Part Details for MJD44H11TF by onsemi
Results Overview of MJD44H11TF by onsemi
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (4 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
MJD44H11TF Information
MJD44H11TF by onsemi is a Power Bipolar Transistor.
Power Bipolar Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for MJD44H11TF
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
MJD44H11TF
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Avnet Silica | Trans GP BJT NPN 80V 8A 3Pin2Tab DPAK TR (Alt: MJD44H11TF) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 143 Weeks, 0 Days | Silica - 0 |
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Buy Now | |
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DISTI #
MJD44H11TF
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EBV Elektronik | Trans GP BJT NPN 80V 8A 3Pin2Tab DPAK TR (Alt: MJD44H11TF) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 143 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for MJD44H11TF
MJD44H11TF CAD Models
MJD44H11TF Part Data Attributes
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MJD44H11TF
onsemi
Buy Now
Datasheet
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MJD44H11TF
onsemi
8 A, 80 V NPN Power Bipolar Junction Transistor, DPAK-3, 2000-REEL
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | ONSEMI | |
| Part Package Code | DPAK-3 | |
| Package Description | DPAK-3 | |
| Manufacturer Package Code | 369AK | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | onsemi | |
| Collector Current-Max (IC) | 8 A | |
| Collector-Emitter Voltage-Max | 80 V | |
| Configuration | SINGLE | |
| DC Current Gain-Min (hFE) | 40 | |
| JEDEC-95 Code | TO-252 | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | NPN | |
| Power Dissipation-Max (Abs) | 20 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Transition Frequency-Nom (fT) | 50 MHz |
Alternate Parts for MJD44H11TF
This table gives cross-reference parts and alternative options found for MJD44H11TF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MJD44H11TF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| MJD44H11RL | onsemi | Check for Price | 8 A, 80 V NPN Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 1800-REEL | MJD44H11TF vs MJD44H11RL |
| MJD44H11T4 | Motorola Semiconductor Products | Check for Price | Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin | MJD44H11TF vs MJD44H11T4 |
| MJD44H11 | Motorola Semiconductor Products | Check for Price | Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin | MJD44H11TF vs MJD44H11 |
| MJD44H11T4 | STMicroelectronics | $0.3348 | Low voltage NPN power transistor | MJD44H11TF vs MJD44H11T4 |
MJD44H11TF Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the MJD44H11TF is -55°C to 150°C.
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To ensure proper biasing, the MJD44H11TF requires a minimum of 10mA of collector current and a maximum of 1.5A of collector current. Additionally, the base-emitter voltage should be between 0.65V and 0.85V.
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To minimize thermal resistance, it is recommended to use a PCB layout with a large copper area connected to the tab of the MJD44H11TF. This will help to dissipate heat efficiently.
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Yes, the MJD44H11TF can be used in high-frequency applications up to 100 MHz. However, it is recommended to use a ferrite bead or a resistor in series with the base to prevent oscillation.
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To protect the MJD44H11TF from ESD, it is recommended to use an ESD protection device, such as a TVS diode, in parallel with the transistor. Additionally, handling the device by the body or using an anti-static wrist strap can also prevent ESD damage.