Part Details for MJD44H11 by Motorola Semiconductor Products
Results Overview of MJD44H11 by Motorola Semiconductor Products
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (4 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
MJD44H11 Information
MJD44H11 by Motorola Semiconductor Products is a Power Bipolar Transistor.
Power Bipolar Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for MJD44H11
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 59 |
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RFQ | ||
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Quest Components | TRANS POWER NPN 8A 80V DPAK | 1275 |
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$0.2366 / $0.9100 | Buy Now |
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Quest Components | TRANS POWER NPN 8A 80V DPAK | 3 |
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$0.5400 | Buy Now |
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ComSIT USA | Electronic Component RoHS: Not Compliant |
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RFQ |
Part Details for MJD44H11
MJD44H11 CAD Models
MJD44H11 Part Data Attributes
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MJD44H11
Motorola Semiconductor Products
Buy Now
Datasheet
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Compare Parts:
MJD44H11
Motorola Semiconductor Products
Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin
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| Rohs Code | No | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | MOTOROLA INC | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.75 | |
| Case Connection | COLLECTOR | |
| Collector Current-Max (IC) | 8 A | |
| Collector-Emitter Voltage-Max | 80 V | |
| Configuration | SINGLE | |
| DC Current Gain-Min (hFE) | 40 | |
| JESD-30 Code | R-PDSO-G2 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | NPN | |
| Power Dissipation Ambient-Max | 20 W | |
| Power Dissipation-Max (Abs) | 20 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Transition Frequency-Nom (fT) | 50 MHz | |
| Turn-off Time-Max (toff) | 640 ns | |
| VCEsat-Max | 1 V |
Alternate Parts for MJD44H11
This table gives cross-reference parts and alternative options found for MJD44H11. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MJD44H11, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| MJD44H11RL | onsemi | Check for Price | 8 A, 80 V NPN Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 1800-REEL | MJD44H11 vs MJD44H11RL |
| MJD44H11T4 | Motorola Semiconductor Products | Check for Price | Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin | MJD44H11 vs MJD44H11T4 |
| MJD44H11T4 | STMicroelectronics | $0.3348 | Low voltage NPN power transistor | MJD44H11 vs MJD44H11T4 |
| MJD44H11T4G | onsemi | $0.3688 | 8 A, 80 V NPN Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 2500-REEL | MJD44H11 vs MJD44H11T4G |
MJD44H11 Frequently Asked Questions (FAQ)
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The maximum safe operating area (SOA) for the MJD44H11 is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal and electrical characteristics. As a general guideline, the SOA is typically defined by the maximum voltage and current ratings, as well as the thermal resistance and junction temperature.
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To ensure the MJD44H11 is properly biased for linear operation, you should follow the recommended biasing conditions outlined in the datasheet. This typically involves setting the base-emitter voltage (VBE) and collector-emitter voltage (VCE) within the specified ranges, and ensuring the device is operated within its recommended current and power dissipation limits.
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The recommended heatsink design for the MJD44H11 depends on the specific application and operating conditions. However, as a general guideline, a heatsink with a thermal resistance of less than 10°C/W is recommended. The heatsink should also be designed to provide good thermal contact with the device, and should be mounted using a suitable thermal interface material.
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While the MJD44H11 is primarily designed for linear applications, it can be used in switching applications with proper design considerations. However, the device's switching characteristics, such as its turn-on and turn-off times, may not be as optimized as those of dedicated switching transistors. Careful evaluation of the device's switching performance and thermal management is necessary to ensure reliable operation.
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To protect the MJD44H11 from electrostatic discharge (ESD), follow proper handling and storage procedures, such as using anti-static wrist straps, mats, and packaging materials. Additionally, ensure that the device is properly connected to a ground plane or other ESD protection circuitry in the application circuit.