Part Details for MJD3055TF by onsemi
Results Overview of MJD3055TF by onsemi
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (1 replacement)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (2 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Medical Imaging
Robotics and Drones
MJD3055TF Information
MJD3055TF by onsemi is a Power Bipolar Transistor.
Power Bipolar Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for MJD3055TF
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
MJD3055TF
|
Avnet Silica | Trans GP BJT NPN 60V 10A 3Pin2Tab DPAK TR (Alt: MJD3055TF) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 143 Weeks, 0 Days | Silica - 0 |
|
Buy Now |
Part Details for MJD3055TF
MJD3055TF CAD Models
MJD3055TF Part Data Attributes
|
|
MJD3055TF
onsemi
Buy Now
Datasheet
|
Compare Parts:
MJD3055TF
onsemi
NPN Bipolar Power Transistor, 10 A, 60 V, DPAK-3, 2000-REEL
|
| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | ONSEMI | |
| Part Package Code | DPAK-3 | |
| Package Description | DPAK-3 | |
| Manufacturer Package Code | 369AK | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | onsemi | |
| Collector Current-Max (IC) | 10 A | |
| Collector-Emitter Voltage-Max | 60 V | |
| Configuration | SINGLE | |
| DC Current Gain-Min (hFE) | 5 | |
| JEDEC-95 Code | TO-252 | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | NPN | |
| Power Dissipation-Max (Abs) | 20 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | AMPLIFIER | |
| Transistor Element Material | SILICON | |
| Transition Frequency-Nom (fT) | 2 MHz |
Alternate Parts for MJD3055TF
This table gives cross-reference parts and alternative options found for MJD3055TF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MJD3055TF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| KSH3055 | Samsung Semiconductor | Check for Price | Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin, DPAK-3 | MJD3055TF vs KSH3055 |
MJD3055TF Frequently Asked Questions (FAQ)
-
A 2-layer or 4-layer PCB with a thermal relief pattern and a solid ground plane is recommended. The device should be placed near a thermal pad or a heat sink to dissipate heat efficiently.
-
Ensure proper heat sinking, use a thermal interface material, and follow the recommended PCB layout. Also, consider derating the device's power handling at high temperatures.
-
The SOA is typically defined by the device's voltage and current ratings. For the MJD3055TF, the maximum voltage is 500V and the maximum current is 30A. Operating within these limits ensures safe operation.
-
Use a transient voltage suppressor (TVS) or a metal-oxide varistor (MOV) to protect the device from voltage spikes and surges. Also, ensure proper PCB layout and decoupling to minimize electromagnetic interference (EMI).
-
A gate drive circuit with a high-current, low-impedance output is recommended. A gate resistor value between 10Ω to 100Ω is typical, and a gate voltage of 10V to 15V is recommended for optimal switching performance.