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Part Details for MJD44H11T4G by onsemi
Results Overview of MJD44H11T4G by onsemi
- Distributor Offerings: (33 listings)
- Number of FFF Equivalents: (5 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Industrial Automation
Energy and Power Systems
Renewable Energy
Motor control systems
MJD44H11T4G Information
MJD44H11T4G by onsemi is a Power Bipolar Transistor.
Power Bipolar Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for MJD44H11T4G
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
98H0737
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Newark | Bipolar Transistor, Npn, 80V, Transistor Polarity:Npn, Collector Emitter Voltage Max:80V, Continuous Collector Current:8A, Power Dissipation:20W, Transistor Mounting:Surface Mount, No. Of Pins:3Pins, Transition Frequency:85Hz Rohs Compliant: Yes |Onsemi MJD44H11T4G RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 2404 |
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$0.2950 / $0.3490 | Buy Now |
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DISTI #
81Y6797
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Newark | Transistor, Bipol, Npn, 80V, To-252-3, Transistor Polarity:Npn, Collector Emitter Voltage V(Br)Ceo:80V, Transition Frequency Ft:85Mhz, Power Dissipation Pd:20W, Dc Collector Current:8A, Dc Current Gain Hfe:40Hfe, Transistor Case Rohs Compliant: Yes |Onsemi MJD44H11T4G RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 445 |
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$0.3250 / $0.3540 | Buy Now |
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DISTI #
31Y2633
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Newark | Bipolar (Bjt) Single Transistor, Audio, Npn, 80 V, 85 Hz, 20 Mw, 8 A, 60 Rohs Compliant: Yes |Onsemi MJD44H11T4G RoHS: Compliant Min Qty: 2500 Package Multiple: 1 Date Code: 1 Container: Reel | 0 |
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$0.3750 / $0.3890 | Buy Now |
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DISTI #
MJD44H11T4GOSCT-ND
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DigiKey | TRANS NPN 80V 8A DPAK Min Qty: 1 Lead time: 10 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
25786 In Stock |
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$0.2395 / $1.1400 | Buy Now |
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DISTI #
98H0737
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Avnet Americas | Single Bipolar Transistor, NPN, 80 V, 8 A, 20 W, TO-252 (DPAK), 3 Pins, Surface Mount - Product that comes on tape, but is not reeled (Alt: 98H0737) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 14 Weeks, 4 Days Container: Ammo Pack | 2404 Partner Stock |
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$0.4450 / $0.8830 | Buy Now |
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DISTI #
81Y6797
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Avnet Americas | Single Bipolar Transistor, NPN, 80 V, 8 A, 20 W, TO-252 (DPAK), 3 Pins, Surface Mount - Product that comes on tape, but is not reeled (Alt: 81Y6797) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 21 Weeks, 4 Days Container: Ammo Pack | 445 Partner Stock |
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$0.5240 / $0.9620 | Buy Now |
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DISTI #
863-MJD44H11T4G
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Mouser Electronics | Bipolar Transistors - BJT 8A 80V 20W NPN RoHS: Compliant | 39099 |
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$0.2520 / $0.9600 | Buy Now |
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DISTI #
V36:1790_07295974
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Arrow Electronics | Trans GP BJT NPN 80V 8A 1750mW 3-Pin(2+Tab) DPAK T/R Min Qty: 2500 Package Multiple: 2500 Lead time: 10 Weeks Date Code: 2425 | Americas - 237500 |
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$0.2240 / $0.2374 | Buy Now |
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DISTI #
E02:0323_00077835
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Arrow Electronics | Trans GP BJT NPN 80V 8A 1750mW 3-Pin(2+Tab) DPAK T/R Min Qty: 2500 Package Multiple: 2500 Lead time: 10 Weeks | Europe - 155000 |
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$0.2559 / $0.2712 | Buy Now |
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DISTI #
E21:3489_00077835
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Arrow Electronics | Trans GP BJT NPN 80V 8A 1750mW 3-Pin(2+Tab) DPAK T/R Min Qty: 1 Package Multiple: 1 Lead time: 10 Weeks Date Code: 2442 | Europe - 618 |
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$0.2241 / $0.9316 | Buy Now |
Part Details for MJD44H11T4G
MJD44H11T4G CAD Models
MJD44H11T4G Part Data Attributes
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MJD44H11T4G
onsemi
Buy Now
Datasheet
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Compare Parts:
MJD44H11T4G
onsemi
8 A, 80 V NPN Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 2500-REEL
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ONSEMI | |
| Part Package Code | DPAK (SINGLE GAUGE) TO-252 | |
| Package Description | DPAK-3 | |
| Pin Count | 3 | |
| Manufacturer Package Code | 369C | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 14 Weeks, 4 Days | |
| Samacsys Manufacturer | onsemi | |
| Case Connection | COLLECTOR | |
| Collector Current-Max (IC) | 8 A | |
| Collector-Emitter Voltage-Max | 80 V | |
| Configuration | SINGLE | |
| DC Current Gain-Min (hFE) | 40 | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | NPN | |
| Power Dissipation-Max (Abs) | 20 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Transition Frequency-Nom (fT) | 85 MHz |
Alternate Parts for MJD44H11T4G
This table gives cross-reference parts and alternative options found for MJD44H11T4G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MJD44H11T4G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| MJD44H11G | onsemi | $0.4058 | 8 A, 80 V NPN Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 75-TUBE | MJD44H11T4G vs MJD44H11G |
| KSH44H11TF | onsemi | Check for Price | NPN Epitaxial Silicon Transistor, DPAK-3, 2000-REEL | MJD44H11T4G vs KSH44H11TF |
| MJD44H11T5G | onsemi | Check for Price | 8 A, 80 V NPN Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 2500-REEL | MJD44H11T4G vs MJD44H11T5G |
| MJD44H11T4 | onsemi | Check for Price | 8 A, 80 V NPN Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 2500-REEL | MJD44H11T4G vs MJD44H11T4 |
| MJD44H11 | Motorola Semiconductor Products | Check for Price | Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin | MJD44H11T4G vs MJD44H11 |
MJD44H11T4G Frequently Asked Questions (FAQ)
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A thermal pad on the bottom of the package should be connected to a large copper area on the PCB to dissipate heat efficiently. A minimum of 2oz copper thickness is recommended.
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Ensure that the device is operated within the recommended junction temperature range (TJ) of -40°C to 150°C. Implement proper thermal management, and consider using a heat sink if necessary.
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The MJD44H11T4G has built-in ESD protection, but it's still recommended to follow proper ESD handling procedures during assembly and storage. Use an ESD wrist strap or mat, and store the devices in anti-static packaging.
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Yes, the MJD44H11T4G is AEC-Q101 qualified, making it suitable for automotive and high-reliability applications. However, ensure that you follow the recommended operating conditions and design guidelines.
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Consult the onsemi application note AN10495 for troubleshooting guidelines. Perform a thorough analysis of the circuit design, PCB layout, and component selection to identify potential issues.