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Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, Plastic/Epoxy, 2 Pin, DPAK-3/2
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
MJD31CQ-13 by Diodes Incorporated is a Power Bipolar Transistor.
Power Bipolar Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
29AK0900
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Newark | Trans, Npn, 100V, 3A, 150Deg C, 15W Rohs Compliant: Yes |Diodes Inc. MJD31CQ-13 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 1445 |
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$0.3480 / $0.6990 | Buy Now |
DISTI #
MJD31CQ-13DICT-ND
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DigiKey | TRANS NPN 100V 3A TO-252-3 Min Qty: 1 Lead time: 12 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
1 In Stock |
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$0.2025 / $1.0100 | Buy Now |
DISTI #
MJD31CQ-13
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Avnet Americas | Trans GP NPN 100V 3A 3-Pin TO-252 T/R - Tape and Reel (Alt: MJD31CQ-13) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 36 Weeks, 0 Days Container: Reel | 67500 |
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$0.1175 | Buy Now |
DISTI #
621-MJD31CQ-13
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Mouser Electronics | Bipolar Transistors - BJT Pwr Mid Perf Transistor RoHS: Compliant | 3913 |
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$0.2100 / $0.9600 | Buy Now |
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Future Electronics | 100 V 3 A 3MHz 15 W NPN Surface Mount Bipolar (BJT) Transistor - TO-252-3 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Lead time: 36 Weeks Container: Reel | 0Reel |
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$0.1150 / $0.1200 | Buy Now |
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Future Electronics | 100 V 3 A 3MHz 15 W NPN Surface Mount Bipolar (BJT) Transistor - TO-252-3 Min Qty: 2500 Package Multiple: 2500 |
2500 null |
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$0.1150 / $0.1200 | Buy Now |
DISTI #
MJD31CQ-13
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TME | Transistor: NPN Min Qty: 1 | 0 |
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$0.1720 / $0.6850 | RFQ |
DISTI #
MJD31CQ-13
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Avnet Asia | Trans GP NPN 100V 3A 3-Pin TO-252 T/R (Alt: MJD31CQ-13) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 8 Weeks, 0 Days | 0 |
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$0.1234 / $0.1380 | Buy Now |
DISTI #
MJD31CQ-13
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Avnet Silica | Trans GP NPN 100V 3A 3Pin TO252 TR (Alt: MJD31CQ-13) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 10 Weeks, 0 Days | Silica - 0 |
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Buy Now | |
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New Advantage Corporation | TRANS NPN 100V 3A DPAK RoHS: Compliant Min Qty: 1 Package Multiple: 2500 | 5000 |
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$0.2262 / $0.2450 | Buy Now |
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MJD31CQ-13
Diodes Incorporated
Buy Now
Datasheet
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Compare Parts:
MJD31CQ-13
Diodes Incorporated
Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, Plastic/Epoxy, 2 Pin, DPAK-3/2
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Not Recommended | |
Ihs Manufacturer | DIODES INC | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 36 Weeks | |
Samacsys Manufacturer | Diodes Incorporated | |
Additional Feature | HIGH RELIABILITY | |
Case Connection | COLLECTOR | |
Collector Current-Max (IC) | 3 A | |
Collector-Emitter Voltage-Max | 100 V | |
Configuration | SINGLE | |
DC Current Gain-Min (hFE) | 10 | |
JEDEC-95 Code | TO-252 | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | NPN | |
Reference Standard | AEC-Q101 | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON | |
Transition Frequency-Nom (fT) | 3 MHz |
The recommended PCB footprint for the MJD31CQ-13 is a standard SOT-23 package with a 1.3mm x 1.3mm pad size, 0.5mm lead pitch, and a thermal pad for heat dissipation.
To ensure reliable operation in high-temperature environments, ensure proper heat sinking, keep the junction temperature (Tj) below 150°C, and follow the recommended derating curves for power dissipation.
The MJD31CQ-13 has built-in ESD protection, but it's still recommended to follow standard ESD handling precautions during assembly and handling, such as using wrist straps, anti-static bags, and ESD-safe workstations.
Yes, the MJD31CQ-13 can be used in switching applications, but ensure the switching frequency is within the recommended range (typically up to 100 kHz), and consider the transistor's rise and fall times, as well as the power dissipation during switching.
Select resistor values based on the desired base current, collector current, and voltage drop. A general rule of thumb is to choose a base resistor that limits the base current to 1-5% of the collector current.