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1.0 A, 400 V High Voltage NPN Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 75-TUBE
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
MJD50G by onsemi is a Power Bipolar Transistor.
Power Bipolar Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
38K5601
|
Newark | Bipolar (Bjt) Single Transistor, General Purpose, Npn, 400 V, 10 Mhz, 1.56 W, 1 A, 10 Rohs Compliant: Yes |Onsemi MJD50G RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 286 |
|
$0.3060 / $1.0900 | Buy Now |
DISTI #
MJD50GOS-ND
|
DigiKey | TRANS NPN 400V 1A DPAK Min Qty: 1 Lead time: 10 Weeks Container: Tube |
1566 In Stock |
|
$0.3083 / $1.3500 | Buy Now |
DISTI #
MJD50G
|
Avnet Americas | Trans GP BJT NPN 400V 1A 3-Pin(2+Tab) DPAK Rail - Rail/Tube (Alt: MJD50G) RoHS: Compliant Min Qty: 2100 Package Multiple: 75 Lead time: 10 Weeks, 0 Days Container: Tube | 825 Factory Stock |
|
$0.2720 / $0.3139 | Buy Now |
DISTI #
863-MJD50G
|
Mouser Electronics | Bipolar Transistors - BJT 1A 400V 15W NPN RoHS: Compliant | 1756 |
|
$0.3300 / $1.1300 | Buy Now |
DISTI #
V36:1790_07285153
|
Arrow Electronics | Trans GP BJT NPN 400V 1A 1560mW 3-Pin(2+Tab) DPAK Tube Min Qty: 75 Package Multiple: 75 Lead time: 10 Weeks Date Code: 2351 | Americas - 1679 |
|
$0.2934 / $0.4979 | Buy Now |
DISTI #
P40:2555_11857947
|
Arrow Electronics | Trans GP BJT NPN 400V 1A 1560mW 3-Pin(2+Tab) DPAK Tube Min Qty: 1 Package Multiple: 1 Lead time: 98 Weeks | Europe - 515 |
|
$0.2290 / $0.2977 | Buy Now |
DISTI #
70100135
|
RS | Transistor, Bipolar, Si, NPN, High Voltage, Power, VCEO 400VDC, IC 1A, PD 15W, DPAK Min Qty: 1 Package Multiple: 1 Container: Bulk | 0 |
|
$0.5600 / $0.6500 | RFQ |
|
Onlinecomponents.com | 1.0 A, 400 V High Voltage NPN Bipolar Power Transistor RoHS: Compliant | 0 |
|
$0.2961 / $0.3654 | Buy Now |
DISTI #
77382143
|
Verical | Trans GP BJT NPN 400V 1A 1560mW 3-Pin(2+Tab) DPAK Tube Min Qty: 75 Package Multiple: 75 Date Code: 2351 | Americas - 1650 |
|
$0.2934 / $0.4979 | Buy Now |
DISTI #
87650515
|
Verical | Trans GP BJT NPN 400V 1A 1560mW 3-Pin(2+Tab) DPAK Tube Min Qty: 150 Package Multiple: 75 | Americas - 825 |
|
$0.3079 | Buy Now |
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MJD50G
onsemi
Buy Now
Datasheet
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Compare Parts:
MJD50G
onsemi
1.0 A, 400 V High Voltage NPN Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 75-TUBE
|
Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | ONSEMI | |
Part Package Code | DPAK (SINGLE GAUGE) TO-252 | |
Package Description | DPAK-3 | |
Pin Count | 3 | |
Manufacturer Package Code | 369C | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Factory Lead Time | 10 Weeks | |
Samacsys Manufacturer | onsemi | |
Case Connection | COLLECTOR | |
Collector Current-Max (IC) | 1 A | |
Collector-Emitter Voltage-Max | 400 V | |
Configuration | SINGLE | |
DC Current Gain-Min (hFE) | 10 | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | NPN | |
Power Dissipation-Max (Abs) | 15 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) - annealed | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON | |
Transition Frequency-Nom (fT) | 10 MHz |
This table gives cross-reference parts and alternative options found for MJD50G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MJD50G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
---|---|---|---|---|
CJD50BKTIN/LEAD | Central Semiconductor Corp | Check for Price | Transistor | MJD50G vs CJD50BKTIN/LEAD |
CJD50TR13TIN/LEAD | Central Semiconductor Corp | Check for Price | Transistor | MJD50G vs CJD50TR13TIN/LEAD |
MJD50 | STMicroelectronics | Check for Price | 1A, 400V, NPN, Si, POWER TRANSISTOR, TO-252, DPAK-3 | MJD50G vs MJD50 |
The maximum SOA for the MJD50G is typically defined by the voltage and current ratings, but it's recommended to consult the onsemi application note AND8193/D for detailed SOA information.
To ensure proper biasing, follow the recommended biasing circuit and component values provided in the datasheet, and consider using a voltage regulator to maintain a stable voltage supply.
The MJD50G has a high power dissipation capability, so it's essential to ensure proper heat sinking and thermal management. Use a heat sink with a thermal resistance of ≤ 1°C/W, and consider using a thermal interface material to minimize thermal resistance.
Yes, the MJD50G can be used in switching applications, but it's essential to consider the transistor's switching characteristics, such as turn-on and turn-off times, and ensure that the circuit is designed to minimize switching losses.
To protect the MJD50G from ESD, follow proper handling and storage procedures, use ESD-protective packaging, and consider adding ESD protection devices, such as TVS diodes, in the circuit.