Part Details for MJD44H11-1G by onsemi
Results Overview of MJD44H11-1G by onsemi
- Distributor Offerings: (12 listings)
- Number of FFF Equivalents: (3 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
MJD44H11-1G Information
MJD44H11-1G by onsemi is a Power Bipolar Transistor.
Power Bipolar Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for MJD44H11-1G
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
30AC9900
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Newark | Transistor, Npn, 80V, 8A, To-252, Transistor Polarity:Npn, Collector Emitter Voltage V(Br)Ceo:80V, Transition Frequency Ft:85Mhz, Power Dissipation Pd:20W, Dc Collector Current:8A, Dc Current Gain Hfe:60Hfe, Transistor Case Rohs Compliant: Yes |Onsemi MJD44H11-1G RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 0 |
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$0.3910 / $0.8720 | Buy Now |
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DISTI #
MJD44H11-1GOS-ND
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DigiKey | TRANS NPN 80V 8A IPAK Min Qty: 1 Lead time: 12 Weeks Container: Tube |
32 In Stock |
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$0.2584 / $1.1700 | Buy Now |
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DISTI #
MJD44H11-1G
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Avnet Americas | Bipolar (BJT) Single Transistor, NPN, 80 V, 8 A, 20 W, TO-252 (DPAK), Surface Mount - Rail/Tube (Alt: MJD44H11-1G) RoHS: Compliant Min Qty: 2550 Package Multiple: 75 Lead time: 12 Weeks, 0 Days Container: Tube | 0 |
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$0.2256 / $0.2560 | Buy Now |
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DISTI #
863-MJD44H11-1G
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Mouser Electronics | Bipolar Transistors - BJT 8A 80V 20W NPN RoHS: Compliant | 13616 |
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$0.2840 / $1.0100 | Buy Now |
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Onlinecomponents.com | Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin RoHS: Compliant |
2175 In Stock |
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$0.2730 / $0.4742 | Buy Now |
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DISTI #
84387441
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Verical | Trans GP BJT NPN 80V 8A 1750mW 3-Pin(3+Tab) IPAK Tube Min Qty: 150 Package Multiple: 75 Date Code: 2434 | Americas - 2175 |
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$0.3602 / $0.6165 | Buy Now |
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DISTI #
MJD44H11-1G
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TME | Transistor: NPN, bipolar, 80V, 8A, 20W, DPAK3 Min Qty: 1 | 0 |
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$0.3540 / $0.7160 | RFQ |
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DISTI #
MJD44H11-1G
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Avnet Asia | Bipolar (BJT) Single Transistor, NPN, 80 V, 8 A, 20 W, TO-252 (DPAK), Surface Mount (Alt: MJD44H11-1G) RoHS: Compliant Min Qty: 2625 Package Multiple: 75 Lead time: 12 Weeks, 0 Days | 13125 |
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$0.4941 / $0.6000 | Buy Now |
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DISTI #
MJD44H11-1G
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Avnet Silica | Bipolar BJT Single Transistor NPN 80 V 8 A 20 W TO252 DPAK Surface Mount (Alt: MJD44H11-1G) RoHS: Compliant Min Qty: 75 Package Multiple: 75 Lead time: 13 Weeks, 0 Days | Silica - 0 |
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Buy Now | |
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DISTI #
MJD44H11-1G
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EBV Elektronik | Bipolar BJT Single Transistor NPN 80 V 8 A 20 W TO252 DPAK Surface Mount (Alt: MJD44H11-1G) RoHS: Compliant Min Qty: 75 Package Multiple: 75 Lead time: 14 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for MJD44H11-1G
MJD44H11-1G CAD Models
MJD44H11-1G Part Data Attributes
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MJD44H11-1G
onsemi
Buy Now
Datasheet
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Compare Parts:
MJD44H11-1G
onsemi
8 A, 80 V NPN Bipolar Power Transistor, DPAK INSERTION MOUNT, 75-TUBE
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ONSEMI | |
| Part Package Code | DPAK INSERTION MOUNT | |
| Package Description | DPAK-3 | |
| Pin Count | 4 | |
| Manufacturer Package Code | 369 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 12 Weeks | |
| Samacsys Manufacturer | onsemi | |
| Case Connection | COLLECTOR | |
| Collector Current-Max (IC) | 8 A | |
| Collector-Emitter Voltage-Max | 80 V | |
| Configuration | SINGLE | |
| DC Current Gain-Min (hFE) | 40 | |
| JESD-30 Code | R-PSIP-T3 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | IN-LINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | NPN | |
| Power Dissipation-Max (Abs) | 20 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Transition Frequency-Nom (fT) | 50 MHz |
Alternate Parts for MJD44H11-1G
This table gives cross-reference parts and alternative options found for MJD44H11-1G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MJD44H11-1G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| MJD44H11-1 | Motorola Semiconductor Products | Check for Price | Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin | MJD44H11-1G vs MJD44H11-1 |
| KSH44H11ITU | onsemi | Check for Price | NPN Epitaxial Silicon Transistor, IPAK-3 / DPAK-3 STRAIGHT LEAD, 5040-TUBE | MJD44H11-1G vs KSH44H11ITU |
| MJD44H11I | Fairchild Semiconductor Corporation | Check for Price | Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, IPAK-3 | MJD44H11-1G vs MJD44H11I |
MJD44H11-1G Frequently Asked Questions (FAQ)
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A recommended PCB layout for optimal thermal performance would be to have a large copper area on the bottom layer of the PCB, connected to the drain pin of the MJD44H11-1G, and to use thermal vias to dissipate heat to the top layer. Additionally, keeping the PCB traces and components away from the device can help reduce thermal resistance.
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To ensure the MJD44H11-1G is properly biased, make sure to provide a stable voltage supply to the gate pin, and ensure the gate-source voltage (Vgs) is within the recommended range of 2-4V. Additionally, ensure the drain-source voltage (Vds) is within the recommended range of 10-30V, and the drain current (Id) is within the recommended range of 0-1A.
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When designing a power supply with the MJD44H11-1G, critical components to consider include the input capacitor, output capacitor, and inductor. The input capacitor should be selected based on the input voltage and current requirements, the output capacitor should be selected based on the output voltage and current requirements, and the inductor should be selected based on the switching frequency and current requirements.
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To protect the MJD44H11-1G from overvoltage and overcurrent conditions, consider adding overvoltage protection (OVP) and overcurrent protection (OCP) circuits to the design. OVP can be achieved using a voltage supervisor or a zener diode, while OCP can be achieved using a current sense resistor and a comparator.
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Thermal management considerations for the MJD44H11-1G include ensuring good airflow around the device, using a heat sink if necessary, and keeping the device away from other heat sources. Additionally, consider using thermal interface materials (TIMs) to improve heat transfer between the device and the heat sink.