Part Details for MJD44H11TF by Fairchild Semiconductor Corporation
Results Overview of MJD44H11TF by Fairchild Semiconductor Corporation
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (4 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
MJD44H11TF Information
MJD44H11TF by Fairchild Semiconductor Corporation is a Power Bipolar Transistor.
Power Bipolar Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for MJD44H11TF
Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 3253 |
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RFQ | ||
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Bristol Electronics | 397 |
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RFQ | ||
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Chip 1 Exchange | INSTOCK | 11210 |
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RFQ | |
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Chip 1 Exchange | INSTOCK | 10900 |
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RFQ |
Part Details for MJD44H11TF
MJD44H11TF CAD Models
MJD44H11TF Part Data Attributes
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MJD44H11TF
Fairchild Semiconductor Corporation
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Datasheet
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MJD44H11TF
Fairchild Semiconductor Corporation
Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, Plastic/Epoxy, 2 Pin, DPAK-3
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
Part Package Code | DPAK | |
Package Description | DPAK-3 | |
Pin Count | 3 | |
Manufacturer Package Code | 3LD, TO-252, NOT COMPLIANT TO JEDEC TO-252 VAR. AB, SURFACE MOUNT (DPAK) | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Collector Current-Max (IC) | 8 A | |
Collector-Emitter Voltage-Max | 80 V | |
Configuration | SINGLE | |
DC Current Gain-Min (hFE) | 40 | |
JEDEC-95 Code | TO-252 | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | NPN | |
Power Dissipation-Max (Abs) | 20 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON | |
Transition Frequency-Nom (fT) | 50 MHz |
Alternate Parts for MJD44H11TF
This table gives cross-reference parts and alternative options found for MJD44H11TF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MJD44H11TF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
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MJD44H11RL | onsemi | Check for Price | 8 A, 80 V NPN Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 1800-REEL | MJD44H11TF vs MJD44H11RL |
MJD44H11T4 | Motorola Semiconductor Products | Check for Price | Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin | MJD44H11TF vs MJD44H11T4 |
MJD44H11 | Motorola Semiconductor Products | Check for Price | Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin | MJD44H11TF vs MJD44H11 |
MJD44H11T4 | STMicroelectronics | $0.3348 | Low voltage NPN power transistor | MJD44H11TF vs MJD44H11T4 |
MJD44H11TF Frequently Asked Questions (FAQ)
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The maximum safe operating area (SOA) for the MJD44H11TF is not explicitly stated in the datasheet. However, Fairchild Semiconductor recommends following the SOA curves provided in the datasheet to ensure safe operation. Additionally, it's essential to consider the device's thermal limitations, voltage, and current ratings to prevent damage.
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Proper thermal management is crucial for the MJD44H11TF. Ensure good heat dissipation by using a heat sink with a thermal resistance of less than 10°C/W. Also, maintain a maximum junction temperature (Tj) of 150°C and consider the device's power dissipation (PD) rating. A thermal interface material (TIM) can also be used to improve heat transfer between the device and heat sink.
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For optimal performance and thermal management, follow these PCB layout guidelines: keep the transistor close to the heat sink, use a solid copper plane for the collector pin, and minimize the distance between the transistor and the heat sink. Also, ensure good clearance around the device to prevent thermal coupling with other components.
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Yes, the MJD44H11TF can be used in switching applications, but it's essential to consider the device's switching characteristics, such as turn-on and turn-off times, and ensure that the switching frequency is within the recommended range. Additionally, be mindful of the device's power dissipation and thermal limitations to prevent overheating.
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To select the correct base resistor value, consider the device's current gain (hFE), the required base current, and the voltage supply. A general rule of thumb is to choose a base resistor value that ensures a base current of around 1/10th of the collector current. However, consult the datasheet and application notes for more specific guidance.