Datasheets
MJD44H11TF by:

Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, Plastic/Epoxy, 2 Pin, DPAK-3

Part Details for MJD44H11TF by Fairchild Semiconductor Corporation

Results Overview of MJD44H11TF by Fairchild Semiconductor Corporation

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

MJD44H11TF Information

MJD44H11TF by Fairchild Semiconductor Corporation is a Power Bipolar Transistor.
Power Bipolar Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for MJD44H11TF

Part # Distributor Description Stock Price Buy
Bristol Electronics   3253
RFQ
Bristol Electronics   397
RFQ
Chip 1 Exchange INSTOCK 11210
RFQ
Chip 1 Exchange INSTOCK 10900
RFQ

Part Details for MJD44H11TF

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MJD44H11TF Part Data Attributes

MJD44H11TF Fairchild Semiconductor Corporation
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MJD44H11TF Fairchild Semiconductor Corporation Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, Plastic/Epoxy, 2 Pin, DPAK-3
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Part Package Code DPAK
Package Description DPAK-3
Pin Count 3
Manufacturer Package Code 3LD, TO-252, NOT COMPLIANT TO JEDEC TO-252 VAR. AB, SURFACE MOUNT (DPAK)
Reach Compliance Code not_compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Collector Current-Max (IC) 8 A
Collector-Emitter Voltage-Max 80 V
Configuration SINGLE
DC Current Gain-Min (hFE) 40
JEDEC-95 Code TO-252
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type NPN
Power Dissipation-Max (Abs) 20 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 50 MHz

Alternate Parts for MJD44H11TF

This table gives cross-reference parts and alternative options found for MJD44H11TF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MJD44H11TF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
MJD44H11RL onsemi Check for Price 8 A, 80 V NPN Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 1800-REEL MJD44H11TF vs MJD44H11RL
MJD44H11T4 Motorola Semiconductor Products Check for Price Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin MJD44H11TF vs MJD44H11T4
MJD44H11 Motorola Semiconductor Products Check for Price Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin MJD44H11TF vs MJD44H11
MJD44H11T4 STMicroelectronics $0.3348 Low voltage NPN power transistor MJD44H11TF vs MJD44H11T4
Part Number Manufacturer Composite Price Description Compare
MJD44H11 onsemi Check for Price 8 A, 80 V NPN Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 75-TUBE MJD44H11TF vs MJD44H11
MJD44H11T5 onsemi Check for Price 8 A, 80 V NPN Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 2500-REEL MJD44H11TF vs MJD44H11T5
MJD44H11 Motorola Mobility LLC Check for Price 8A, 80V, NPN, Si, POWER TRANSISTOR MJD44H11TF vs MJD44H11
CJD44H11 Central Semiconductor Corp Check for Price Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin, DPAK-3 MJD44H11TF vs CJD44H11
KSH44H11TM onsemi Check for Price NPN Epitaxial Silicon Transistor, DPAK-3, 2500-REEL MJD44H11TF vs KSH44H11TM
KSH44H11-TF Samsung Semiconductor Check for Price Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin MJD44H11TF vs KSH44H11-TF
MJD44H11 STMicroelectronics Check for Price 8A, 80V, NPN, Si, POWER TRANSISTOR, TO-252, PLASTIC, DPAK-3 MJD44H11TF vs MJD44H11
MJD44H11TF_NL Fairchild Semiconductor Corporation Check for Price Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, Plastic/Epoxy, 2 Pin, LEAD FREE, DPAK-3 MJD44H11TF vs MJD44H11TF_NL
MJD44H11 Taitron Components Inc Check for Price Power Bipolar Transistor, MJD44H11TF vs MJD44H11
HJ44H11L-TN3-R Unisonic Technologies Co Ltd Check for Price Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, Plastic/Epoxy, 2 Pin, LEAD FREE PACKAGE-3 MJD44H11TF vs HJ44H11L-TN3-R

MJD44H11TF Related Parts

MJD44H11TF Frequently Asked Questions (FAQ)

  • The maximum safe operating area (SOA) for the MJD44H11TF is not explicitly stated in the datasheet. However, Fairchild Semiconductor recommends following the SOA curves provided in the datasheet to ensure safe operation. Additionally, it's essential to consider the device's thermal limitations, voltage, and current ratings to prevent damage.

  • Proper thermal management is crucial for the MJD44H11TF. Ensure good heat dissipation by using a heat sink with a thermal resistance of less than 10°C/W. Also, maintain a maximum junction temperature (Tj) of 150°C and consider the device's power dissipation (PD) rating. A thermal interface material (TIM) can also be used to improve heat transfer between the device and heat sink.

  • For optimal performance and thermal management, follow these PCB layout guidelines: keep the transistor close to the heat sink, use a solid copper plane for the collector pin, and minimize the distance between the transistor and the heat sink. Also, ensure good clearance around the device to prevent thermal coupling with other components.

  • Yes, the MJD44H11TF can be used in switching applications, but it's essential to consider the device's switching characteristics, such as turn-on and turn-off times, and ensure that the switching frequency is within the recommended range. Additionally, be mindful of the device's power dissipation and thermal limitations to prevent overheating.

  • To select the correct base resistor value, consider the device's current gain (hFE), the required base current, and the voltage supply. A general rule of thumb is to choose a base resistor value that ensures a base current of around 1/10th of the collector current. However, consult the datasheet and application notes for more specific guidance.

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