

Alternate Parts for MJD50G

This table gives cross-reference parts and alternative options found for MJD50G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MJD50G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
CJD50BKTIN/LEAD Central Semiconductor Corp Check for Price Transistor MJD50G vs CJD50BKTIN/LEAD
CJD50TR13TIN/LEAD Central Semiconductor Corp Check for Price Transistor MJD50G vs CJD50TR13TIN/LEAD
MJD50 STMicroelectronics Check for Price 1A, 400V, NPN, Si, POWER TRANSISTOR, TO-252, DPAK-3 MJD50G vs MJD50
Part Number Manufacturer Composite Price Description Compare
MJD50T4G onsemi $0.3833 1.0 A, 400 V High Voltage NPN Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 2500-REEL MJD50G vs MJD50T4G
KSH50 Fairchild Semiconductor Corporation Check for Price Power Bipolar Transistor, 1A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, Plastic/Epoxy, 2 Pin, DPAK-3 MJD50G vs KSH50

MJD50G Related Parts

MJD50G Frequently Asked Questions (FAQ)

  • The maximum SOA for the MJD50G is typically defined by the voltage and current ratings, but it's recommended to consult the onsemi application note AND8193/D for detailed SOA information.

  • To ensure proper biasing, follow the recommended biasing circuit and component values provided in the datasheet, and consider using a voltage regulator to maintain a stable voltage supply.

  • The MJD50G has a high power dissipation capability, so it's essential to ensure proper heat sinking and thermal management. Use a heat sink with a thermal resistance of ≤ 1°C/W, and consider using a thermal interface material to minimize thermal resistance.

  • Yes, the MJD50G can be used in switching applications, but it's essential to consider the transistor's switching characteristics, such as turn-on and turn-off times, and ensure that the circuit is designed to minimize switching losses.

  • To protect the MJD50G from ESD, follow proper handling and storage procedures, use ESD-protective packaging, and consider adding ESD protection devices, such as TVS diodes, in the circuit.

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