Datasheets
MJD44H11TM by:

Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, Plastic/Epoxy, 2 Pin, DPAK-3

Part Details for MJD44H11TM by Fairchild Semiconductor Corporation

Results Overview of MJD44H11TM by Fairchild Semiconductor Corporation

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

MJD44H11TM Information

MJD44H11TM by Fairchild Semiconductor Corporation is a Power Bipolar Transistor.
Power Bipolar Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for MJD44H11TM

Part # Distributor Description Stock Price Buy
Bristol Electronics   30
RFQ
Quest Components 8 A, 80 V, NPN, SI, POWER TRANSISTOR, TO-252 14
  • 1 $0.4389
  • 12 $0.3658
$0.3658 / $0.4389 Buy Now
Win Source Electronics TRANS NPN 80V 8A DPAK 10200
  • 185 $0.3172
  • 445 $0.2603
  • 690 $0.2522
  • 950 $0.2441
  • 1,225 $0.2359
  • 1,640 $0.2115
$0.2115 / $0.3172 Buy Now

Part Details for MJD44H11TM

MJD44H11TM CAD Models

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MJD44H11TM Part Data Attributes

MJD44H11TM Fairchild Semiconductor Corporation
Buy Now Datasheet
Compare Parts:
MJD44H11TM Fairchild Semiconductor Corporation Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, Plastic/Epoxy, 2 Pin, DPAK-3
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Part Package Code DPAK
Package Description DPAK-3
Pin Count 3
Manufacturer Package Code 3LD, TO-252, NOT COMPLIANT TO JEDEC TO-252 VAR. AB, SURFACE MOUNT (DPAK)
Reach Compliance Code not_compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Collector Current-Max (IC) 8 A
Collector-Emitter Voltage-Max 80 V
Configuration SINGLE
DC Current Gain-Min (hFE) 40
JEDEC-95 Code TO-252
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type NPN
Power Dissipation-Max (Abs) 20 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 50 MHz

Alternate Parts for MJD44H11TM

This table gives cross-reference parts and alternative options found for MJD44H11TM. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MJD44H11TM, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
MJD44H11RL onsemi Check for Price 8 A, 80 V NPN Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 1800-REEL MJD44H11TM vs MJD44H11RL
MJD44H11T4 Motorola Semiconductor Products Check for Price Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin MJD44H11TM vs MJD44H11T4
MJD44H11 Motorola Semiconductor Products Check for Price Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin MJD44H11TM vs MJD44H11
MJD44H11T4 STMicroelectronics $0.3348 Low voltage NPN power transistor MJD44H11TM vs MJD44H11T4
Part Number Manufacturer Composite Price Description Compare
MJD44H11 onsemi Check for Price 8 A, 80 V NPN Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 75-TUBE MJD44H11TM vs MJD44H11
MJD44H11T5 onsemi Check for Price 8 A, 80 V NPN Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 2500-REEL MJD44H11TM vs MJD44H11T5
MJD44H11 Motorola Mobility LLC Check for Price 8A, 80V, NPN, Si, POWER TRANSISTOR MJD44H11TM vs MJD44H11
CJD44H11 Central Semiconductor Corp Check for Price Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin, DPAK-3 MJD44H11TM vs CJD44H11
KSH44H11TM onsemi Check for Price NPN Epitaxial Silicon Transistor, DPAK-3, 2500-REEL MJD44H11TM vs KSH44H11TM
KSH44H11-TF Samsung Semiconductor Check for Price Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin MJD44H11TM vs KSH44H11-TF
MJD44H11 STMicroelectronics Check for Price 8A, 80V, NPN, Si, POWER TRANSISTOR, TO-252, PLASTIC, DPAK-3 MJD44H11TM vs MJD44H11
MJD44H11TF_NL Fairchild Semiconductor Corporation Check for Price Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, Plastic/Epoxy, 2 Pin, LEAD FREE, DPAK-3 MJD44H11TM vs MJD44H11TF_NL
MJD44H11 Taitron Components Inc Check for Price Power Bipolar Transistor, MJD44H11TM vs MJD44H11
HJ44H11L-TN3-R Unisonic Technologies Co Ltd Check for Price Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, Plastic/Epoxy, 2 Pin, LEAD FREE PACKAGE-3 MJD44H11TM vs HJ44H11L-TN3-R

MJD44H11TM Related Parts

MJD44H11TM Frequently Asked Questions (FAQ)

  • The maximum safe operating area (SOA) for the MJD44H11TM is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal resistance, power dissipation, and voltage ratings. As a general guideline, the SOA is typically limited by the device's thermal capabilities, and it's recommended to operate the device within the specified thermal limits to ensure reliability.

  • To ensure proper biasing, follow the recommended operating conditions and biasing schemes outlined in the datasheet. Additionally, consider the device's current gain, base-emitter voltage, and collector-emitter voltage to optimize performance. It's also essential to consider the load impedance, supply voltage, and temperature when designing the biasing circuit.

  • Thermal management is crucial for the MJD44H11TM. Ensure proper heat sinking, and consider the device's thermal resistance, junction temperature, and power dissipation. Use thermal interface materials, heat sinks, and fans as needed to maintain a safe operating temperature. Monitor the device's temperature and adjust the thermal design accordingly to prevent overheating.

  • To protect the MJD44H11TM from ESD, follow proper handling and storage procedures. Use anti-static wrist straps, mats, and packaging materials. Ensure that the device is properly grounded during handling and assembly. Implement ESD protection circuits, such as TVS diodes or ESD protection arrays, in the design to prevent damage from electrostatic discharge.

  • The reliability and lifespan of the MJD44H11TM depend on various factors, including operating conditions, temperature, and usage patterns. Fairchild Semiconductor Corporation provides reliability data and guidelines in the datasheet. Additionally, consider industry standards, such as those from JEDEC, to estimate the device's lifespan and reliability.

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